| Explicit analytical charge and capacitance models of undoped double-gate MOSFETs O Moldovan, D Jimenez, JR Guitart, FA Chaves, B Iniguez IEEE Transactions on Electron Devices 54 (7), 1718-1724, 2007 | 106 | 2007 |
| Tunable Graphene-GaSe Dual Heterojunction Device. W Kim, C Li, FA Chaves, D Jiménez, RD Rodriguez, J Susoma, ... Advanced Materials (Deerfield Beach, Fla.) 28 (9), 1845-1852, 2016 | 101 | 2016 |
| A simple drain current model for Schottky-barrier carbon nanotube field effect transistors D Jiménez, X Cartoixa, E Miranda, J Sune, FA Chaves, S Roche Nanotechnology 18 (2), 025201, 2006 | 83 | 2006 |
| Physical model of the contact resistivity of metal-graphene junctions FA Chaves, D Jiménez, AW Cummings, S Roche Journal of Applied Physics 115 (16), 2014 | 72 | 2014 |
| A physics-based model of gate-tunable metal–graphene contact resistance benchmarked against experimental data FA Chaves, D Jiménez, AA Sagade, W Kim, J Riikonen, H Lipsanen, ... 2D Materials 2 (2), 025006, 2015 | 38 | 2015 |
| Compact charge and capacitance modeling of undoped ultra-thin body (UTB) SOI MOSFETs O Moldovan, FA Chaves, D Jiménez, B Iñiguez Solid-State Electronics 52 (12), 1867-1871, 2008 | 27 | 2008 |
| Photoresponse of graphene-gated graphene-GaSe heterojunction devices W Kim, S Arpiainen, H Xue, M Soikkeli, M Qi, Z Sun, H Lipsanen, ... ACS Applied Nano Materials 1 (8), 3895-3902, 2018 | 24 | 2018 |
| Compact modeling technology for the simulation of integrated circuits based on graphene field‐effect transistors F Pasadas, PC Feijoo, N Mavredakis, A Pacheco‐Sanchez, FA Chaves, ... Advanced Materials 34 (48), 2201691, 2022 | 23 | 2022 |
| Electrostatics of metal–graphene interfaces: sharp p–n junctions for electron-optical applications FA Chaves, D Jiménez, JE Santos, P Bøggild, JM Caridad Nanoscale 11 (21), 10273-10281, 2019 | 23 | 2019 |
| Electrostatics of two-dimensional lateral junctions FA Chaves, D Jiménez Nanotechnology 29 (27), 275203, 2018 | 21 | 2018 |
| Ac ce d M us pt FA Chaves, D Jiménez Nanotechnology 29 (27), 1-13, 2018 | 15 | 2018 |
| Impact of graphene polycrystallinity on the performance of graphene field-effect transistors D Jiménez, AW Cummings, F Chaves, D Van Tuan, J Kotakoski, S Roche Applied physics letters 104 (4), 2014 | 15 | 2014 |
| A drain current model for Schottky-barrier CNT-FETs D Jiménez, X Cartoixà, E Miranda, J Suñé, FA Chaves, S Roche Journal of Computational Electronics 5, 361-364, 2006 | 13 | 2006 |
| Accurate calculation of gate tunneling current in double-gate and single-gate SOI MOSFETs through gate dielectric stacks FA Chaves, D Jimenez, FJG Ruiz, A Godoy, J Sune IEEE transactions on electron devices 59 (10), 2589-2596, 2012 | 11 | 2012 |
| Accurate prediction of the volume inversion impact on undoped Double Gate MOSFET capacitances O Moldovan, FA Chaves, D Jimenez, JP Raskin, B Iniguez International Journal of Numerical Modelling: Electronic Networks, Devices …, 2010 | 11 | 2010 |
| Explicit quantum potential and charge model for double-gate MOSFETs F Chaves, D Jiménez, J Suñé Solid-state electronics 54 (5), 530-535, 2010 | 11 | 2010 |
| Characterization at the nanometer scale of local electron beam irradiation of CNT based devices G Rius, A Verdaguer, FA Chaves, I Martin, P Godignon, E Lora-Tamayo, ... Microelectronic engineering 85 (5-6), 1413-1416, 2008 | 11 | 2008 |
| A simple drain current model for Schottky-barrier carbon nanotube field effect transistors D Jiménez, X Cartoixà, E Miranda, J Suñé, FA Chaves, S Roche Nanotechnology 18 (41), 419001, 2007 | 11 | 2007 |
| 2D pn junctions driven out-of-equilibrium FA Chaves, PC Feijoo, D Jiménez Nanoscale advances 2 (8), 3252-3262, 2020 | 10 | 2020 |
| The role of the Fermi level pinning in gate tunable graphene-semiconductor junctions FA Chaves, D Jiménez IEEE Transactions on Electron Devices 63 (11), 4521-4526, 2016 | 10 | 2016 |
