| An experimental and simulation study of the role of thermal effects on variability in TiN/Ti/HfO2/W resistive switching nonlinear devices D Maldonado, C Aguilera-Pedregosa, G Vinuesa, H García, S Dueñas, ... Chaos, Solitons & Fractals 160, 112247, 2022 | 13 | 2022 |
| Hafnium oxide/graphene/hafnium oxide-stacked nanostructures as resistive switching media T Kahro, A Tarre, T Kaambre, HM Piirsoo, J Kozlova, P Ritslaid, A Kasikov, ... ACS Applied Nano Materials 4 (5), 5152-5163, 2021 | 12 | 2021 |
| Influences of the Temperature on the Electrical Properties of HfO2-Based Resistive Switching Devices H García, J Boo, G Vinuesa, Ó G. Ossorio, B Sahelices, S Dueñas, ... Electronics 10 (22), 2816, 2021 | 11 | 2021 |
| Study of the set and reset transitions in HfO2-based ReRAM devices using a capacitor discharge H García, G Vinuesa, OG Ossorio, B Sahelices, H Castan, S Duenas, ... Solid-State Electronics 183, 108113, 2021 | 10 | 2021 |
| Effect of Dielectric Thickness on Resistive Switching Polarity in TiN/Ti/HfO2/Pt Stacks G Vinuesa, H García, MB González, K Kalam, M Zabala, A Tarre, K Kukli, ... Electronics 11 (3), 479, 2022 | 8 | 2022 |
| Effective control of filament efficiency by means of spacer HfAlOx layers and growth temperature in HfO2 based ReRAM devices G Vinuesa, OG Ossorio, H García, B Sahelices, H Castán, S Dueñas, ... Solid-State Electronics 183, 108085, 2021 | 7 | 2021 |
| Memory Effects in Nanolaminates of Hafnium and Iron Oxide Films Structured by Atomic Layer Deposition K Kalam, M Otsus, J Kozlova, A Tarre, A Kasikov, R Rammula, J Link, ... Nanomaterials 12 (15), 2593, 2022 | 6 | 2022 |
| Analysis of the performance of Nb2O5-doped SiO2-based MIM devices for memory and neural computation applications OG Ossorio, G Vinuesa, H García, B Sahelices, S Dueñas, H Castán, ... Solid-State Electronics 186, 108114, 2021 | 6 | 2021 |
| Structural properties, magnetism and reactivity of Ni13-xFex nanoalloys G Vinuesa, RH Aguilera-del-Toro, A Vega Journal of Magnetism and Magnetic Materials 524, 167636, 2021 | 5 | 2021 |
| Performance Assessment of Amorphous HfO2-Based RRAM Devices for Neuromorphic Applications OG Ossorio, G Vinuesa, G H., B Sahelices, D S., H Castán, E Pérez, ... ECS Journal of Solid State Science and Technology 10 (8), 083002, 2021 | 5 | 2021 |
| Effects of the voltage ramp rate on the conduction characteristics of HfO2-based resistive switching devices H García, G Vinuesa, E García-Ochoa, FL Aguirre, MB González, ... Journal of Physics D: Applied Physics 56 (36), 365108, 2023 | 4 | 2023 |
| Double Swing Quiescent-Current: An Experimental Detection Method of Ferroelectricity in Very Leaky Dielectric Films S Dueñas, H Castán, ÓG Ossorio, G Vinuesa, H García, K Kukli, ... ECS Transactions 97 (1), 3, 2020 | 4 | 2020 |
| Single and complex devices on three topological configurations of HfO2 based RRAM ÓG Ossorio, S Poblador, G Vinuesa, S Dueñas, H Castán, ... 2020 IEEE Latin America Electron Devices Conference (LAEDC), 1-4, 2020 | 4 | 2020 |
| Atomic layer deposited nanolaminates of zirconium oxide and manganese oxide from manganese (III) acetylacetonate and ozone K Kalam, R Rammula, P Ritslaid, T Käämbre, J Link, R Stern, G Vinuesa, ... Nanotechnology 32 (33), 335703, 2021 | 3 | 2021 |
| Structure and Electrical Behavior of Hafnium-Praseodymium Oxide Thin Films Grown by Atomic Layer Deposition K Kukli, L Aarik, G Vinuesa, S Dueñas, H Castán, H García, A Kasikov, ... Materials 15 (3), 877, 2022 | 2 | 2022 |
| Variability and power enhancement of current controlled resistive switching devices G Vinuesa, H García, JM Lendínez, E García-Ochoa, MB González, ... Microelectronic Engineering 276, 112008, 2023 | 1 | 2023 |
| Inhomogeneous HfO layer growth at atomic layer deposition A Kasikov, A Tarre, G Vinuesa Journal of Electrical Engineering 74 (4), 246-255, 2023 | 1 | 2023 |
| Thermal effects on TiN/Ti/HfO2/Pt memristors charge conduction F Jiménez-Molinos, G Vinuesa, H García, A Tarre, A Tamm, K Kalam, ... Journal of Applied Physics 132 (19), 2022 | 1 | 2022 |
| Off-chip prefetching based on Hidden Markov Model for non-volatile memory architectures A Lamela, ÓG Ossorio, G Vinuesa, B Sahelices PloS one 16 (9), e0257047, 2021 | 1 | 2021 |
| Semiempirical Memdiode Model for Resistive Switching Devices in Dynamic Regimes CSC González, B Sahelices, J Jiménez, OG Ossorio, H Castán, ... 2021 13th Spanish Conference on Electron Devices (CDE), 74-77, 2021 | 1 | 2021 |
SALVADOR DUEÑASProfessor, University of ValladolidVerified email at uva.es
