A 90 nm 1.8 V 512 Mb diode-switch PRAM with 266 MB/s read throughput KJ Lee, BH Cho, WY Cho, S Kang, BG Choi, HR Oh, CS Lee, HJ Kim, ...
IEEE Journal of Solid-State Circuits 43 (1), 150-162, 2008
367 2008 Full integration and reliability evaluation of phase-change RAM based on 0.24/spl mu/m-CMOS technologies YN Hwang, JS Hong, SH Lee, SJ Ahn, GT Jeong, GH Koh, JH Oh, HJ Kim, ...
2003 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No …, 2003
350 2003 Highly manufacturable high density phase change memory of 64Mb and beyond SJ Ahn, YJ Song, CW Jeong, JM Shin, Y Fai, YN Hwang, SH Lee, ...
IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004 …, 2004
342 2004 Highly reliable 50nm contact cell technology for 256Mb PRAM SJ Ahn, YN Hwang, YJ Song, SH Lee, SY Lee, JH Park, CW Jeong, ...
Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005., 98-99, 2005
333 2005 Full integration of highly manufacturable 512Mb PRAM based on 90nm technology JH Oh, JH Park, YS Lim, HS Lim, YT Oh, JS Kim, JM Shin, YJ Song, ...
2006 International Electron Devices Meeting, 1-4, 2006
316 2006 A 0.1- 1.8-V 256-Mb Phase-Change Random Access Memory (PRAM) With 66-MHz Synchronous Burst-Read Operation S Kang, WY Cho, BH Cho, KJ Lee, CS Lee, HR Oh, BG Choi, Q Wang, ...
IEEE Journal of Solid-State Circuits 42 (1), 210-218, 2006
250 2006 Memory device employing NVRAM and flash memory cells BG Jeon, BJ Min, HS Jeong
US Patent 7,916,538, 2011
249 2011 A 0.18-/spl mu/m 3.0-V 64-Mb nonvolatile phase-transition random access memory (PRAM) WY Cho, BH Cho, BG Choi, HR Oh, S Kang, KS Kim, KH Kim, DE Kim, ...
IEEE Journal of Solid-State Circuits 40 (1), 293-300, 2005
248 2005 Enhanced write performance of a 64-Mb phase-change random access memory HR Oh, B Cho, WY Cho, S Kang, B Choi, H Kim, K Kim, D Kim, C Kwak, ...
IEEE Journal of Solid-State Circuits 41 (1), 122-126, 2005
146 2005 Writing current reduction for high-density phase-change RAM YN Hwang, SH Lee, SJ Ahn, SY Lee, KC Ryoo, HS Hong, HC Koo, ...
IEEE International Electron Devices Meeting 2003, 37.1. 1-37.1. 4, 2003
145 2003 Full integration and cell characteristics for 64Mb nonvolatile PRAM SH Lee, YN Hwang, SY Lee, KC Ryoo, SJ Ahn, HC Koo, CW Jeong, ...
Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004., 20-21, 2004
144 2004 Phase-change behavior of stoichiometric Ge2Sb2Te5 in phase-change random access memory JB Park, GS Park, HS Baik, JH Lee, H Jeong, K Kim
Journal of the electrochemical society 154 (3), H139, 2007
132 2007 Two-bit cell operation in diode-switch phase change memory cells with 90nm technology DH Kang, JH Lee, JH Kong, D Ha, J Yu, CY Um, JH Park, F Yeung, ...
2008 Symposium on VLSI Technology, 98-99, 2008
128 2008 Highly reliable 256Mb PRAM with advanced ring contact technology and novel encapsulating technology YJ Song, KC Ryoo, YN Hwang, CW Jeong, DW Lim, SS Park, JI Kim, ...
2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers., 118-119, 2006
123 2006 Memristor devices for neural networks H Jeong, L Shi
Journal of Physics D: Applied Physics 52 (2), 023003, 2018
118 2018 Effect of lattice contraction on the Raman shifts of CdSe quantum dots in glass matrices YN Hwang, S Shin, HL Park, SH Park, U Kim, HS Jeong, E Shin, D Kim
Physical Review B 54 (21), 15120, 1996
114 1996 Semiconductor device having multilayer interconnection structure and manufacturing method thereof W Yang, K Kim, HS Jeong
US Patent 6,836,019, 2004
95 2004 Changes in the electronic structures and optical band gap of Ge2Sb2Te5 and N-doped Ge2Sb2Te5 during phase transition YK Kim, K Jeong, MH Cho, U Hwang, HS Jeong, K Kim
Applied physics letters 90 (17), 2007
92 2007 Ge nitride formation in N-doped amorphous Ge2Sb2Te5 MC Jung, YM Lee, HD Kim, MG Kim, HJ Shin, KH Kim, SA Song, ...
Applied Physics Letters 91 (8), 2007
88 2007 A 0.24-μm 2.0-V 1T1MTJ 16-kb nonvolatile magnetoresistance RAM with self-reference sensing scheme G Jeong, W Cho, S Ahn, H Jeong, G Koh, Y Hwang, K Kim
IEEE Journal of solid-state circuits 38 (11), 1906-1910, 2003
76 2003