Follow
Griselda Bonilla
Griselda Bonilla
Verified email at us.ibm.com
Title
Cited by
Cited by
Year
Microstructural optimization of a zeolite membrane for organic vapor separation
Z Lai, G Bonilla, I Diaz, JG Nery, K Sujaoti, MA Amat, E Kokkoli, ...
Science 300 (5618), 456-460, 2003
12802003
Zeolite (MFI) crystal morphology control using organic structure-directing agents
G Bonilla, I Díaz, M Tsapatsis, HK Jeong, Y Lee, DG Vlachos
Chemistry of materials 16 (26), 5697-5705, 2004
2062004
Separation of close-boiling hydrocarbon mixtures by MFI and FAU membranes made by secondary growth
S Nair, Z Lai, V Nikolakis, G Xomeritakis, G Bonilla, M Tsapatsis
Microporous and Mesoporous Materials 48 (1-3), 219-228, 2001
1692001
Fluorescence confocal optical microscopy imaging of the grain boundary structure of zeolite MFI membranes made by secondary (seeded) growth
G Bonilla, M Tsapatsis, DG Vlachos, G Xomeritakis
Journal of Membrane Science 182 (1-2), 103-109, 2001
1492001
Simulations and experiments on the growth and microstructure of zeolite MFI films and membranes made by secondary growth
G Bonilla, DG Vlachos, M Tsapatsis
Microporous and mesoporous materials 42 (2-3), 191-203, 2001
932001
Electromigration in cu (al) and cu (mn) damascene lines
CK Hu, J Ohm, LM Gignac, CM Breslin, S Mittal, G Bonilla, D Edelstein, ...
Journal of applied physics 111 (9), 2012
712012
Zeolite membranes
M Tsapatsis, G Xomeritakis, H Hillhouse, S Nair, V Nikolakis, G Bonilla
CaTTech (Amsterdam) 3 (2), 148-163, 1999
671999
Advanced multilayer dielectric cap with improved mechanical and electrical properties
R Bhatia, G Bonilla, A Grill, JL Herman, S Van Nguyen, ET Ryan, ...
US Patent 7,737,052, 2010
622010
Ruthenium interconnect resistivity and reliability at 48 nm pitch
X Zhang, H Huang, R Patlolla, W Wang, FW Mont, J Li, CK Hu, EG Liniger, ...
2016 IEEE international interconnect technology conference/advanced …, 2016
532016
Embedded nano UV blocking and diffusion barrier for improved reliability of copper/ultra low K interlevel dielectric electronic devices
G Bonilla, CD Dimitrakopoulos, SV Nguyen, A Grill, SV Nitta, DD Restaino, ...
US Patent 7,749,892, 2010
492010
Reliability challenges for the 10nm node and beyond
JH Stathis, M Wang, RG Southwick, EY Wu, BP Linder, EG Liniger, ...
2014 IEEE International Electron Devices Meeting, 20.6. 1-20.6. 4, 2014
432014
Methods to mitigate plasma damage in organosilicate dielectrics
JC Arnold, G Bonilla, WJ Cote, G Dubois, DC Edelstein, A Grill, E Huang, ...
US Patent 8,481,423, 2013
412013
Fully aligned via integration for extendibility of interconnects to beyond the 7 nm node
BD Briggs, CB Peethala, DL Rath, J Lee, S Nguyen, NV LiCausi, ...
2017 IEEE International Electron Devices Meeting (IEDM), 14.2. 1-14.2. 4, 2017
382017
Critical ultra low-k TDDB reliability issues for advanced CMOS technologies
F Chen, M Shinosky, B Li, J Gambino, S Mongeon, P Pokrinchak, J Aitken, ...
2009 IEEE International Reliability Physics Symposium, 464-475, 2009
382009
BEOL process integration for the 7 nm technology node
T Standaert, G Beique, HC Chen, ST Chen, B Hamieh, J Lee, ...
2016 IEEE international interconnect technology conference/advanced …, 2016
372016
Interconnect structure for integrated circuits having enhanced electromigration resistance
G Bonilla, K Chanda, RG Filippi, S Grunow, CK Hu, NE Lustig, AH Simon, ...
US Patent 8,232,646, 2012
362012
Selective thin metal cap process
G Bonilla, ST Chen, ME Colburn, R Dellaguardia, CC Yang
US Patent 7,514,361, 2009
362009
Method for enabling hard mask free integration of ultra low-k materials and structures produced thereby
G Bonilla, SM Gates, S Ponoth, SV Nitta, S Purushothaman
US Patent App. 11/672,608, 2007
342007
High reliability 32 nm Cu/ULK BEOL based on PVD CuMn seed, and its extendibility
T Nogami, T Bolom, A Simon, BY Kim, CK Hu, K Tsumura, A Madan, ...
2010 International Electron Devices Meeting, 33.5. 1-33.5. 4, 2010
322010
A 45 nm CMOS node Cu/Low-k/Ultra Low-k PECVD SiCOH (k= 2.4) BEOL technology
S Sankaran, S Arai, R Augur, M Beck, G Biery, T Bolom, G Bonilla, ...
2006 International Electron Devices Meeting, 1-4, 2006
312006
The system can't perform the operation now. Try again later.
Articles 1–20