Reaction kinetics and growth window for plasma-assisted molecular beam epitaxy of Ga2O3: Incorporation of Ga vs. Ga2O desorption P Vogt, O Bierwagen Applied Physics Letters 108 (7), 2016 | 161 | 2016 |
Epitaxial stabilization of pseudomorphic α-Ga2O3 on sapphire (0001) R Schewski, G Wagner, M Baldini, D Gogova, Z Galazka, T Schulz, ... Applied physics express 8 (1), 011101, 2014 | 130 | 2014 |
The competing oxide and sub-oxide formation in metal-oxide molecular beam epitaxy P Vogt, O Bierwagen Applied Physics Letters 106 (8), 2015 | 106 | 2015 |
Metal-exchange catalysis in the growth of sesquioxides: Towards heterostructures of transparent oxide semiconductors P Vogt, O Brandt, H Riechert, J Lähnemann, O Bierwagen Physical review letters 119 (19), 196001, 2017 | 87 | 2017 |
Metal-oxide catalyzed epitaxy (MOCATAXY): The example of the O plasma-assisted molecular beam epitaxy of β-(AlxGa1− x) 2O3/β-Ga2O3 heterostructures P Vogt, A Mauze, F Wu, B Bonef, JS Speck Applied Physics Express 11 (11), 115503, 2018 | 79 | 2018 |
Phase formation and strain relaxation of Ga2O3 on c-plane and a-plane sapphire substrates as studied by synchrotron-based x-ray diffraction Z Cheng, M Hanke, P Vogt, O Bierwagen, A Trampert Applied Physics Letters 111 (16), 2017 | 73 | 2017 |
Faceting and metal-exchange catalysis in (010) β-Ga2O3 thin films homoepitaxially grown by plasma-assisted molecular beam epitaxy P Mazzolini, P Vogt, R Schewski, C Wouters, M Albrecht, O Bierwagen APL Materials 7 (2), 2019 | 72 | 2019 |
Adsorption-controlled growth of Ga2O3 by suboxide molecular-beam epitaxy P Vogt, FVE Hensling, K Azizie, CS Chang, D Turner, J Park, ... Apl Materials 9 (3), 2021 | 52 | 2021 |
Evidence of -wave superconductivity in KNaFeAs () single crystals from low-temperature specific-heat measurements M Abdel-Hafiez, V Grinenko, S Aswartham, I Morozov, M Roslova, ... Physical Review B 87 (18), 180507, 2013 | 45 | 2013 |
Influence of Polymorphism on the Electronic Structure of Ga2O3 JEN Swallow, C Vorwerk, P Mazzolini, P Vogt, O Bierwagen, A Karg, ... Chemistry of Materials 32 (19), 8460-8470, 2020 | 42 | 2020 |
Thermal stability of epitaxial α-Ga2O3 and (Al, Ga) 2O3 layers on m-plane sapphire JP McCandless, CS Chang, K Nomoto, J Casamento, V Protasenko, ... Applied Physics Letters 119 (6), 2021 | 38 | 2021 |
Quantitative subcompound-mediated reaction model for the molecular beam epitaxy of III-VI and IV-VI thin films: Applied to , , and P Vogt, O Bierwagen Physical Review Materials 2 (12), 120401, 2018 | 36 | 2018 |
Comparison of the growth kinetics of In2O3 and Ga2O3 and their suboxide desorption during plasma-assisted molecular beam epitaxy P Vogt, O Bierwagen Applied Physics Letters 109 (6), 2016 | 36 | 2016 |
Kinetics versus thermodynamics of the metal incorporation in molecular beam epitaxy of (InxGa1− x) 2O3 P Vogt, O Bierwagen APL Materials 4 (8), 2016 | 36 | 2016 |
Domain matching epitaxy of cubic In2O3 on r‐plane sapphire P Vogt, A Trampert, M Ramsteiner, O Bierwagen physica status solidi (a) 212 (7), 1433-1439, 2015 | 21 | 2015 |
Controlled Si doping of β-Ga2O3 by molecular beam epitaxy DJ J. P. McCandless, V. Protasenko, B. W. Morell, E. Steinbrunner, A. T ... Applied Physics Letters 121, 072108, 2022 | 17 | 2022 |
Silicon-doped β-Ga2O3 films grown at 1 µm/h by suboxide molecular-beam epitaxy K Azizie, FVE Hensling, CA Gorsak, Y Kim, NA Pieczulewski, DM Dryden, ... APL materials 11 (4), 2023 | 16 | 2023 |
Growth kinetics, thermodynamics, and phase formation of group-III and IV oxides during molecular beam epitaxy P Vogt Berlin: Humboldt-Universität zu Berlin, 2017 | 13 | 2017 |
Extending the kinetic and thermodynamic limits of molecular-beam epitaxy utilizing suboxide sources or metal-oxide-catalyzed epitaxy P Vogt, FVE Hensling, K Azizie, JP McCandless, J Park, K DeLello, ... Physical Review Applied 17 (3), 034021, 2022 | 11 | 2022 |
Growth of α-Ga2O3 on α-Al2O3 by conventional molecular-beam epitaxy and metal–oxide-catalyzed epitaxy JP McCandless, D Rowe, N Pieczulewski, V Protasenko, M Alonso-Orts, ... Japanese Journal of Applied Physics 62 (SF), SF1013, 2023 | 4 | 2023 |