| Optical properties and structure of HfO2 thin films grown by high pressure reactive sputtering FL Martínez, M Toledano-Luque, JJ Gandía, J Cárabe, W Bohne, ... Journal of Physics D: Applied Physics 40 (17), 5256, 2007 | 230 | 2007 |
| Lifetime recovery in ultrahighly titanium-doped silicon for the implementation of an intermediate band material E Antolín, A Martí, J Olea, D Pastor, G González-Díaz, I Mártil, A Luque Applied Physics Letters 94 (4), 2009 | 171 | 2009 |
| Optical-constant calculation of non-uniform thickness thin films of the Ge10As15Se75 chalcogenide glassy alloy in the sub-band-gap region (0.1–1.8 eV) E Marquez, AM Bernal-Oliva, JM Gonzalez-Leal, R Prieto-Alcon, ... Materials chemistry and physics 60 (3), 231-239, 1999 | 104 | 1999 |
| Titanium doped silicon layers with very high concentration J Olea, M Toledano-Luque, D Pastor, G González-Díaz, I Mártil Journal of Applied Physics 104 (1), 2008 | 103 | 2008 |
| A comparative study of the electrical properties of TiO2 films grown by high-pressure reactive sputtering and atomic layer deposition S Duenas, H Castán, H García, E San Andrés, M Toledano-Luque, I Mártil, ... Semiconductor science and technology 20 (10), 1044, 2005 | 102 | 2005 |
| Rapid thermal annealing effects on the structural properties and density of defects in and films deposited by electron cyclotron resonance E San Andrés, A Del Prado, FL Martınez, I Mártil, D Bravo, FJ López Journal of Applied Physics 87 (3), 1187-1192, 2000 | 102 | 2000 |
| Influence of defects on the electrical and optical characteristics of blue light-emitting diodes based on III–V nitrides I Martil, E Redondo, A Ojeda Journal of applied physics 81 (5), 2442-2444, 1997 | 101 | 1997 |
| Capacitance measurements of pn junctions: depletion layer and diffusion capacitance contributions ML Lucia, JL Hernandez-Rojas, C Leon, I Mártil European journal of physics 14 (2), 86, 1993 | 86 | 1993 |
| Sub-bandgap absorption in Ti implanted Si over the Mott limit J Olea, A Del Prado, D Pastor, I Mártil, G González-Díaz Journal of Applied Physics 109 (11), 2011 | 77 | 2011 |
| High quality Ti-implanted Si layers above the Mott limit J Olea, M Toledano-Luque, D Pastor, E San-Andrés, I Mártil, ... Journal of Applied Physics 107 (10), 2010 | 72 | 2010 |
| Room-temperature operation of a titanium supersaturated silicon-based infrared photodetector E García Hemme, R García Hernansanz, G González Díaz, J Olea Ariza, ... American Institute of Physics, 2014 | 65 | 2014 |
| Deposition of thin films by the electron cyclotron resonance and its application to structures S Garcia, I Martil, G Gonzalez Diaz, E Castan, S Duenas, M Fernandez Journal of Applied Physics 83 (1), 332-338, 1998 | 65 | 1998 |
| Physical properties of high pressure reactively sputtered TiO2 ES Andrés, M Toledano-Luque, A Prado, MA Navacerrada, I Mártil, ... Journal of Vacuum Science & Technology A 23 (6), 1523-1530, 2005 | 64 | 2005 |
| Optical analysis of absorbing thin films: application to ternary chalcopyrite semiconductors JL Hernandez-Rojas, ML Lucia, I Mártil, G González-Díaz, J Santamaria, ... Applied optics 31 (10), 1606-1611, 1992 | 64 | 1992 |
| Intermediate band mobility in heavily titanium-doped silicon layers G González Díaz, J Olea Ariza Elsevier Science BV, 2009 | 63 | 2009 |
| Influence of rapid thermal annealing processes on the properties of SiNx: H films deposited by the electron cyclotron resonance method FL Martınez, I Mártil, G González-Dıaz, B Selle, I Sieber Journal of non-crystalline solids 227, 523-527, 1998 | 59 | 1998 |
| Two-layer Hall effect model for intermediate band Ti-implanted silicon J Olea, G González-Díaz, D Pastor, I Mártil, A Martí, E Antolín, A Luque Journal of Applied Physics 109 (6), 2011 | 58 | 2011 |
| Isotopic study of the nitrogen-related modes in N+-implanted ZnO L Artús, R Cuscó, E Alarcón-Lladó, G Gonzalez-Diaz, I Mártil, J Jiménez, ... Applied physics letters 90 (18), 2007 | 58 | 2007 |
| Composition and optical properties of silicon oxynitride films deposited by electron cyclotron resonance A Del Prado, E San Andrés, FL Martınez, I Mártil, G González-Dı́az, ... Vacuum 67 (3-4), 507-512, 2002 | 58 | 2002 |
| Molecular models and activation energies for bonding rearrangement in plasma-deposited dielectric thin films treated by rapid thermal annealing FL Martinez, A Del Prado, I Mártil, G González-Diaz, W Bohne, W Fuhs, ... Physical Review B 63 (24), 245320, 2001 | 57 | 2001 |
Felix L. Martinez-VivienteUniversidad Politecnica de CartagenaVerified email at upct.es
