| Negative- System of Carbon Vacancy in -SiC NT Son, XT Trinh, LS Løvlie, BG Svensson, K Kawahara, J Suda, ... Physical review letters 109 (18), 187603, 2012 | 272 | 2012 |
| Lifetime‐killing defects in 4H‐SiC epilayers and lifetime control by low‐energy electron irradiation T Kimoto, K Danno, J Suda physica status solidi (b) 245 (7), 1327-1336, 2008 | 146 | 2008 |
| Ultrahigh-voltage SiC pin diodes with improved forward characteristics N Kaji, H Niwa, J Suda, T Kimoto IEEE Transactions on Electron Devices 62 (2), 374-381, 2014 | 138 | 2014 |
| Nearly ideal current–voltage characteristics of Schottky barrier diodes formed on hydride-vapor-phase-epitaxy-grown GaN free-standing substrates J Suda, K Yamaji, Y Hayashi, T Kimoto, K Shimoyama, H Namita, ... Applied physics express 3 (10), 101003, 2010 | 138 | 2010 |
| Highly effective activation of Mg-implanted p-type GaN by ultra-high-pressure annealing H Sakurai, M Omori, S Yamada, Y Furukawa, H Suzuki, T Narita, ... Applied Physics Letters 115 (14), 2019 | 130 | 2019 |
| Characterization of stacking faults in 4H-SiC epilayers by room-temperature microphotoluminescence mapping G Feng, J Suda, T Kimoto Applied Physics Letters 92 (22), 2008 | 129 | 2008 |
| Zirconium diboride (0001) as an electrically conductive lattice-matched substrate for gallium nitride H Kinoshita, S Otani, S Kamiyama, H Amano, I Akasaki, J Suda, ... Japanese Journal of Applied Physics 40 (12A), L1280, 2001 | 125 | 2001 |
| 21-kV SiC BJTs with space-modulated junction termination extension H Miyake, T Okuda, H Niwa, T Kimoto, J Suda IEEE Electron Device Letters 33 (11), 1598-1600, 2012 | 123 | 2012 |
| Temperature and doping dependencies of electrical properties in Al-doped 4H-SiC epitaxial layers A Koizumi, J Suda, T Kimoto Journal of Applied Physics 106 (1), 2009 | 121 | 2009 |
| Space-modulated junction termination extension for ultrahigh-voltage pin diodes in 4H-SiC G Feng, J Suda, T Kimoto IEEE transactions on electron devices 59 (2), 414-418, 2011 | 113 | 2011 |
| The temperature dependence of the refractive indices of GaN and AlN from room temperature up to 515 C N Watanabe, T Kimoto, J Suda Journal of Applied Physics 104 (10), 2008 | 111 | 2008 |
| Hall-effect measurements of metalorganic vapor-phase epitaxy-grown p-type homoepitaxial GaN layers with various Mg concentrations M Horita, S Takashima, R Tanaka, H Matsuyama, K Ueno, M Edo, ... Japanese Journal of Applied Physics 56 (3), 031001, 2017 | 103 | 2017 |
| Simulation and experimental study on the junction termination structure for high-voltage 4H-SiC PiN diodes T Hiyoshi, T Hori, J Suda, T Kimoto IEEE Transactions on electron devices 55 (8), 1841-1846, 2008 | 103 | 2008 |
| Interface Properties of 4H-SiC () and () MOS Structures Annealed in NO S Nakazawa, T Okuda, J Suda, T Nakamura, T Kimoto IEEE Transactions on Electron Devices 62 (2), 309-315, 2014 | 93 | 2014 |
| Reduction in potential barrier height of AlGaN∕ GaN heterostructures by SiN passivation N Onojima, M Higashiwaki, J Suda, T Kimoto, T Mimura, T Matsui Journal of applied physics 101 (4), 2007 | 93 | 2007 |
| Design and fabrication of GaN pn junction diodes with negative beveled-mesa termination T Maeda, T Narita, H Ueda, M Kanechika, T Uesugi, T Kachi, T Kimoto, ... IEEE Electron Device Letters 40 (6), 941-944, 2019 | 90 | 2019 |
| Analytical model for reduction of deep levels in SiC by thermal oxidation K Kawahara, J Suda, T Kimoto Journal of Applied Physics 111 (5), 2012 | 89 | 2012 |
| Impacts of recombination at the surface and in the substrate on carrier lifetimes of n-type 4H–SiC epilayers T Kimoto, T Hiyoshi, T Hayashi, J Suda Journal of Applied Physics 108 (8), 2010 | 86 | 2010 |
| 4H‐SiC MISFETs with nitrogen‐containing insulators M Noborio, J Suda, S Beljakowa, M Krieger, T Kimoto physica status solidi (a) 206 (10), 2374-2390, 2009 | 85 | 2009 |
| Impact ionization coefficients in 4H-SiC toward ultrahigh-voltage power devices H Niwa, J Suda, T Kimoto IEEE Transactions on Electron Devices 62 (10), 3326-3333, 2015 | 83 | 2015 |
