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Patrick Vogt
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Reaction kinetics and growth window for plasma-assisted molecular beam epitaxy of Ga2O3: Incorporation of Ga vs. Ga2O desorption
P Vogt, O Bierwagen
Applied Physics Letters 108 (7), 2016
1612016
Epitaxial stabilization of pseudomorphic α-Ga2O3 on sapphire (0001)
R Schewski, G Wagner, M Baldini, D Gogova, Z Galazka, T Schulz, ...
Applied physics express 8 (1), 011101, 2014
1302014
The competing oxide and sub-oxide formation in metal-oxide molecular beam epitaxy
P Vogt, O Bierwagen
Applied Physics Letters 106 (8), 2015
1062015
Metal-exchange catalysis in the growth of sesquioxides: Towards heterostructures of transparent oxide semiconductors
P Vogt, O Brandt, H Riechert, J Lähnemann, O Bierwagen
Physical review letters 119 (19), 196001, 2017
872017
Metal-oxide catalyzed epitaxy (MOCATAXY): The example of the O plasma-assisted molecular beam epitaxy of β-(AlxGa1− x) 2O3/β-Ga2O3 heterostructures
P Vogt, A Mauze, F Wu, B Bonef, JS Speck
Applied Physics Express 11 (11), 115503, 2018
792018
Phase formation and strain relaxation of Ga2O3 on c-plane and a-plane sapphire substrates as studied by synchrotron-based x-ray diffraction
Z Cheng, M Hanke, P Vogt, O Bierwagen, A Trampert
Applied Physics Letters 111 (16), 2017
732017
Faceting and metal-exchange catalysis in (010) β-Ga2O3 thin films homoepitaxially grown by plasma-assisted molecular beam epitaxy
P Mazzolini, P Vogt, R Schewski, C Wouters, M Albrecht, O Bierwagen
APL Materials 7 (2), 2019
722019
Adsorption-controlled growth of Ga2O3 by suboxide molecular-beam epitaxy
P Vogt, FVE Hensling, K Azizie, CS Chang, D Turner, J Park, ...
Apl Materials 9 (3), 2021
522021
Evidence of -wave superconductivity in KNaFeAs () single crystals from low-temperature specific-heat measurements
M Abdel-Hafiez, V Grinenko, S Aswartham, I Morozov, M Roslova, ...
Physical Review B 87 (18), 180507, 2013
452013
Influence of Polymorphism on the Electronic Structure of Ga2O3
JEN Swallow, C Vorwerk, P Mazzolini, P Vogt, O Bierwagen, A Karg, ...
Chemistry of Materials 32 (19), 8460-8470, 2020
422020
Thermal stability of epitaxial α-Ga2O3 and (Al, Ga) 2O3 layers on m-plane sapphire
JP McCandless, CS Chang, K Nomoto, J Casamento, V Protasenko, ...
Applied Physics Letters 119 (6), 2021
382021
Quantitative subcompound-mediated reaction model for the molecular beam epitaxy of III-VI and IV-VI thin films: Applied to , , and
P Vogt, O Bierwagen
Physical Review Materials 2 (12), 120401, 2018
362018
Comparison of the growth kinetics of In2O3 and Ga2O3 and their suboxide desorption during plasma-assisted molecular beam epitaxy
P Vogt, O Bierwagen
Applied Physics Letters 109 (6), 2016
362016
Kinetics versus thermodynamics of the metal incorporation in molecular beam epitaxy of (InxGa1− x) 2O3
P Vogt, O Bierwagen
APL Materials 4 (8), 2016
362016
Domain matching epitaxy of cubic In2O3 on r‐plane sapphire
P Vogt, A Trampert, M Ramsteiner, O Bierwagen
physica status solidi (a) 212 (7), 1433-1439, 2015
212015
Controlled Si doping of β-Ga2O3 by molecular beam epitaxy
DJ J. P. McCandless, V. Protasenko, B. W. Morell, E. Steinbrunner, A. T ...
Applied Physics Letters 121, 072108, 2022
172022
Silicon-doped β-Ga2O3 films grown at 1 µm/h by suboxide molecular-beam epitaxy
K Azizie, FVE Hensling, CA Gorsak, Y Kim, NA Pieczulewski, DM Dryden, ...
APL materials 11 (4), 2023
162023
Growth kinetics, thermodynamics, and phase formation of group-III and IV oxides during molecular beam epitaxy
P Vogt
Berlin: Humboldt-Universität zu Berlin, 2017
132017
Extending the kinetic and thermodynamic limits of molecular-beam epitaxy utilizing suboxide sources or metal-oxide-catalyzed epitaxy
P Vogt, FVE Hensling, K Azizie, JP McCandless, J Park, K DeLello, ...
Physical Review Applied 17 (3), 034021, 2022
112022
Growth of α-Ga2O3 on α-Al2O3 by conventional molecular-beam epitaxy and metal–oxide-catalyzed epitaxy
JP McCandless, D Rowe, N Pieczulewski, V Protasenko, M Alonso-Orts, ...
Japanese Journal of Applied Physics 62 (SF), SF1013, 2023
42023
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