| A 7nm FinFET technology featuring EUV patterning and dual strained high mobility channels R Xie, P Montanini, K Akarvardar, N Tripathi, B Haran, S Johnson, T Hook, ... 2016 IEEE international electron devices meeting (IEDM), 2.7. 1-2.7. 4, 2016 | 175 | 2016 |
| Future on-chip interconnect metallization and electromigration CK Hu, J Kelly, H Huang, K Motoyama, H Shobha, Y Ostrovski, JHC Chen, ... 2018 ieee international reliability physics symposium (irps), 4F. 1-1-4F. 1-6, 2018 | 65 | 2018 |
| Tungsten and cobalt metallization: A material study for MOL local interconnects V Kamineni, M Raymond, S Siddiqui, F Mont, S Tsai, C Niu, A Labonte, ... 2016 IEEE International Interconnect Technology Conference/Advanced …, 2016 | 57 | 2016 |
| Experimental study of nanoscale Co damascene BEOL interconnect structures J Kelly, JHC Chen, H Huang, CK Hu, E Liniger, R Patlolla, B Peethala, ... 2016 IEEE International Interconnect Technology Conference/Advanced …, 2016 | 53 | 2016 |
| Electromigration and resistivity in on-chip Cu, Co and Ru damascene nanowires CK Hu, J Kelly, JHC Chen, H Huang, Y Ostrovski, R Patlolla, B Peethala, ... 2017 IEEE International Interconnect Technology Conference (IITC), 1-3, 2017 | 44 | 2017 |
| Nitride passivation of the interface between high-k dielectrics and SiGe K Sardashti, KT Hu, K Tang, S Madisetti, P McIntyre, S Oktyabrsky, ... Applied Physics Letters 108 (1), 2016 | 40 | 2016 |
| BEOL process integration for the 7 nm technology node T Standaert, G Beique, HC Chen, ST Chen, B Hamieh, J Lee, ... 2016 IEEE international interconnect technology conference/advanced …, 2016 | 37 | 2016 |
| Selective GeOx-scavenging from interfacial layer on Si1−xGex channel for high mobility Si/Si1−xGex CMOS application CH Lee, H Kim, P Jamison, RG Southwick, S Mochizuki, K Watanabe, ... 2016 IEEE Symposium on VLSI Technology, 1-2, 2016 | 32 | 2016 |
| Sulfur passivation for the formation of Si-terminated Al2O3/SiGe (0 0 1) interfaces K Sardashti, KT Hu, K Tang, S Park, H Kim, S Madisetti, P McIntyre, ... Applied Surface Science 366, 455-463, 2016 | 31 | 2016 |
| SiARC removal with plasma etch and fluorinated wet chemical solution combination Y Mignot, BC Peethala, S Siddiqui US Patent 9,508,560, 2016 | 24 | 2016 |
| A comparative study of strain and Ge content in Si1−xGex channel using planar FETs, FinFETs, and strained relaxed buffer layer FinFETs CH Lee, S Mochizuki, RG Southwick, J Li, X Miao, R Bao, T Ando, ... 2017 IEEE International Electron Devices Meeting (IEDM), 37.2. 1-37.2. 4, 2017 | 23 | 2017 |
| Atomic imaging and modeling of passivation, functionalization, and atomic layer deposition nucleation of the SiGe (001) surface via H2O2 (g) and trimethylaluminum dosing T Kaufman-Osborn, EA Chagarov, SW Park, B Sahu, S Siddiqui, ... Surface science 630, 273-279, 2014 | 23 | 2014 |
| IEEE International Interconnect Technology Conference J Kelly, JHC Chen, H Huang, CK Hu, E Liniger, R Patlolla, B Peethala, ... Advanced Metallization Conference (IITC/AMC)(San Jose, CA, United States of …, 2016 | 19 | 2016 |
| A study of hydrogen peroxide decomposition in ammonia-peroxide mixtures (APM) S Siddiqui, M Keswani, B Brooks, A Fuerst, S Raghavan Microelectronic engineering 102, 68-73, 2013 | 17 | 2013 |
| Hybrid source and drain contact formation using metal liner and metal insulator semiconductor contacts H Niimi, S Siddiqui, T Yamashita US Patent 10,211,094, 2019 | 16 | 2019 |
| Chamferless via structures ML Lenhardt, FW Mont, BC Peethala, S Siddiqui, JP Striss, DM Trickett US Patent 9,613,862, 2017 | 15 | 2017 |
| IEEE International Interconnect Technology Conference/Advanced Metallization Conference (IITC, AMC) V Kamineni, M Raymond, S Siddiqui, F Mont, S Tsai, C Niu, A Labonte, ... IEEE International Interconnect Technology Conference IITC, p. 105, 2016 | 12 | 2016 |
| Technology viable DC performance elements for Si/SiGe channel CMOS FinFTT G Tsutsui, R Bao, K Lim, RR Robison, RA Vega, J Yang, Z Liu, M Wang, ... 2016 IEEE International Electron Devices Meeting (IEDM), 17.4. 1-17.4. 4, 2016 | 10 | 2016 |
| Hybrid source and drain contact formation using metal liner and metal insulator semiconductor contacts H Niimi, S Siddiqui, T Yamashita US Patent 9,484,255, 2016 | 8 | 2016 |
| Chemically selective formation of Si–O–Al on SiGe (110) and (001) for ALD nucleation using H2O2 (g) SW Park, H Kim, E Chagarov, S Siddiqui, B Sahu, N Yoshida, J Kachian, ... Surface Science 652, 322-333, 2016 | 8 | 2016 |
