| An artificial spiking afferent nerve based on Mott memristors for neurorobotics X Zhang, Y Zhuo, Q Luo, Z Wu, R Midya, Z Wang, W Song, R Wang, ... Nature communications 11 (1), 51, 2020 | 290 | 2020 |
| A highly CMOS compatible hafnia-based ferroelectric diode Q Luo, Y Cheng, J Yang, R Cao, H Ma, Y Yang, R Huang, W Wei, ... Nature communications 11 (1), 1391, 2020 | 152 | 2020 |
| Super non-linear RRAM with ultra-low power for 3D vertical nano-crossbar arrays Q Luo, X Xu, H Liu, H Lv, T Gong, S Long, Q Liu, H Sun, W Banerjee, L Li, ... Nanoscale 8 (34), 15629-15636, 2016 | 108 | 2016 |
| Improvement of endurance in HZO-based ferroelectric capacitor using Ru electrode R Cao, B Song, D Shang, Y Yang, Q Luo, S Wu, Y Li, Y Wang, H Lv, Q Liu, ... IEEE Electron Device Letters 40 (11), 1744-1747, 2019 | 107 | 2019 |
| Full imitation of synaptic metaplasticity based on memristor devices Q Wu, H Wang, Q Luo, W Banerjee, J Cao, X Zhang, F Wu, Q Liu, L Li, ... Nanoscale 10 (13), 5875-5881, 2018 | 106 | 2018 |
| Demonstration of 3D vertical RRAM with ultra low-leakage, high-selectivity and self-compliance memory cells Q Luo, X Xu, H Liu, H Lv, T Gong, S Long, Q Liu, H Sun, W Banerjee, L Li, ... 2015 IEEE International Electron Devices Meeting (IEDM), 10.2. 1-10.2. 4, 2015 | 99 | 2015 |
| 8-Layers 3D vertical RRAM with excellent scalability towards storage class memory applications Q Luo, X Xu, T Gong, H Lv, D Dong, H Ma, P Yuan, J Gao, J Liu, Z Yu, J Li, ... 2017 IEEE International Electron Devices Meeting (IEDM), 2.7. 1-2.7. 4, 2017 | 96 | 2017 |
| Wake‐Up Effect in HfO2‐Based Ferroelectric Films P Jiang, Q Luo, X Xu, T Gong, P Yuan, Y Wang, Z Gao, W Wei, L Tai, H Lv Advanced Electronic Materials 7 (1), 2000728, 2021 | 90 | 2021 |
| Atomic view of filament growth in electrochemical memristive elements H Lv, X Xu, P Sun, H Liu, Q Luo, Q Liu, W Banerjee, H Sun, S Long, L Li, ... Scientific Reports 5 (1), 13311, 2015 | 88 | 2015 |
| Self-rectifying and forming-free resistive-switching device for embedded memory application Q Luo, X Zhang, Y Hu, T Gong, X Xu, P Yuan, H Ma, D Dong, H Lv, ... IEEE Electron Device Letters 39 (5), 664-667, 2018 | 84 | 2018 |
| Cu BEOL compatible selector with high selectivity (> 107), extremely low off-current (∼ pA) and high endurance (> 1010) Q Luo, X Xu, H Liu, H Lv, T Gong, S Long, Q Liu, H Sun, W Banerjee, L Li, ... 2015 IEEE International Electron Devices Meeting (IEDM), 10.4. 1-10.4. 4, 2015 | 76 | 2015 |
| Design of CMOS compatible, high‐speed, highly‐stable complementary switching with multilevel operation in 3D vertically stacked novel HfO2/Al2O3/TiOx (HAT) RRAM W Banerjee, X Zhang, Q Luo, H Lv, Q Liu, S Long, M Liu Advanced Electronic Materials 4 (2), 1700561, 2018 | 64 | 2018 |
| Fully CMOS compatible 3D vertical RRAM with self-aligned self-selective cell enabling sub-5nm scaling X Xu, Q Luo, T Gong, H Lv, S Long, Q Liu, SS Chung, J Li, M Liu 2016 IEEE Symposium on VLSI Technology, 1-2, 2016 | 63 | 2016 |
| A computing-in-memory macro based on three-dimensional resistive random-access memory Q Huo, Y Yang, Y Wang, D Lei, X Fu, Q Ren, X Xu, Q Luo, G Xing, C Chen, ... Nature Electronics 5 (7), 469-477, 2022 | 58 | 2022 |
| BEOL based RRAM with one extra-mask for low cost, highly reliable embedded application in 28 nm node and beyond H Lv, X Xu, P Yuan, D Dong, T Gong, J Liu, Z Yu, P Huang, K Zhang, ... 2017 IEEE International Electron Devices Meeting (IEDM), 2.4. 1-2.4. 4, 2017 | 55 | 2017 |
| Investigation of LRS dependence on the retention of HRS in CBRAM X Xu, H Lv, H Liu, Q Luo, T Gong, M Wang, G Wang, M Zhang, Y Li, Q Liu, ... Nanoscale Research Letters 10, 1-6, 2015 | 40 | 2015 |
| Composition-Dependent Ferroelectric Properties in Sputtered HfXZr1−XO2 Thin Films Q Luo, H Ma, H Su, KH Xue, R Cao, Z Gao, J Yu, T Gong, X Xu, J Yin, ... IEEE Electron Device Letters 40 (4), 570-573, 2019 | 39 | 2019 |
| Hybrid 1T e-DRAM and e-NVM realized in one 10 nm node ferro FinFET device with charge trapping and domain switching effects Q Luo, T Gong, Y Cheng, Q Zhang, H Yu, J Yu, H Ma, X Xu, K Huang, ... 2018 IEEE International Electron Devices Meeting (IEDM), 2.6. 1-2.6. 4, 2018 | 39 | 2018 |
| Deep Insights into the Failure Mechanisms in Field-cycled Ferroelectric Hf0.5Zr0.5O2 Thin Film: TDDB Characterizations and First-Principles Calculations W Wei, W Zhang, F Wang, X Ma, Q Wang, P Sang, X Zhan, Y Li, L Tai, ... 2020 IEEE International Electron Devices Meeting (IEDM), 39.6. 1-39.6. 4, 2020 | 35 | 2020 |
| A stable rhombohedral phase in ferroelectric Hf(Zr)1+xO2 capacitor with ultralow coercive field Y Wang, L Tao, R Guzman, Q Luo, W Zhou, Y Yang, Y Wei, Y Liu, P Jiang, ... Science 381 (6657), 558-563, 2023 | 34 | 2023 |
Hangbing LvInstitute of Microelectronics, Chinese Academy of SciencesVerified email at ime.ac.cn
