| Low-resistance Ti/Al/Ti/Au multilayer ohmic contact to DF Wang, F Shiwei, C Lu, A Motayed, M Jah, SN Mohammad, KA Jones, ... Journal of Applied Physics 89 (11), 6214-6217, 2001 | 156 | 2001 |
| Junction temperature measurement method for power MOSFETs using turn-on delay of impulse signal B Shi, S Feng, L Shi, D Shi, Y Zhang, H Zhu IEEE Transactions on Power Electronics 33 (6), 5274-5282, 2017 | 39 | 2017 |
| Effect of self-heating on the drain current transient response in AlGaN/GaN HEMTs Y Zhang, S Feng, H Zhu, C Guo, B Deng, G Zhang IEEE electron device letters 35 (3), 345-347, 2014 | 39 | 2014 |
| Imaging a magnetic-breakout solar eruption Y Chen, G Du, D Zhao, Z Wu, W Liu, B Wang, G Ruan, S Feng, H Song The Astrophysical Journal Letters 820 (2), L37, 2016 | 38 | 2016 |
| A new differential amplitude spectrum for analyzing the trapping effect in GaN HEMTs based on the drain current transient X Zheng, S Feng, Y Zhang, X He, Y Wang IEEE Transactions on Electron Devices 64 (4), 1498-1504, 2017 | 31 | 2017 |
| Two-dimensional transient simulations of the self-heating effects in GaN-based HEMTs Y Zhang, S Feng, H Zhu, J Zhang, B Deng Microelectronics Reliability 53 (5), 694-700, 2013 | 31 | 2013 |
| Evaluation of thermal resistance constitution for packaged AlGaN/GaN high electron mobility transistors by structure function method GC Zhang, SW Feng, Z Zhou, JW Li, CS Guo Chinese Physics B 20 (2), 027202, 2011 | 28 | 2011 |
| Identifying the spatial position and properties of traps in GaN HEMTs using current transient spectroscopy X Zheng, S Feng, Y Zhang, J Yang Microelectronics Reliability 63, 46-51, 2016 | 27 | 2016 |
| An observational revisit of band-split solar type-II radio bursts G Du, X Kong, Y Chen, S Feng, B Wang, G Li The Astrophysical Journal 812 (1), 52, 2015 | 27 | 2015 |
| An eruptive hot-channel structure observed at metric wavelength as a moving Type-IV solar radio burst V Vasanth, Y Chen, S Feng, S Ma, G Du, H Song, X Kong, B Wang The Astrophysical Journal Letters 830 (1), L2, 2016 | 26 | 2016 |
| The thermal properties of AlGaAs/GaAs laser diode bars analyzed by the transient thermal technique Y Qiao, S Feng, C Xiong, X Ma, H Zhu, C Guo, G Wei Solid-state electronics 79, 192-195, 2013 | 26 | 2013 |
| Junction temperature measurement method for SiC bipolar junction transistor using base–collector voltage drop at low current B Shi, S Feng, Y Zhang, K Bai, Y Xiao, L Shi, H Zhu, C Guo IEEE Transactions on Power Electronics 34 (10), 10136-10142, 2019 | 25 | 2019 |
| Thermal investigation of LED array with multiple packages based on the superposition method D Shi, S Feng, Y Zhang, Y Qiao, B Deng Microelectronics journal 46 (7), 632-636, 2015 | 25 | 2015 |
| Measurement and study on thermal characteristics of semiconductor devices by electrical method S Feng, X Xie, C Lu, X Zhang, Y He, G Shen CHINESE JOURNAL OF SEMICONDUCTORS-CHINESE EDITION- 20, 358-364, 1999 | 25 | 1999 |
| Thermal fatigue characteristics of die attach materials for packaged high-brightness LEDs G Zhang, S Feng, Z Zhou, J Liu, J Li, H Zhu IEEE Transactions on Components, Packaging and Manufacturing Technology 2 (8 …, 2012 | 21 | 2012 |
| Spatial hole burning degradation of AlGaAs/GaAs laser diodes YB Qiao, SW Feng, C Xiong, XW Wang, XY Ma, H Zhu, GH Wei Applied Physics Letters 99 (10), 2011 | 21 | 2011 |
| The thermal characterization of packaged semiconductor device S Feng, X Xie, C Lu, G Shen, G Gao, X Zhang Sixteenth Annual IEEE Semiconductor Thermal Measurement and Management …, 2000 | 20 | 2000 |
| Effect of substrate thinning on the electronic transport characteristics of AlGaN/GaN HEMTs H Zhu, X Meng, X Zheng, Y Yang, S Feng, Y Zhang, C Guo Solid-State Electronics 145, 40-45, 2018 | 18 | 2018 |
| The effect of external stress on the electrical characteristics of AlGaN/GaN HEMTs K Liu, H Zhu, S Feng, L Shi, Y Zhang, C Guo Microelectronics Reliability 55 (6), 886-889, 2015 | 18 | 2015 |
| A drain–source connection technique: Thermal resistance measurement method for GaN HEMTs using TSEP at high voltage X Li, S Feng, C Liu, Y Zhang, K Bai, Y Xiao, X Zheng, X He, S Pan, G Lin, ... IEEE Transactions on Electron Devices 67 (12), 5454-5459, 2020 | 17 | 2020 |
Yamin ZhangBeijing University of TechnologyVerified email at bjut.edu.cn
