| Epitaxial GeSn: Impact of process conditions on material quality R Loo, Y Shimura, S Ike, A Vohra, T Stoica, D Stange, D Buca, D Kohen, ... Semiconductor science and technology 33 (11), 114010, 2018 | 26 | 2018 |
| Characterization of locally strained Ge1− xSnx/Ge fine structures by synchrotron X-ray microdiffraction S Ike, O Nakatsuka, Y Moriyama, M Kurosawa, N Taoka, Y Imai, S Kimura, ... Applied Physics Letters 106 (18), 2015 | 17 | 2015 |
| Characterization of crystallinity of Ge1− xSnx epitaxial layers grown using metal-organic chemical vapor deposition Y Inuzuka, S Ike, T Asano, W Takeuchi, O Nakatsuka, S Zaima Thin Solid Films 602, 7-12, 2016 | 13 | 2016 |
| Epitaxial Ge1− xSnx layers grown by metal-organic chemical vapor deposition using tertiary-butyl-germane and tri-butyl-vinyl-tin Y Inuzuka, S Ike, T Asano, W Takeuchi, N Taoka, O Nakatsuka, S Zaima ECS Solid State Letters 4 (8), P59, 2015 | 11 | 2015 |
| Formation and characterization of locally strained Ge1− xSnx/Ge microstructures S Ike, Y Moriyama, M Kurosawa, N Taoka, O Nakatsuka, Y Imai, S Kimura, ... Thin Solid Films 557, 164-168, 2014 | 9 | 2014 |
| Growth and applications of GeSn-related group-IV semiconductor materials S Zaima, O Nakatsuka, T Asano, T Yamaha, S Ike, A Suzuki, K Takahashi, ... 2016 IEEE Photonics Society Summer Topical Meeting Series (SUM), 37-38, 2016 | 6 | 2016 |
| Analysis of Microscopic Strain and Crystalline Structure in Ge/Ge1− X Sn x Fine Structures by Using Synchrotron X-ray Microdiffraction S Ike, O Nakatsuka, Y Inuzuka, T Washizu, W Takeuchi, Y Imai, S Kimura, ... ECS Transactions 75 (8), 769, 2016 | 4 | 2016 |
| Challenges of Energy Band Engineering with New Sn-Related Group IV Semiconductor Materials for Future Integrated Circuits S Zaima, O Nakatsuka, T Yamaha, T Asano, S Ike, A Suzuki, M Kurosawa, ... ECS Transactions 69 (10), 89, 2015 | 4 | 2015 |
| Selective epitaxial growth of Ge1− xSnx on Si by using metal-organic chemical vapor deposition T Washizu, S Ike, Y Inuzuka, W Takeuchi, O Nakatsuka, S Zaima Journal of Crystal Growth 468, 614-619, 2017 | 3 | 2017 |
| Influence of precursor gas on SiGe epitaxial material quality in terms of structural and electrical defects S Ike, E Simoen, Y Shimura, A Hikavyy, W Vandervorst, R Loo, ... Japanese Journal of Applied Physics 55 (4S), 04EJ11, 2016 | 3 | 2016 |
| Film forming method S Azumo, S Ike, Y Kawano US Patent App. 17/028,230, 2021 | 2 | 2021 |
| In situ phosphorus-doped Ge1− xSnx layers grown using low-temperature metal-organic chemical vapor deposition S Ike, W Takeuchi, O Nakatsuka, S Zaima Semiconductor Science and Technology 32 (12), 124001, 2017 | 2 | 2017 |
| Evaluation of user support of a hemispherical sub-display with GUI pointing functions S Ike, S Yokoyama, Y Yamanishi, N Matsuuchi, K Shimamura, ... Human-Computer Interaction. Interaction Techniques and Environments: 14th …, 2011 | 2 | 2011 |
| Film formation method K Ouchi, S Azumo, Y Kawano, S Ike US Patent App. 17/753,490, 2022 | 1 | 2022 |
| Film forming method and film forming apparatus Y Wagatsuma, T Kamada, S Ike, S Azumo US Patent 11,417,514, 2022 | 1 | 2022 |
| Film formation method and film formation device Y Kawano, S Azumo, S Ike US Patent App. 17/598,175, 2022 | 1 | 2022 |
| Epitaxial growth of heavily doped n+-Ge layers using metal-organic chemical vapor deposition with in situ phosphorus doping S Ike, W Takeuchi, O Nakatsuka, S Zaima Thin Solid Films 645, 57-63, 2018 | 1 | 2018 |
| Selective growth of Ge1− xSnx epitaxial layer on patterned SiO2/Si substrate by metal–organic chemical vapor deposition W Takeuchi, T Washizu, S Ike, O Nakatsuka, S Zaima Japanese Journal of Applied Physics 57 (1S), 01AC05, 2017 | 1 | 2017 |
| Film formation method S Ike, S Azumo, Y Kawano US Patent App. 18/255,133, 2024 | | 2024 |
| Method for forming film S Ike, S Azumo, Y Kawano, H Murakami US Patent 11,830,741, 2023 | | 2023 |
