| High carrier mobility of Sn-doped polycrystalline-Ge films on insulators by thickness-dependent low-temperature solid-phase crystallization T Sadoh, Y Kai, R Matsumura, K Moto, M Miyao Applied Physics Letters 109 (23), 2016 | 55 | 2016 |
| Single-crystalline laterally graded GeSn on insulator structures by segregation controlled rapid-melting growth M Kurosawa, Y Tojo, R Matsumura, T Sadoh, M Miyao Applied Physics Letters 101 (9), 2012 | 41 | 2012 |
| Growth-rate-dependent laterally graded SiGe profiles on insulator by cooling-rate controlled rapid-melting-growth R Matsumura, Y Tojo, M Kurosawa, T Sadoh, I Mizushima, M Miyao Applied Physics Letters 101 (24), 2012 | 35 | 2012 |
| Ultra-high-speed lateral solid phase crystallization of GeSn on insulator combined with Sn-melting-induced seeding H Chikita, R Matsumura, Y Kai, T Sadoh, M Miyao Applied Physics Letters 105 (20), 2014 | 34 | 2014 |
| Au–Sn Catalyzed Growth of Ge1–xSnx Nanowires: Growth Direction, Crystallinity, and Sn Incorporation YL Sun, R Matsumura, W Jevasuwan, N Fukata Nano Letters 19 (9), 6270-6277, 2019 | 22 | 2019 |
| High-quality formation of multiply stacked SiGe-on-insulator structures by temperature-modulated successive rapid-melting-growth Y Tojo, R Matsumura, H Yokoyama, M Kurosawa, K Toko, T Sadoh, ... Applied Physics Letters 102 (9), 2013 | 22 | 2013 |
| Pulse number controlled laser annealing for GeSn on insulator structure with high substitutional Sn concentration K Moto, R Matsumura, T Sadoh, H Ikenoue, M Miyao Applied Physics Letters 108 (26), 2016 | 20 | 2016 |
| Low-temperature (∼ 180° C) position-controlled lateral solid-phase crystallization of GeSn with laser-anneal seeding R Matsumura, H Chikita, Y Kai, T Sadoh, H Ikenoue, M Miyao Applied Physics Letters 107 (26), 2015 | 19 | 2015 |
| Ge p-channel tunneling FETs with steep phosphorus profile source junctions R Takaguchi, R Matsumura, T Katoh, M Takenaka, S Takagi Japanese Journal of Applied Physics 57 (4S), 04FD10, 2018 | 15 | 2018 |
| Crystallization of electrodeposited germanium thin film on silicon (100) MSZ Abidin, R Matsumura, M Anisuzzaman, JH Park, S Muta, ... Materials 6 (11), 5047-5057, 2013 | 12 | 2013 |
| Self-organized< 1 0 0> direction growth of germanium film on insulator obtained by high speed continuous wave laser annealing R Matsumura, N Fukata Materials Letters 288, 129328, 2021 | 11 | 2021 |
| Large-grain SiGe-on-insulator with uniform Si concentration by segregation-free rapid-melting growth R Matsumura, R Kato, T Sadoh, M Miyao Applied Physics Letters 105 (10), 2014 | 10 | 2014 |
| Ge-on-insulator tunneling FET with abrupt source junction formed by utilizing snowplow effect of NiGe R Matsumura, T Katoh, R Takaguchi, M Takenaka, S Takagi Japanese Journal of Applied Physics 57 (4S), 04FD05, 2018 | 9 | 2018 |
| Single grain growth of Si thin film on insulating substrate by limited region aluminum induced crystallization R Matsumura, Y Wang, W Jevasuwan, N Fukata Materials Letters 252, 100-102, 2019 | 8 | 2019 |
| Performance enhancement of Ge-on-Insulator tunneling FETs with source junctions formed by low-energy BF2 ion implantation T Katoh, R Matsumura, R Takaguchi, M Takenaka, S Takagi Japanese Journal of Applied Physics 57 (4S), 04FD15, 2018 | 8 | 2018 |
| Growth of tensile strained poly germanium thin film on glass substrates by high speed continuous wave laser annealing, and its application to germanium-tin R Matsumura, N Fukata ECS Journal of Solid State Science and Technology 9 (6), 063002, 2020 | 7 | 2020 |
| Ultrathin-Body Ge-on-Insulator Mosfet and TFET Technologies S Takagi, WK Kim, KW Jo, R Matsumura, R Takaguchi, T Katoh, TE Bae, ... ECS Transactions 86 (7), 75, 2018 | 7 | 2018 |
| Thickness dependent solid-phase crystallization of amorphous GeSn on insulating substrates at low temperatures (≤ 250° C) R Matsumura, M Sasaki, H Chikita, T Sadoh, M Miyao ECS Solid State Letters 4 (12), P95, 2015 | 7 | 2015 |
| The Effects of Annealing Temperatures on Composition and Strain in SixGe1−x Obtained by Melting Growth of Electrodeposited Ge on Si (100) MSZ Abidin, T Morshed, H Chikita, Y Kinoshita, S Muta, M Anisuzzaman, ... Materials 7 (2), 1409-1421, 2014 | 7 | 2014 |
| Fe-induced layer exchange of multilayer graphene for rechargeable battery anodes Y Nakajima, H Murata, Y Kado, R Matsumura, N Fukata, T Suemasu, ... Applied physics express 13 (2), 025501, 2020 | 6 | 2020 |
