Type-I quantum well cascade diode lasers emitting near 3 μm L Shterengas, R Liang, G Kipshidze, T Hosoda, S Suchalkin, G Belenky Applied Physics Letters 103 (12), 2013 | 57 | 2013 |
Cascade type-I quantum well diode lasers emitting 960 mW near 3 μm L Shterengas, R Liang, G Kipshidze, T Hosoda, G Belenky, SS Bowman, ... Applied Physics Letters 105 (16), 2014 | 55 | 2014 |
Cascade pumping of 1.9–3.3 μm type-i quantum well GaSb-based diode lasers L Shterengas, G Kipshidze, T Hosoda, R Liang, T Feng, M Wang, A Stein, ... IEEE Journal of Selected Topics in Quantum Electronics 23 (6), 1-8, 2017 | 52 | 2017 |
High-Power 2.2-m Diode Lasers With Heavily Strained Active Region R Liang, J Chen, G Kipshidze, D Westerfeld, L Shterengas, G Belenky IEEE Photonics Technology Letters 23 (10), 603-605, 2011 | 46 | 2011 |
Cascade pumping of GaSb-based type-I quantum well diode lasers L Shterengas, R Liang, G Kipshidze, T Hosoda, S Suchalkin, G Belenky Novel In-Plane Semiconductor Lasers XIII 9002, 92-101, 2014 | 23 | 2014 |
Distributed feedback 3.27 µm diode lasers with continuous‐wave output power above 15 mW at room temperature R Liang, T Hosoda, L Shterengas, A Stein, M Lu, G Kipshidze, G Belenky Electronics Letters 50 (19), 1378-1380, 2014 | 21 | 2014 |
Narrow Ridge - Cascade Diode Lasers With Output Power Above 100 mW at Room Temperature R Liang, T Hosoda, L Shterengas, A Stein, M Lu, G Kipshidze, G Belenky IEEE Photonics Technology Letters 27 (23), 2425-2428, 2015 | 16 | 2015 |
Room temperature operated diffraction limited λ≃ 3 µm diode lasers with 37 mW of continuous‐wave output power T Hosoda, R Liang, G Kipshidze, L Shterengas, G Belenky Electronics letters 49 (10), 667-669, 2013 | 13 | 2013 |
Rapid fabrication of bulk graded Al2O3/YAG/YSZ eutectics by combustion synthesis under ultra-high-gravity field J Pei, JT Li, R Liang, KX Chen Ceramics International 35 (8), 3269-3273, 2009 | 13 | 2009 |
GaSb-Based Diode Lasers With Asymmetric Separate Confinement Heterostructure R Liang, T Hosoda, G Kipshidze, L Shterengas, G Belenky Photonics Technology Letters, IEEE 25 (10), 925-928, 2013 | 12 | 2013 |
Diffraction limited 3.15 μm cascade diode lasers R Liang, L Shterengas, T Hosoda, A Stein, M Lu, G Kipshidze, G Belenky Semiconductor Science and Technology 29 (11), 115016, 2014 | 9 | 2014 |
3.3 – 3.4 µm Diode Lasers Based on Triple-layer GaInAsSb Quantum Wells R Liang, G Kipshidze, T Hosoda, L Shterengas, G Belenky IEEE Photonics Technology Letters 26 (7), 664, 2014 | 8 | 2014 |
Single spatial mode 2–2.2 µm diode lasers fabricated by selective wet etching S Jung, R Liang, G Kipshidze, S Suchalkin, L Shterengas, G Belenky Semiconductor Science and Technology 27 (8), 085004, 2012 | 8 | 2012 |
Fabrication of an Al2O3/YAG/ZrO2 Ternary Eutectic by Combustion Synthesis Melt Casting Under Ultra‐High Gravity R Liang, J Pei, J Li, H Jin, K Chen Journal of the American Ceramic Society 92 (2), 549-552, 2009 | 8 | 2009 |
Gasb-based mid-infrared single lateral mode lasers fabricated by selective wet etching technique with an etch stop layer S Jung, G Kipshidze, R Liang, S Suchalkin, L Shterengas, G Belenky Journal of electronic materials 41, 899-904, 2012 | 7 | 2012 |
Progress in development of room temperature cw gasb based diode lasers for 2-3.5 μm spectral region T HOSODA, J CHEN, G TSVID, D WESTERFELD, RUI LIANG, ... International Journal of High Speed Electronics and Systems 20 (01), 43-49, 2011 | 7 | 2011 |
Surface anisotropy of CrxN1− x films prepared on an inner wall by magnetic sputtering F Zeng, R Liang, XW Li, SP Wen, Y Gao, YL Gu, F Pan Applied surface science 253 (18), 7563-7568, 2007 | 6 | 2007 |
Preparation of ceramic foam filters via direct foaming H Lin, J Yang, L Tang, X Xi, R Liang, Y Huang Xiyou Jinshu Cailiao yu Gongcheng(Rare Metal Materials and Engineering) 36 …, 2007 | 4 | 2007 |
Type-I QW cascade diode lasers with 830 mW of CW power at 3 µm L Shterengas, R Liang, T Hosoda, G Kipshidze, G Belenky, SS Bowman, ... Novel In-Plane Semiconductor Lasers XIV 9382, 123-131, 2015 | 3 | 2015 |
Type-I GaSb based diode lasers operating at room temperature in 2 to 3.5 µm spectral region J Chen, T Hosoda, G Tsvid, R Liang, D Westerfeld, G Kipshidze, ... Laser Technology for Defense and Security VI 7686, 164-168, 2010 | 3 | 2010 |