| Design and modeling of niobium oxide-tantalum oxide based self-selective memristor for large-scale crossbar memory AK Parit, MS Yadav, AK Gupta, A Mikhaylov, B Rawat Chaos, Solitons & Fractals 145, 110818, 2021 | 18 | 2021 |
| Performance projection of 2-D material-based CMOS inverters for sub-10-nm channel length A Rawat, AK Gupta, B Rawat IEEE Transactions on Electron Devices 68 (7), 3622-3629, 2021 | 10 | 2021 |
| Device-circuit co-design of memristor-based on niobium oxide for large-scale crossbar memory AK Gupta, MS Yadav, B Rawat Memories - Materials, Devices, Circuits and Systems 5 (https://doi.org/10 …, 2023 | | 2023 |
| “How Good Silicon Oxide-based Memristor Can be? MS Yadav, AK Gupta, V Kanupriya, B Rawat 35th IEEE International Conference on VLSI Design, 2022 | | 2022 |
| Role of Resistive Layer in Threshold Memory Switching Memristor Device Avinash Kumar Gupta*, M. S. Yadav* (*Equal Contribution), Brajesh Rawat 4th International Conference on Memristive Materials, Devices and Systems …, 2021 | | 2021 |
| Single and Multilayer Black Phosphorous-based CMOS Inverter for Deep Sub-10 nm Technology A Rawat, AK Gupta, B Rawat 20th International Workshop on Physics of Semiconductor Devices, 2019 | | 2019 |
Brajesh RawatAssistant Professor, Indian Institute of Technology Ropar, Rupnagar-140001, Punjab, IndiaVerified email at iitrpr.ac.in
