| A CMOS-compatible electronic synapse device based on Cu/SiO2/W programmable metallization cells W Chen, R Fang, MB Balaban, W Yu, Y Gonzalez-Velo, HJ Barnaby, ... Nanotechnology 27 (25), 255202, 2016 | 80 | 2016 |
| Total-ionizing-dose effects on resistance stability of programmable metallization cell based memory and selectors W Chen, R Fang, HJ Barnaby, MB Balaban, Y Gonzalez-Velo, JL Taggart, ... IEEE Transactions on Nuclear Science 64 (1), 269-276, 2016 | 17 | 2016 |
| Fabrication and Characterization of Cu2O/Cu-WO3 Bilayers for Lateral Programmable Metallization Cells M Balaban, N Chamele, S Swain, Y Gonzalez-Velo, M Kozicki Applied Surface Science 527, 146899, 2020 | 7 | 2020 |
| Materials Characterization and Electrical Performance of Bilayer Structures for Enhanced Electrodeposition in Programmable Metallization Cells N Chamele, MB Balaban, A Patadia, SS Swain, Y Gonzalez‐Velo, ... Advanced Electronic Materials 8 (8), 2100897, 2022 | 1 | 2022 |
| Lateral programmable metallization cell devices M Kozicki, N Chamele, M Balaban US Patent App. 17/997,447, 2023 | | 2023 |
| Analysis and Modeling of Foundry Compatible Programmable Metallization Cell Materials M Balaban Arizona State University, 2020 | | 2020 |
| Effects of Cathode Materials on Thermally Annealed Cu-SiO2 CBRAM W Chen, MB Balaban, H Barnaby, M Kozicki Materials Research Society (MRS), Phoenix, AZ, USA, 2016 | | 2016 |
| Effects of Annealing Temperature on the Performance of W-SiO2-Cu PMC Devices MB Balaban, W Chen, H Barnaby, M Kozicki Materials Research Society (MRS), Phoenix, AZ, USA, 2016 | | 2016 |
Michael KozickiArizona State UniversityVerified email at asu.edu
