Pinhole-seeded lateral epitaxy and exfoliation of GaSb films on graphene-terminated surfaces S Manzo, PJ Strohbeen, ZH Lim, V Saraswat, D Du, S Xu, N Pokharel, ... Nature communications 13 (1), 4014, 2022 | 28 | 2022 |
Charge transfer and built-in electric fields between a crystalline oxide and silicon ZH Lim, NF Quackenbush, AN Penn, M Chrysler, M Bowden, Z Zhu, ... Physical review letters 123 (2), 026805, 2019 | 28 | 2019 |
Structural and electrical properties of single crystalline SrZrO3 epitaxially grown on Ge (001) ZH Lim, K Ahmadi-Majlan, ED Grimley, Y Du, M Bowden, R Moghadam, ... Journal of Applied Physics 122 (8), 2017 | 13 | 2017 |
Tuning metal-insulator behavior in LaTiO3/SrTiO3 heterostructures integrated directly on Si (100) through control of atomic layer thickness K Ahmadi-Majlan, T Chen, ZH Lim, P Conlin, R Hensley, M Chrysler, D Su, ... Applied Physics Letters 112 (19), 2018 | 11 | 2018 |
A multi-stop time-of-flight spectrometer for the measurement of positron annihilation-induced electrons in coincidence with the Doppler-shifted annihilation gamma photon VA Chirayath, RW Gladen, AD McDonald, AJ Fairchild, PV Joglekar, ... Review of Scientific Instruments 91 (3), 2020 | 10 | 2020 |
Suspended single-crystalline oxide structures on silicon through wet-etch techniques: Effects of oxygen vacancies and dislocations on etch rates ZH Lim, M Chrysler, A Kumar, JP Mauthe, DP Kumah, C Richardson, ... Journal of Vacuum Science & Technology A 38 (1), 2020 | 6 | 2020 |
Interfacial structure of SrZrxTi1− xO3 films on Ge T Chen, K Ahmadi-Majlan, ZH Lim, Z Zhang, JH Ngai, AF Kemper, ... Applied Physics Letters 113 (20), 2018 | 5 | 2018 |
Selective area epitaxy of GaAs films using patterned graphene on Ge ZH Lim, S Manzo, PJ Strohbeen, V Saraswat, MS Arnold, JK Kawasaki Applied Physics Letters 120 (5), 2022 | 4 | 2022 |
Evidence for a positron bound state on the surface of a topological insulator K Shastry, AH Weiss, B Barbiellini, BA Assaf, ZH Lim, PV Joglekar, ... Journal of Physics: Conference Series 618, 2015 | 3 | 2015 |
Probing the electronic properties of gap states near the surface of heterojunctions with high sensitivity SA Chambers, ZH Lim, JH Ngai, D Biswas, TL Lee Physical Review Materials 8 (1), 014602, 2024 | | 2024 |
Effect of buffer termination on intermixing and conductivity in LaTiO3/SrTiO3 heterostructures integrated on Si (100) T Chen, K Ahmadi-Majlan, ZH Lim, Z Zhang, JH Ngai, DP Kumah Journal of Vacuum Science & Technology A 40 (1), 2022 | | 2022 |
Functionalizing Semiconductor-Crystalline Oxide Heterostructures for Future Application in Energy Harvesting, Sensing, and Computing Technologies ZH Lim The University of Texas at Arlington, 2019 | | 2019 |
Direct Measurement of Band Edge Profiles at Epitaxial Oxide/Semiconductor Heterojunctions S Chambers, P Sushko, N Quackenbush, J Woicik, ZH Lim, M Chrysler, ... APS March Meeting Abstracts 2019, S46. 013, 2019 | | 2019 |
Charge Transfer and Built-in Electric Fields Between the Crystalline Oxide SrNbxTi1-xO3-δ and Silicon ZH Lim, N Quackenbush, A Penn, M Chrysler, M Bowden, Z Zhu, J Ablett, ... APS March Meeting Abstracts 2019, S46. 012, 2019 | | 2019 |
Charge transfer and tunable built-in electric fields across semiconductor-crystalline oxide interfaces ZH Lim, NF Quackenbush, A Penn, M Chrysler, M Bowden, Z Zhu, ... arXiv preprint arXiv:1810.04648, 2018 | | 2018 |
Atomic layer control of metal-insulator behavior in oxide quantum wells integrated directly on silicon K Ahmadi-Majlan, TJ Chen, ZH Lim, P Conlin, R Hensley, D Su, H Chen, ... arXiv preprint arXiv:1710.08597, 2017 | | 2017 |
Thickness dependent metal-insulator transition of a correlated oxide heterostructure integrated directly on Si K Ahmadi Majlan, T Chen, R Hensley, P Conlin, Z Hui Lim, R Moghadam, ... Bulletin of the American Physical Society 62, 2017 | | 2017 |
Positron spectroscopy of 2D materials using an advanced high intensity positron beam A McDonald, V Chirayath, Z Lim, R Gladen, M Chrysler, A Fairchild, ... APS March Meeting Abstracts 2016, C46. 003, 2016 | | 2016 |
Modeling of the energy resolution of a 1 meter and a 3 meter time of flight positron annihilation induced Auger electron spectrometers A Fairchild, V Chirayath, R Gladen, A McDonald, Z Lim, M Chrysler, ... APS March Meeting Abstracts 2016, G1. 315, 2016 | | 2016 |
Tuning electrical transport in rare-earth delta-doped SrTiO3 epitaxially grown on Si (001) K Ahmadi Majlan, M Jahangir Moghadam, X Shen, R Hensley, P Conlin, ... APS March Meeting Abstracts 2016, X47. 015, 2016 | | 2016 |