Room temperature GaN-diamond bonding for high-power GaN-on-diamond devices F Mu, R He, T Suga Scripta Materialia 150, 148-151, 2018 | 106 | 2018 |
Combined surface activated bonding technique for low-temperature Cu/dielectric hybrid bonding R He, M Fujino, A Yamauchi, Y Wang, T Suga ECS Journal of Solid State Science and Technology 5 (7), P419, 2016 | 48 | 2016 |
A comparison study: Direct wafer bonding of SiC–SiC by standard surface-activated bonding and modified surface-activated bonding with Si-containing Ar ion beam F Mu, K Iguchi, H Nakazawa, Y Takahashi, M Fujino, R He, T Suga Applied Physics Express 9 (8), 081302, 2016 | 42 | 2016 |
Sequential plasma activation methods for hydrophilic direct bonding at sub-200° C R He, A Yamauchi, T Suga Japanese Journal of Applied Physics 57 (2S1), 02BD03, 2018 | 26 | 2018 |
Direct wafer bonding of GaN-SiC for high power GaN-on-SiC devices Fengwen Mu, Yinghui Wang, Ran He, Tadatomo Suga Materialia, 2018 | 25 | 2018 |
Combined surface activated bonding using H-containing HCOOH vapor treatment for Cu/Adhesive hybrid bonding at below 200° C R He, M Fujino, M Akaike, T Sakai, S Sakuyama, T Suga Applied Surface Science 414, 163-170, 2017 | 17 | 2017 |
Combined surface-activated bonding technique for low-temperature hydrophilic direct wafer bonding R He, M Fujino, A Yamauchi, T Suga Japanese Journal of Applied Physics 55 (4S), 04EC02, 2016 | 16 | 2016 |
Novel hydrophilic SiO2 wafer bonding using combined surface-activated bonding technique R He, M Fujino, A Yamauchi, T Suga Japanese Journal of Applied Physics 54 (3), 030218, 2015 | 13 | 2015 |
Nonlinear thermo-mechanical analysis of TSV interposer filling with solder, Cu and Cu-cored solder R He, H Wang, J Zhou, X Guo, D Yu, L Wan Electronic Packaging Technology and High Density Packaging (ICEPT-HDP), 2011 …, 2011 | 13 | 2011 |
Room temperature SiC-SiO2 wafer bonding enhanced by using an intermediate Si nano layer F Mu, K Iguchi, H Nakazawa, Y Takahashi, R He, M Fujino, T Suga ECS Journal of Solid State Science and Technology 6 (5), P227, 2017 | 12 | 2017 |
Effects of Ar plasma and Ar fast atom bombardment (FAB) treatments on Cu/polymer hybrid surface for wafer bonding R He, T Suga 2014 International Conference on Electronics Packaging (ICEP), 78-81, 2014 | 12 | 2014 |
Combined Surface Activated Bonding Technique for Hydrophilic SiO2-SiO2 and Cu-Cu Bonding R He PRiME 2016/230th ECS Meeting (October 2-7, 2016), 2016 | 10 | 2016 |
The development of low cost Through Glass Via (TGV) interposer using additive method for via filling Y Sun, D Yu, R He, F Dai, X Sun, L Wan 2012 13th International Conference on Electronic Packaging Technology & High …, 2012 | 10 | 2012 |
Cu/adhesive hybrid bonding at 180 C in H-Containing HCOOH vapor ambient for 2.5 D/3D integration R He, M Fujino, M Akaike, T Sakai, S Sakuyama, T Suga 2017 IEEE 67th Electronic Components and Technology Conference (ECTC), 1243-1248, 2017 | 8 | 2017 |
High-speed through-silicon via filling method using Cu-cored solder balls R He, H Wang, D Yu, J Zhou, F Dai, C Song, Y Sun, L Wan Journal of Semiconductors 33 (8), 086002, 2012 | 6 | 2012 |
Direct cu to cu bonding and alternative bonding techniques in 3d packaging T Suga, R He, G Vakanas, A La Manna 3D Microelectronic Packaging: From Architectures to Applications, 201-231, 2021 | 5 | 2021 |
Nonlinear thermal stress & strain analysis of through silicon vias with different structures and polymer filling J Zhou, D Yu, R He, F WeiDai, X Guo, C Song, HJ Wang, D Guidotti, ... 2011 IEEE 13th Electronics Packaging Technology Conference, 686-690, 2011 | 5 | 2011 |
Three-dimensional PN junction capacitor for passive integration H Wang, L Wan, D Yu, D Guidotti, R He, F Dai, L Cao, X Zhang, N Zhao, ... Applied Physics Letters 99 (5), 052104-052104-3, 2011 | 5 | 2011 |
Cu/adhesive hybrid bonding through a Cu-first bonding approach by using H-containing HCOOH vapor surface treatment R He, M Fujino, M Akaike, T Suga, T Sakai, S Sakuyama 2017 18th International Conference on Electronic Packaging Technology (ICEPT …, 2017 | 3 | 2017 |
Combined Surface-Activated Bonding Technique for Low-Temperature Cu/SiO2 Hybrid Bonding R He, M Fujino, A Yamauchi, T Suga ECS Transactions 69 (6), 79, 2015 | 3 | 2015 |