Ferroelectric switching in bilayer 3R MoS2 via interlayer shear mode driven by nonlinear phononics J Park, IW Yeu, G Han, CS Hwang, JH Choi Scientific reports 9 (1), 14919, 2019 | 25 | 2019 |
Reduction of the Hysteresis Voltage in Atomic‐Layer‐Deposited p‐Type SnO Thin‐Film Transistors by Adopting an Al2O3 Interfacial Layer Y Jang*, IW Yeu*, JS Kim, JH Han, JH Choi, CS Hwang Advanced Electronic Materials 5 (7), 1900371, 2019 | 25 | 2019 |
Resistance switching behavior of atomic layer deposited SrTiO3 film through possible formation of Sr2Ti6O13 or Sr1Ti11O20 phases W Lee, S Yoo, KJ Yoon, IW Yeu, HJ Chang, JH Choi, S Hoffmann-Eifert, ... Scientific reports 6 (1), 20550, 2016 | 23 | 2016 |
Equilibrium crystal shape of GaAs and InAs considering surface vibration and new (111)B reconstruction: ab-initio thermodynamics IW Yeu, G Han, J Park, CS Hwang, JH Choi Scientific reports 9 (1), 1127, 2019 | 18 | 2019 |
Surface reconstruction of InAs (001) depending on the pressure and temperature examined by density functional thermodynamics IW Yeu, J Park, G Han, CS Hwang, JH Choi Scientific reports 7 (1), 10691, 2017 | 17 | 2017 |
Atomistic Understanding of the Ferroelectric Properties of a Wurtzite‐Structure (AlN)n/(ScN)m Superlattice KH Ye, G Han, IW Yeu, CS Hwang, JH Choi physica status solidi (RRL)–Rapid Research Letters 15 (5), 2100009, 2021 | 15 | 2021 |
Atomistic prediction on the configuration-and temperature-dependent dielectric constant of Be 0.25 Mg 0.75 O superlattice as a high-κ dielectric layer G Han, IW Yeu, KH Ye, SC Lee, CS Hwang, JH Choi Journal of Materials Chemistry C 9 (3), 851-859, 2021 | 9 | 2021 |
An ab initio approach on the asymmetric stacking of GaAs <111> nanowires grown by a vapor–solid method IW Yeu, G Han, CS Hwang, JH Choi Nanoscale 12 (34), 17703-17714, 2020 | 9 | 2020 |
Theoretical understanding of the catalyst-free growth mechanism of GaAs <111> B nanowires IW Yeu, G Han, J Park, CS Hwang, JH Choi Applied Surface Science 497, 143740, 2019 | 8 | 2019 |
Optical control of the layer degree of freedom through Wannier–Stark states in polar 3R MoS2 J Park, IW Yeu, G Han, C Jang, JY Kwak, CS Hwang, JH Choi Journal of Physics: Condensed Matter 31 (31), 315502, 2019 | 8 | 2019 |
ænet-PyTorch: a GPU-supported implementation for machine learning atomic potentials training NA Jon Lopez-Zorrilla, Xabier M Aretxabaleta, In Won Yeu, Inigo Etxebarria ... J. Chem. Phys. 158 (16), 164105, 2023 | 7 | 2023 |
Effect of local strain energy to predict accurate phase diagram of III–V pseudobinary systems: case of Ga (As, Sb) and (In, Ga) As G Han, IW Yeu, J Park, KH Ye, SC Lee, CS Hwang, JH Choi Journal of Physics D: Applied Physics 54 (4), 045104, 2020 | 5 | 2020 |
Comprehensive interpretations of thermodynamic and kinetic effects on the phase fractions in Hf1-xZrxO2 by first principle calculations KH Ye, IW Yeu, G Han, T Jeong, S Yoon, D Kim, CS Hwang, JH Choi Applied Physics Reviews 10 (3), 2023 | 4 | 2023 |
The Contrasting Impacts of the Al2O3 and Y2O3 Insertion Layers on the Crystallization of ZrO2 Films for Dynamic Random Access Memory Capacitors H Seo, IW Yeu, DS Kwon, DG Kim, J Lim, TK Kim, H Paik, JH Choi, ... Advanced Electronic Materials 8 (7), 2200099, 2022 | 4 | 2022 |
Role of the Short‐Range Order in Amorphous Oxide on MoS2/a‐SiO2 and MoS2/a‐HfO2 Interfaces J Park, IW Yeu, G Han, CS Hwang, JH Choi physica status solidi (b) 256 (8), 1900002, 2019 | 4 | 2019 |
Atomistic prediction on the composition-and configuration-dependent bandgap of Ga (As, Sb) using cluster expansion and ab initio thermodynamics G Han, IW Yeu, KH Ye, CS Hwang, JH Choi Materials Science and Engineering: B 280, 115713, 2022 | 3 | 2022 |
Surface morphology evolution and underlying defects in homoepitaxial growth of GaAs (110) H Kim, IW Yeu, G Han, G Ju, YJ Lee, Y Shin, JH Choi, HC Koo, H Kim Journal of Alloys and Compounds 874, 159848, 2021 | 3 | 2021 |
InterPhon: Ab initio interface phonon calculations within a 3D electronic structure framework IW Yeu, G Han, KH Ye, CS Hwang, JH Choi Computer Physics Communications 268, 108089, 2021 | 2 | 2021 |
Initial oxidation and surface stability diagram of Ge (100) as a function of the temperature and oxygen partial pressure through ab initio thermodynamics K Liu, IW Yeu, CS Hwang, JH Choi Physica Scripta 95 (2), 025701, 2019 | 1 | 2019 |
Study of Charge Transition-Driven Resistive Switching Mechanism in TiO2-based Random Access Memory via Density Functional Theory T Jeong, IW Yeu, KH Ye, S Yoon, D Kim, CS Hwang, JH Choi Nanoscale, 2024 | | 2024 |