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Amir Afshar
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Observation of long-range dipole-dipole interactions in hyperbolic metamaterials
WD Newman, CL Cortes, A Afshar, K Cadien, A Meldrum, R Fedosejevs, ...
Science advances 4 (10), eaar5278, 2018
692018
Abnormal grain growth in alumina dispersion-strengthened copper produced by an internal oxidation process
A Afshar, A Simchi
Scripta Materialia 58 (11), 966-969, 2008
622008
Growth mechanism of atomic layer deposition of zinc oxide: A density functional theory approach
A Afshar, KC Cadien
Applied Physics Letters 103 (25), 2013
522013
Electrical Comparison of and Gate Dielectrics on GaN
KM Bothe, PA von Hauff, A Afshar, A Foroughi-Abari, KC Cadien, ...
IEEE transactions on electron devices 60 (12), 4119-4124, 2013
392013
Flow stress dependence on the grain size in alumina dispersion-strengthened copper with a bimodal grain size distribution
A Afshar, A Simchi
Materials Science and Engineering: A 518 (1-2), 41-46, 2009
382009
Plasmonic materials for metal–insulator–semiconductor–insulator–metal nanoplasmonic waveguides on silicon-on-insulator platform
MP Nielsen, A Ashfar, K Cadien, AY Elezzabi
Optical Materials 36 (2), 294-298, 2013
322013
Fracture behavior dependence on load-bearing capacity of filler in nano-and microcomposites of polypropylene containing calcium carbonate
A Afshar, I Massoumi, RL Khosh, R Bagheri
Materials & Design 31 (2), 802-807, 2010
322010
Schottky barrier source-gated ZnO thin film transistors by low temperature atomic layer deposition
AM Ma, M Gupta, A Afshar, G Shoute, YY Tsui, KC Cadien, DW Barlage
Applied Physics Letters 103 (25), 2013
242013
Sustained hole inversion layer in a wide-bandgap metal-oxide semiconductor with enhanced tunnel current
G Shoute, A Afshar, T Muneshwar, K Cadien, D Barlage
Nature communications 7 (1), 10632, 2016
232016
ZrO2 on GaN metal oxide semiconductor capacitors via plasma assisted atomic layer deposition
P Von Hauff, A Afshar, A Foroughi-Abari, K Bothe, K Cadien, D Barlage
Applied Physics Letters 102 (25), 2013
232013
Capacitance Modeling and Characterization of Planar MOSCAP Devices for Wideband-Gap Semiconductors With High-Dielectrics
KM Bothe, PA von Hauff, A Afshar, A Foroughi-Abari, KC Cadien, ...
IEEE transactions on electron devices 59 (10), 2662-2666, 2012
202012
Performance of nanocrystal ZnO thin-film Schottky contacts on Cu by atomic layer deposition
M Shen, A Afshar, YY Tsui, KC Cadien, DW Barlage
IEEE Transactions on Nanotechnology 16 (1), 135-139, 2016
152016
Interfacial contact effects in top gated zinc oxide thin film transistors grown by atomic layer deposition
AM Ma, M Shen, A Afshar, YY Tsui, KC Cadien, DW Barlage
IEEE Transactions on Electron Devices 63 (9), 3540-3546, 2016
142016
Understanding the effects of a high surface area nanostructured indium tin oxide electrode on organic solar cell performance
B Cao, X He, JB Sorge, A Lalany, K Ahadi, A Afshar, BC Olsen, ...
ACS applied materials & interfaces 9 (44), 38706-38715, 2017
132017
Electrical characteristics of TiW/ZnO Schottky contact with ALD and PLD
M Shen, A Afshar, M Gupta, G Shoute, K Cadien, YY Tsui, D Barlage
MRS Online Proceedings Library (OPL) 1635, 127-132, 2014
92014
High‐mobility solution‐processed zinc oxide thin films on silicon nitride
M Benlamri, KM Bothe, AM Ma, G Shoute, A Afshar, H Sharma, ...
physica status solidi (RRL)–Rapid Research Letters 8 (10), 871-875, 2014
82014
Materials characterization and growth mechanisms of ZnO, ZrO2, and HfO2 deposited by atomic layer deposition
A Afshar
82014
Defect Characterization of PEALD High-k ZrO2 Films Fabricated on III–V Materials
VG Rezazadeh, KM Bothe, A Afshar, KC Cadien, DW Barlage
IEEE Transactions on Semiconductor Manufacturing 29 (4), 355-362, 2016
72016
High Mobility (⁄), High Capacitance (⁄) ZrO2 on GaN Metal Oxide Semiconductor Capacitor via ALD
P von Hauff, K Bothe, A Afshar, A Foroughii, D Barlage, K Cadien
CS MANTEHC Conference, Boston, 2012
62012
Super-Coulombic energy transfer: engineering dipole-dipole interactions with metamaterials
WD Newman, CL Cortes, D Purschke, A Afshar, Z Chen, G De los Reyes, ...
CLEO: QELS_Fundamental Science, FM3C. 1, 2015
52015
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