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Ran He (赫 然)
Ran He (赫 然)
Ph.D., E-mail: ran.he@ieee.org
Verified email at ieee.org - Homepage
Title
Cited by
Cited by
Year
Room temperature GaN-diamond bonding for high-power GaN-on-diamond devices
F Mu, R He, T Suga
Scripta Materialia 150, 148-151, 2018
1062018
Combined surface activated bonding technique for low-temperature Cu/dielectric hybrid bonding
R He, M Fujino, A Yamauchi, Y Wang, T Suga
ECS Journal of Solid State Science and Technology 5 (7), P419, 2016
482016
A comparison study: Direct wafer bonding of SiC–SiC by standard surface-activated bonding and modified surface-activated bonding with Si-containing Ar ion beam
F Mu, K Iguchi, H Nakazawa, Y Takahashi, M Fujino, R He, T Suga
Applied Physics Express 9 (8), 081302, 2016
422016
Sequential plasma activation methods for hydrophilic direct bonding at sub-200° C
R He, A Yamauchi, T Suga
Japanese Journal of Applied Physics 57 (2S1), 02BD03, 2018
262018
Direct wafer bonding of GaN-SiC for high power GaN-on-SiC devices
Fengwen Mu, Yinghui Wang, Ran He, Tadatomo Suga
Materialia, 2018
252018
Combined surface activated bonding using H-containing HCOOH vapor treatment for Cu/Adhesive hybrid bonding at below 200° C
R He, M Fujino, M Akaike, T Sakai, S Sakuyama, T Suga
Applied Surface Science 414, 163-170, 2017
172017
Combined surface-activated bonding technique for low-temperature hydrophilic direct wafer bonding
R He, M Fujino, A Yamauchi, T Suga
Japanese Journal of Applied Physics 55 (4S), 04EC02, 2016
162016
Novel hydrophilic SiO2 wafer bonding using combined surface-activated bonding technique
R He, M Fujino, A Yamauchi, T Suga
Japanese Journal of Applied Physics 54 (3), 030218, 2015
132015
Nonlinear thermo-mechanical analysis of TSV interposer filling with solder, Cu and Cu-cored solder
R He, H Wang, J Zhou, X Guo, D Yu, L Wan
Electronic Packaging Technology and High Density Packaging (ICEPT-HDP), 2011 …, 2011
132011
Room temperature SiC-SiO2 wafer bonding enhanced by using an intermediate Si nano layer
F Mu, K Iguchi, H Nakazawa, Y Takahashi, R He, M Fujino, T Suga
ECS Journal of Solid State Science and Technology 6 (5), P227, 2017
122017
Effects of Ar plasma and Ar fast atom bombardment (FAB) treatments on Cu/polymer hybrid surface for wafer bonding
R He, T Suga
2014 International Conference on Electronics Packaging (ICEP), 78-81, 2014
122014
Combined Surface Activated Bonding Technique for Hydrophilic SiO2-SiO2 and Cu-Cu Bonding
R He
PRiME 2016/230th ECS Meeting (October 2-7, 2016), 2016
102016
The development of low cost Through Glass Via (TGV) interposer using additive method for via filling
Y Sun, D Yu, R He, F Dai, X Sun, L Wan
2012 13th International Conference on Electronic Packaging Technology & High …, 2012
102012
Cu/adhesive hybrid bonding at 180 C in H-Containing HCOOH vapor ambient for 2.5 D/3D integration
R He, M Fujino, M Akaike, T Sakai, S Sakuyama, T Suga
2017 IEEE 67th Electronic Components and Technology Conference (ECTC), 1243-1248, 2017
82017
High-speed through-silicon via filling method using Cu-cored solder balls
R He, H Wang, D Yu, J Zhou, F Dai, C Song, Y Sun, L Wan
Journal of Semiconductors 33 (8), 086002, 2012
62012
Direct cu to cu bonding and alternative bonding techniques in 3d packaging
T Suga, R He, G Vakanas, A La Manna
3D Microelectronic Packaging: From Architectures to Applications, 201-231, 2021
52021
Nonlinear thermal stress & strain analysis of through silicon vias with different structures and polymer filling
J Zhou, D Yu, R He, F WeiDai, X Guo, C Song, HJ Wang, D Guidotti, ...
2011 IEEE 13th Electronics Packaging Technology Conference, 686-690, 2011
52011
Three-dimensional PN junction capacitor for passive integration
H Wang, L Wan, D Yu, D Guidotti, R He, F Dai, L Cao, X Zhang, N Zhao, ...
Applied Physics Letters 99 (5), 052104-052104-3, 2011
52011
Cu/adhesive hybrid bonding through a Cu-first bonding approach by using H-containing HCOOH vapor surface treatment
R He, M Fujino, M Akaike, T Suga, T Sakai, S Sakuyama
2017 18th International Conference on Electronic Packaging Technology (ICEPT …, 2017
32017
Combined Surface-Activated Bonding Technique for Low-Temperature Cu/SiO2 Hybrid Bonding
R He, M Fujino, A Yamauchi, T Suga
ECS Transactions 69 (6), 79, 2015
32015
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Articles 1–20