Follow
Jason P. Campbell
Jason P. Campbell
Verified email at nist.gov
Title
Cited by
Cited by
Year
Disease detection and management via single nanopore-based sensors
JE Reiner, A Balijepalli, JWF Robertson, J Campbell, J Suehle, ...
Chemical reviews 112 (12), 6431-6451, 2012
2532012
Atomic-scale defects involved in the negative-bias temperature instability
JP Campbell, PM Lenahan, CJ Cochrane, AT Krishnan, S Krishnan
IEEE Transactions on Device and Materials Reliability 7 (4), 540-557, 2007
1342007
Density of states of interface trap centers
JP Campbell, PM Lenahan
Applied physics letters 80 (11), 1945-1947, 2002
1182002
Random telegraph noise in highly scaled nMOSFETs
JP Campbell, J Qin, KP Cheung, LC Yu, JS Suehle, A Oates, K Sheng
2009 IEEE International Reliability Physics Symposium, 382-388, 2009
1082009
Electron spin resonance spectrometer and method for using same
JP Campbell, KP Cheung, JT Ryan, PM Lenahan
US Patent 9,507,004, 2016
952016
A simple series resistance extraction methodology for advanced CMOS devices
JP Campbell, KP Cheung, JS Suehle, A Oates
IEEE electron device letters 32 (8), 1047-1049, 2011
842011
Observations of NBTI-induced atomic-scale defects
JP Campbell, PM Lenahan, AT Krishnan, S Krishnan
IEEE Transactions on Device and Materials Reliability 6 (2), 117-122, 2006
832006
Modeling early breakdown failures of gate oxide in SiC power MOSFETs
Z Chbili, A Matsuda, J Chbili, JT Ryan, JP Campbell, M Lahbabi, ...
IEEE Transactions on Electron Devices 63 (9), 3605-3613, 2016
722016
Direct observation of the structure of defect centers involved in the negative bias temperature instability
JP Campbell, PM Lenahan, AT Krishnan, S Krishnan
Applied Physics Letters 87 (20), 2005
692005
NBTI: An atomic-scale defect perspective
JP Campbell, PM Lenahan, AT Krishnan, S Krishnan
2006 IEEE International Reliability Physics Symposium Proceedings, 442-447, 2006
602006
Identification of the atomic-scale defects involved in the negative bias temperature instability in plasma-nitrided p-channel metal-oxide-silicon field-effect transistors
JP Campbell, PM Lenahan, AT Krishnan, S Krishnan
Journal of Applied Physics 103 (4), 2008
532008
Oxide reliability of SiC MOS devices
L Yu, KP Cheung, J Campbell, JS Suehle, K Sheng
2008 IEEE International Integrated Reliability Workshop Final Report, 141-144, 2008
422008
Radiation-induced interface traps in MOS devices: Capture cross section and density of states of P/sub b1/silicon dangling bond centers
PM Lenahan, NA Bohna, JP Campbell
IEEE Transactions on Nuclear Science 49 (6), 2708-2712, 2002
412002
Large random telegraph noise in sub-threshold operation of nano-scale nMOSFETs
JP Campbell, LC Yu, KP Cheung, J Qin, JS Suehle, A Oates, K Sheng
2009 IEEE International Conference on IC Design and Technology, 17-20, 2009
382009
Interface-state capture cross section—Why does it vary so much?
JT Ryan, A Matsuda, JP Campbell, KP Cheung
Applied Physics Letters 106 (16), 2015
352015
Location, structure, and density of states of NBTI-induced defects in plasma nitrided pMOSFETs
JP Campbell, PM Lenahan, AT Krishnan, S Krishnan
2007 IEEE International Reliability Physics Symposium Proceedings. 45th …, 2007
352007
First Direct Experimental Studies of Hf0.5Zr0.5O2 Ferroelectric Polarization Switching Down to 100-picosecond in Sub-60mV/dec Germanium Ferroelectric …
W Chung, M Si, PR Shrestha, JP Campbell, KP Cheung, DY Peide
2018 IEEE Symposium on VLSI Technology, 89-90, 2018
322018
Time dependent dielectric breakdown in high quality SiC MOS capacitors
Z Chbili, KP Cheung, JP Campbell, J Chbili, M Lahbabi, DE Ioannou, ...
Materials Science Forum 858, 615-618, 2016
312016
A model for NBTI in nitrided oxide MOSFETs which does not involve hydrogen or diffusion
PM Lenahan, JP Campbell, AT Krishnan, S Krishnan
IEEE Transactions on Device and Materials Reliability 11 (2), 219-226, 2010
282010
Electron spin resonance scanning probe spectroscopy for ultrasensitive biochemical studies
JP Campbell, JT Ryan, PR Shrestha, Z Liu, C Vaz, JH Kim, V Georgiou, ...
Analytical chemistry 87 (9), 4910-4916, 2015
272015
The system can't perform the operation now. Try again later.
Articles 1–20