AlGaAs/GaAs double barrier diodes with high peak‐to‐valley current ratio CI Huang, MJ Paulus, CA Bozada, SC Dudley, KR Evans, CE Stutz, ... Applied physics letters 51 (2), 121-123, 1987 | 169 | 1987 |
Quantum inductance within linear response theory Y Fu, SC Dudley Physical review letters 70 (1), 65, 1993 | 111 | 1993 |
Role of kinetics and thermodynamics in alloy clustering and surface quality in InAlAs grown by molecular‐beam epitaxy: Consequences for optical and transport properties J Singh, S Dudley, B Davies, KK Bajaj Journal of applied physics 60 (9), 3167-3171, 1986 | 67 | 1986 |
A study of novel growth approaches to influence the growth mechanism and interface quality in heterostructures grown by molecular beam epitaxy J Singh, S Dudley, KK Bajaj Journal of Vacuum Science & Technology B: Microelectronics Processing and …, 1986 | 32 | 1986 |
Theory of the effect of magnetic field on the excitonic photoluminescence linewidth in semiconductor alloys RA Mena, GD Sanders, KK Bajaj, SC Dudley Journal of applied physics 70 (3), 1866-1868, 1991 | 31 | 1991 |
Locating a smartphone's accelerometer S Mau, F Insulla, EE Pickens, Z Ding, SC Dudley The Physics Teacher 54 (4), 246-247, 2016 | 21 | 2016 |
Fu and Dudley reply Y Fu, SC Dudley Physical Review Letters 71 (3), 466, 1993 | 15 | 1993 |
Magnetohydrodynamic propulsion for the classroom GI Font, SC Dudley The Physics Teacher 42, 410, 2004 | 12 | 2004 |
The Poynting vector and power in a simple circuit S Majcen, RK Haaland, SC Dudley American Journal of Physics 68 (9), 857-859, 2000 | 11 | 2000 |
Parametric study of AlAs/GaAs superlattice double‐barrier diodes MJ Paulus, CA Bozada, CI Huang, SC Dudley, KR Evans, CE Stutz, ... Applied physics letters 53 (3), 207-209, 1988 | 11 | 1988 |
Method and system for automated measurement of whole-wafer etch pit density in GaAs DC Look, JS Sewell, MG Mier, JR Sizelove, DC Walters, SC Dudley US Patent 5,008,542, 1991 | 10 | 1991 |
STUTZ, c. E., JONES, RL, and CHENEY, ME:'AlGaAs/GaAs double barrier diodes with high peak-to-valley current ratio' CI Huang, MJ Paulus, CA Bozada, SC Dudley, KR Evans Appl. Phys. Lett 51, 121-123, 1987 | 9 | 1987 |
Projectile Motion in Special Relativity. CJ Naddy, SC Dudley, RK Haaland Physics Teacher 38 (1), 27-29, 2000 | 7 | 2000 |
Asymmetric interface roughness in semiconductors grown by molecular‐beam epitaxy S Dudley, J Singh, KK Bajaj Journal of Vacuum Science & Technology B: Microelectronics Processing and …, 1987 | 7 | 1987 |
Theoretical studies of alloy clustering and interface roughness in InAs, GaAs, and AlAs based heterostructures grown by molecular beam epitaxy J Singh, B Davies, S Dudley, KK Bajaj Journal of Vacuum Science & Technology B: Microelectronics Processing and …, 1986 | 6 | 1986 |
How to quickly estimate the focal length of a diverging lens SC Dudley The Physics Teacher 37 (2), 94-94, 1999 | 5 | 1999 |
A new technique for whole‐wafer etch‐pit density mapping in GaAs DC Look, DC Walters, JS Sewell, SC Dudley, MG Mier, JS Sizelove Journal of applied physics 65 (3), 1375-1377, 1989 | 4 | 1989 |
Formation of misfit and threading dislocations in molecular‐beam epitaxy grown strained layer epitaxy: Role of growth modes J Singh, KK Bajaj, S Dudley Journal of Vacuum Science & Technology B: Microelectronics Processing and …, 1987 | 4 | 1987 |
Automated and calibrated whole wafer etch pit density measurements in GaAs JS Sewell, SC Dudley, MG Mier, DC Look, DC Walters Journal of electronic materials 18, 191-197, 1989 | 3 | 1989 |
Spaceship with a thruster—one body, one force SC Dudley, MA Serna American journal of physics 73, 500, 2005 | 2 | 2005 |