| High-efficiency GeSn/Ge multiple-quantum-well photodetectors with photon-trapping microstructures operating at 2 µm H Zhou, S Xu, Y Lin, YC Huang, B Son, Q Chen, X Guo, KH Lee, SCK Goh, ... Optics express 28 (7), 10280-10293, 2020 | 83 | 2020 |
| Bi2Te3 photoconductive detectors on Si J Liu, Y Li, Y Song, Y Ma, Q Chen, Z Zhu, P Lu, S Wang Applied Physics Letters 110 (14), 2017 | 53 | 2017 |
| Dark current analysis of germanium-on-insulator vertical pin photodetectors with varying threading dislocation density B Son, Y Lin, KH Lee, Q Chen, CS Tan Journal of Applied Physics 127 (20), 2020 | 43 | 2020 |
| Metal-semiconductor-metal GeSn photodetectors on silicon for short-wave infrared applications S Ghosh, KC Lin, CH Tsai, H Kumar, Q Chen, L Zhang, B Son, CS Tan, ... Micromachines 11 (9), 795, 2020 | 32 | 2020 |
| Resonant-cavity-enhanced responsivity in germanium-on-insulator photodetectors S Ghosh, KC Lin, CH Tsai, KH Lee, Q Chen, B Son, B Mukhopadhyay, ... Optics Express 28 (16), 23739-23747, 2020 | 28 | 2020 |
| Vibrational properties of epitaxial Bi4Te3 films as studied by Raman spectroscopy H Xu, Y Song, W Pan, Q Chen, X Wu, P Lu, Q Gong, S Wang AIP Advances 5 (8), 2015 | 24 | 2015 |
| High-Performance Back-Illuminated Ge0.92Sn0.08/Ge Multiple-Quantum-Well Photodetector on Si Platform For SWIR Detection S Wu, S Xu, H Zhou, Y Jin, Q Chen, YC Huang, L Zhang, X Gong, CS Tan IEEE Journal of Selected Topics in Quantum Electronics 28 (2: Optical …, 2021 | 22 | 2021 |
| A new route toward light emission from Ge: tensile-strained quantum dots Q Chen, Y Song, K Wang, L Yue, P Lu, Y Li, Q Gong, S Wang Nanoscale 7 (19), 8725-8730, 2015 | 22 | 2015 |
| Detailed study of the influence of InGaAs matrix on the strain reduction in the InAs dot-in-well structure P Wang, Q Chen, X Wu, C Cao, S Wang, Q Gong Nanoscale research letters 11, 1-6, 2016 | 18 | 2016 |
| Structural properties of GeSn thin films grown by molecular beam epitaxy ZP Zhang, YX Song, ZYS Zhu, Y Han, QM Chen, YY Li, LY Zhang, ... AIP Advances 7 (4), 2017 | 16 | 2017 |
| Highly tensile-strained self-assembled Ge quantum dots on InP substrates for integrated light sources Q Chen, L Zhang, Y Song, X Chen, S Koelling, Z Zhang, Y Li, ... ACS Applied Nano Materials 4 (1), 897-906, 2021 | 15 | 2021 |
| Simulation of high-efficiency resonant-cavity-enhanced GeSn single-photon avalanche photodiodes for sensing and optical quantum applications Q Chen, S Wu, L Zhang, W Fan, CS Tan IEEE Sensors Journal 21 (13), 14789-14798, 2021 | 14 | 2021 |
| Novel type II InGaAs/GaAsBi quantum well for longer wavelength emission L Yue, Y Song, X Chen, Q Chen, W Pan, X Wu, J Liu, L Zhang, J Shao, ... Journal of Alloys and Compounds 695, 753-759, 2017 | 14 | 2017 |
| Surface plasmon enhanced GeSn photodetectors operating at 2 µm H Zhou, L Zhang, J Tong, S Wu, B Son, Q Chen, DH Zhang, CS Tan Optics Express 29 (6), 8498-8509, 2021 | 12 | 2021 |
| Transferable single-layer GeSn nanomembrane resonant-cavity-enhanced photodetectors for 2 μm band optical communication and multi-spectral short-wave infrared sensing Q Chen, S Wu, L Zhang, H Zhou, W Fan, CS Tan Nanoscale 14 (19), 7341-7349, 2022 | 10 | 2022 |
| GeSn-on-insulator dual-waveband resonant-cavity-enhanced photodetectors at the 2 µm and 1.55 µm optical communication bands Q Chen, S Wu, L Zhang, D Burt, H Zhou, D Nam, W Fan, CS Tan Optics Letters 46 (15), 3809-3812, 2021 | 10 | 2021 |
| Insights into the origins of guided microtrenches and Microholes/rings from Sn segregation in germanium–tin epilayers S Wu, L Zhang, B Son, Q Chen, H Zhou, CS Tan The Journal of Physical Chemistry C 124 (37), 20035-20045, 2020 | 10 | 2020 |
| Suspended germanium membranes photodetector with tunable biaxial tensile strain and location-determined wavelength-selective photoresponsivity S Wu, H Zhou, Q Chen, L Zhang, KH Lee, S Bao, W Fan, CS Tan Applied Physics Letters 119 (19), 2021 | 9 | 2021 |
| Growth mode of tensile-strained Ge quantum dots grown by molecular beam epitaxy ZP Zhang, YX Song, QM Chen, XY Wu, ZYS Zhu, LY Zhang, YY Li, ... Journal of Physics D: Applied Physics 50 (46), 465301, 2017 | 9 | 2017 |
| Growth and characterizations of GeSn films with high Sn composition by chemical vapor deposition (CVD) using Ge2H6 and SnCl4 for mid-IR applications L Zhang, Q Chen, S Wu, BK Son, KH Lee, GY Chong, CS Tan ECS Transactions 98 (5), 91, 2020 | 8 | 2020 |
