| Impact of single charged gate oxide defects on the performance and scaling of nanoscaled FETs J Franco, B Kaczer, M Toledano-Luque, PJ Roussel, J Mitard, ... 2012 IEEE International Reliability Physics Symposium (IRPS), 5A. 4.1-5A. 4.6, 2012 | 137* | 2012 |
| Simulation of statistical aspects of charge trapping and related degradation in bulk MOSFETs in the presence of random discrete dopants MF Bukhori, S Roy, A Asenov IEEE transactions on electron devices 57 (4), 795-803, 2010 | 62 | 2010 |
| Advanced simulation of statistical variability and reliability in nano CMOS transistors A Asenov, S Roy, RA Brown, G Roy, C Alexander, C Riddet, C Millar, ... 2008 IEEE International Electron Devices Meeting, 1-1, 2008 | 51 | 2008 |
| The relevance of deeply-scaled FET threshold voltage shifts for operation lifetimes B Kaczer, J Franco, M Toledano-Luque, PJ Roussel, MF Bukhori, ... 2012 IEEE International Reliability Physics Symposium (IRPS), 5A. 2.1-5A. 2.6, 2012 | 44 | 2012 |
| Statistical aspects of reliability in bulk MOSFETs with multiple defect states and random discrete dopants MF Bukhori, S Roy, A Asenov Microelectronics Reliability 48 (8-9), 1549-1552, 2008 | 31 | 2008 |
| Development of the online student attendance monitoring system (SAMSTM) based on QR-codes and mobile devices AAA Rahni, N Zainal, MFZ Adna, NE Othman, MF Bukhori J. Eng. Sci. Technol 10, 28-40, 2015 | 28 | 2015 |
| Impact of Individual Charged Gate-Oxide Defects on the Entire–Characteristic of Nanoscaled FETs J Franco, B Kaczer, M Toledano-Luque, MF Bukhori, PJ Roussel, ... IEEE Electron device letters 33 (6), 779-781, 2012 | 20 | 2012 |
| A low power multiplexer based pass transistor logic full adder NA Kamsani, V Thangasamy, SJ Hashim, Z Yusoff, MF Bukhori, ... 2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM), 1-4, 2015 | 17 | 2015 |
| Simulation of statistical aspects of reliability in nano CMOS transistors MF Bukhori, AR Brown, S Roy, A Asenov 2009 IEEE International Integrated Reliability Workshop Final Report, 82-85, 2009 | 17 | 2009 |
| Wireless power transfer with on-chip inductor and class-E power amplifier for implant medical device applications V Thangasamy, NA Kamsani, V Thiruchelvam, MN Hamidon, SJ Hashim, ... 2015 IEEE Student Conference on Research and Development (SCOReD), 422-426, 2015 | 13 | 2015 |
| A multiband 130nm CMOS low noise amplifier for LTE bands NA Kamsani, V Thangasamy, MF Bukhori, S Shafie 2015 IEEE International Circuits and Systems Symposium (ICSyS), 106-110, 2015 | 11 | 2015 |
| Effects of Gate Stack Structural and Process Defectivity on High-Dielectric Dependence of NBTI Reliability in 32 nm Technology Node PMOSFETs H Hussin, N Soin, MF Bukhori, S Wan Muhamad Hatta, Y Abdul Wahab The Scientific World Journal 2014, 2014 | 9 | 2014 |
| ‘Atomistic’simulation of RTS amplitudes due to single and multiple charged defect states and their interactions MF Bukhori, T Grasser, B Kaczer, H Reisinger, A Asenov 2010 IEEE International Integrated Reliability Workshop Final Report, 76-79, 2010 | 8 | 2010 |
| New Simulation Method to Characterize the Recoverable Component of Dynamic Negative-Bias Temperature Instability in p-Channel Metal–Oxide–Semiconductor … H Hussin, N Soin, MF Bukhori, Y Abdul Wahab, S Shahabuddin Journal of electronic materials 43, 1207-1213, 2014 | 6 | 2014 |
| Optical cross add and drop multiplexer (OXADM) in CWDM ring network MS Ab-Rahman, AA Ehsan, H Hussin, MF Bukhori, S Shaari Journal of optical communications 28 (3), 201-205, 2007 | 6 | 2007 |
| An Overview of RF Power Amplifier Techniques and Effect of Transistor Scaling on its Design Parameters MF Bukhori International Journal of Applied Engineering Research 9 (2), 257-276, 2014 | 5 | 2014 |
| Digital-controlled multimode multiband power amplifier with multiple gated transistor V Thangasamy, NA Kamsani, MN Hamidon, SJ Hashim, Z Yusoff, ... IETE Technical Review 34 (1), 48-57, 2017 | 4 | 2017 |
| Characterization of NBTI-induced positive charges in 16 nm FinFET H Hussin, N Soin, SWM Hatta, MF Bukhori 2015 IEEE International Conference on Electron Devices and Solid-State …, 2015 | 4 | 2015 |
| Statistical simulation of RTS amplitude distribution in realistic bulk MOSFETs subject to random discreet dopants. MF Bukhori, S Roy, A Asenov 2008 9th International Conference on Ultimate Integration of Silicon, 171-174, 2008 | 4 | 2008 |
| A multiband 130nm CMOS second order band pass filter for LTE bands NA Kamsani, V Thangasamy, MF Bukhori, S Shafie 2015 IEEE International Circuits and Systems Symposium (ICSyS), 100-105, 2015 | 3 | 2015 |
