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Miguel Montes Bajo
Miguel Montes Bajo
Lecturer (Prof. Contratado Doctor) at Universidad Politécnica Madrid
Verified email at upm.es
Title
Cited by
Cited by
Year
Terahertz oscillations in an In0. 53Ga0. 47As submicron planar Gunn diode
A Khalid, GM Dunn, RF Macpherson, S Thoms, D Macintyre, C Li, ...
Journal of Applied Physics 115 (11), 2014
882014
Circumventing UV Light Induced Nanomorphology Disorder to Achieve Long Lifetime PTB7‐Th: PCBM Based Solar Cells
Q Liu, J Toudert, F Liu, P Mantilla‐Perez, MM Bajo, TP Russell, J Martorell
Advanced Energy Materials 7 (21), 1701201, 2017
852017
On the link between electroluminescence, gate current leakage, and surface defects in AlGaN/GaN high electron mobility transistors upon off-state stress
M Montes Bajo, C Hodges, MJ Uren, M Kuball
Applied Physics Letters 101 (3), 2012
762012
Thermal Properties of AlGaN/GaN HFETs on Bulk GaN Substrates
N Killat, M Montes, JW Pomeroy, T Paskova, KR Evans, J Leach, X Li, ...
Electron Device Letters, IEEE 33 (3), 366-368, 2012
752012
In0.53Ga0.47As Planar Gunn Diodes Operating at a Fundamental Frequency of 164 GHz
A Khalid, C Li, V Papageogiou, GM Dunn, MJ Steer, IG Thayne, M Kuball, ...
IEEE Electron Device Letters 34 (1), 39-41, 2013
69*2013
Homoepitaxy of non-polar ZnO/(Zn,Mg)O multi-quantum wells: From a precise growth control to the observation of intersubband transitions
NL Biavan, M Hugues, MM Bajo, J Tamayo-Arriola, A Jollivet, D Lefebvre, ...
Applied Physics Letters 111, 231903, 2017
402017
Improving the performance of a neodymium aluminium borate microchip laser crystal by resonant pumping
ZD Luo, YD Huang, M Montes, D Jaque
Applied physics letters 85 (5), 715-717, 2004
342004
An extremely thin and robust interconnecting layer providing 76% fill factor in a tandem polymer solar cell architecture
A Martínez-Otero, Q Liu, P Mantilla-Perez, MM Bajo, J Martorell
Journal of Materials Chemistry A 3 (20), 10681-10686, 2015
312015
Thermal hysteresis in the luminescence of ions in
MO Ramirez, D Jaque, M Montes, J Garcıa Solé, LE Bausá, L Ivleva
Applied physics letters 84 (15), 2787-2789, 2004
312004
Time evolution of off-state degradation of AlGaN/GaN high electron mobility transistors
MM Bajo, H Sun, MJ Uren, M Kuball
Applied Physics Letters 104 (22), 2014
302014
Short-pulse generation from a resonantly pumped NdAl3(BO3)4 microchip laser
M Montes, D Jaque, L Zundu, H Yidong
Optics letters 30 (4), 397-399, 2005
292005
Short infrared wavelength quantum cascade detectors based on m-plane ZnO/ZnMgO quantum wells
A Jollivet, B Hinkov, S Pirotta, H Hoang, S Derelle, J Jaeck, ...
Applied Physics Letters 113 (25), 2018
282018
Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges
N Killat, M Montes Bajo, T Paskova, KR Evans, J Leach, X Li, Ü Özgür, ...
Applied Physics Letters 103 (19), 2013
282013
Independent tuning of electron and hole confinement in InAs/GaAs quantum dots through a thin GaAsSbN capping layer
JM Ulloa, DF Reyes, M Montes, K Yamamoto, DL Sales, D Gonzalez, ...
Applied Physics Letters 100 (1), 2012
272012
Multisubband Plasmons in Doped Quantum Wells
MM Bajo, J Tamayo-Arriola, M Hugues, JM Ulloa, N Le Biavan, R Peretti, ...
Physical Review Applied 10 (2), 024005, 2018
232018
Passive Q-switching of a diode pumped Nd3+: CGGG crystal: Benefits of inhomogeneous line broadening and short pulse generation
M Montes, C de las Heras, D Jaque
Optical Materials 28 (4), 408-414, 2006
222006
Terahertz intersubband electroluminescence from nonpolar m-plane ZnO quantum cascade structures
B Meng, B Hinkov, NML Biavan, HT Hoang, D Lefebvre, M Hugues, ...
ACS photonics 8 (1), 343-349, 2020
212020
Optical phase transition in semiconductor quantum metamaterials
A Hierro, MM Bajo, M Ferraro, J Tamayo-Arriola, N Le Biavan, M Hugues, ...
Physical Review Letters 123 (11), 117401, 2019
202019
Reduction of impact ionization in GaAs-based planar Gunn diodes by anode contact design
M Montes, G Dunn, A Stephen, A Khalid, C Li, D Cumming, CH Oxley, ...
IEEE transactions on electron devices 59 (3), 654-660, 2011
202011
Impact of N on the lasing characteristics of GaInNAs∕ GaAs quantum well lasers emitting from 1.29 to 1.52 μm
JM Ulloa, A Hierro, M Montes, B Damilano, M Hugues, J Barjon, JY Duboz, ...
Applied Physics Letters 87 (25), 2005
202005
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