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E Ray HSIEH
E Ray HSIEH
Dept. of Electrical Engineering, National Central University
Verified email at ncu.edu.tw
Title
Cited by
Cited by
Year
Delay test generation
ER Hsieh, RA Rasmussen, LJ Vidunas, WT Davis
Proceedings of the 14th Design Automation Conference, 486-491, 1977
1751977
Structure and process of basic complementary logic gate made by junctionless transistors
SS Chung, ER Hsieh
US Patent App. 13/064,168, 2012
1482012
High-density multiple bits-per-cell 1T4R RRAM array with gradual SET/RESET and its effectiveness for deep learning
ER Hsieh, M Giordano, B Hodson, A Levy, SK Osekowsky, RM Radway, ...
2019 IEEE International Electron Devices Meeting (IEDM), 35.6. 1-35.6. 4, 2019
502019
Noise in nanoscale semiconductor devices
T Grasser
Springer Nature, 2020
432020
RADAR: A fast and energy-efficient programming technique for multiple bits-per-cell RRAM arrays
BQ Le, A Levy, TF Wu, RM Radway, ER Hsieh, X Zheng, M Nelson, ...
IEEE Transactions on Electron Devices 68 (9), 4397-4403, 2021
342021
Four-bits-per-memory one-transistor-and-eight-resistive-random-access-memory (1T8R) array
ER Hsieh, X Zheng, BQ Le, YC Shih, RM Radway, M Nelson, S Mitra, ...
IEEE Electron Device Letters 42 (3), 335-338, 2021
272021
The proximity of the strain induced effect to improve the electron mobility in a silicon-carbon source-drain structure of n-channel metal-oxide-semiconductor field-effect …
ER Hsieh, SS Chung
Applied Physics Letters 96 (9), 2010
242010
The experimental demonstration of the BTI-induced breakdown path in 28nm high-k metal gate technology CMOS devices
ER Hsieh, PY Lu, SS Chung, KY Chang, CH Liu, JC Ke, CW Yang, ...
2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical …, 2014
212014
The understanding of multi-level RTN in trigate MOSFETs through the 2D profiling of traps and its impact on SRAM performance: A new failure mechanism found
ER Hsieh, YL Tsai, SS Chung, CH Tsai, RM Huang, CT Tsai
2012 International Electron Devices Meeting, 19.2. 1-19.2. 4, 2012
172012
The understanding of the trap induced variation in bulk tri-gate devices by a novel random trap profiling (RTP) technique
HM Tsai, ER Hsieh, SS Chung, CH Tsai, RM Huang, CT Tsai, CW Liang
2012 Symposium on VLSI Technology (VLSIT), 189-190, 2012
152012
A new observation of strain-induced slow traps in advanced CMOS technology with process-induced strain using random telegraph noise measurement
MH Lin, ER Hsieh, SS Chung, CH Tsai, PW Liu, YH Lin, CT Tsai, GH Ma
2009 Symposium on VLSI Technology, 52-53, 2009
152009
An experimental approach to characterizing the channel local temperature induced by self-heating effect in FinFET
ER Hsieh, MR Jiang, JL Lin, SS Chung, TP Chen, SA Huang, TJ Chen, ...
IEEE Journal of the Electron Devices Society 6, 866-874, 2018
142018
New observations on the physical mechanism of Vth-variation in nanoscale CMOS devices after long term stress
ER Hsieh, SS Chung, CH Tsai, RM Huang, CT Tsai, CW Liang
2011 International Reliability Physics Symposium, XT. 9.1-XT. 9.2, 2011
112011
A FORMing-Free HfO2-/HfON-Based Resistive-Gate Metal–Oxide–Semiconductor Field-Effect-Transistor (RG-MOSFET) Nonvolatile Memory With 3-Bit-Per-Cell …
ER Hsieh, KT Chen, PY Chen, SS Wong, SS Chung
IEEE Transactions on Electron Devices 68 (6), 2699-2704, 2021
102021
A 14-nm FinFET logic CMOS process compatible RRAM flash with excellent immunity to sneak path
ER Hsieh, YC Kuo, CH Cheng, JL Kuo, MR Jiang, JL Lin, HW Chen, ...
IEEE Transactions on Electron Devices 64 (12), 4910-4918, 2017
102017
NAND type variable resistance random access memory and methods
SS Chung, ER HSIEH
US Patent 9,548,398, 2017
102017
The demonstration of low-cost and logic process fully-compatible OTP memory on advanced HKMG CMOS with a newly found dielectric fuse breakdown
ER Hsieh, ZH Huang, SS Chung, JC Ke, CW Yang, CT Tsai, TR Yew
2015 IEEE International Electron Devices Meeting (IEDM), 3.4. 1-3.4. 4, 2015
102015
More strain and less stress-the guideline for developing high-end strained CMOS technologies with acceptable reliability
SS Chung, ER Hsieh, DC Huang, CS Lai, CH Tsai, PW Liu, YH Lin, ...
2008 IEEE International Electron Devices Meeting, 1-4, 2008
92008
IEEE International Electron Devices Meeting 2008
SS Chung, ER Hsieh, DC Huang, CS Lai, CH Tsai, PW Liu, YH Lin, ...
Technical Digest, 435-438, 2008
92008
Embedded PUF on 14nm HKMG FinFET platform: A novel 2-bit-per-cell OTP-based memory feasible for IoT secuirty solution in 5G era
ER Hsieh, HW Wang, CH Liu, SS Chung, TP Chen, SA Huang, TJ Chen, ...
2019 Symposium on VLSI Technology, T118-T119, 2019
82019
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