| 850 nm oxide-VCSEL with low relative intensity noise and 40 Gb/s error free data transmission F Tan, MK Wu, M Liu, M Feng, N Holonyak IEEE Photonics Technology Letters 26 (3), 289-292, 2013 | 73 | 2013 |
| Transistor laser with simultaneous electrical and optical output at 20 and 40 Gb/s data rate modulation F Tan, R Bambery, M Feng, N Holonyak Applied Physics Letters 99 (6), 2011 | 50 | 2011 |
| The effect of microcavity laser recombination lifetime on microwave bandwidth and eye-diagram signal integrity CH Wu, F Tan, MK Wu, M Feng, N Holonyak Journal of Applied Physics 109 (5), 2011 | 48 | 2011 |
| Theory of high-energy features in single-particle spectra of hole-doped cuprates F Tan, Y Wan, QH Wang Physical Review B—Condensed Matter and Materials Physics 76 (5), 054505, 2007 | 39 | 2007 |
| Two-Mode Variational Monte Carlo Study of Quasiparticle Excitations<? format?> in Cuprate Superconductors F Tan, QH Wang Physical review letters 100 (11), 117004, 2008 | 32 | 2008 |
| Relative intensity noise of a quantum well transistor laser F Tan, R Bambery, M Feng, N Holonyak Applied Physics Letters 101 (15), 2012 | 31 | 2012 |
| Energy efficient microcavity lasers with 20 and 40 Gb/s data transmission F Tan, CH Wu, M Feng, N Holonyak Applied Physics Letters 98 (19), 2011 | 24 | 2011 |
| Voltage and current modulation at 20 Gb/s of a transistor laser at room temperature R Bambery, F Tan, M Feng, JM Dallesasse, N Holonyak IEEE Photonics Technology Letters 25 (9), 859-862, 2013 | 22 | 2013 |
| Transistor laser optical and electrical linearity enhancement with collector current feedback HW Then, F Tan, M Feng, N Holonyak Applied Physics Letters 100 (22), 2012 | 22 | 2012 |
| The effect of mode spacing on the speed of quantum-well microcavity lasers CH Wu, F Tan, M Feng, N Holonyak Applied Physics Letters 97 (9), 2010 | 19 | 2010 |
| Relative intensity noise in high speed microcavity laser F Tan, MK Wu, M Liu, M Feng, N Holonyak Applied Physics Letters 103 (14), 2013 | 18 | 2013 |
| Selective oxidization cavity confinement for low threshold vertical cavity transistor laser MK Wu, M Liu, F Tan, M Feng, N Holonyak Applied Physics Letters 103 (1), 2013 | 16 | 2013 |
| Single quantum-well transistor lasers operating error-free at 22 Gb/s R Bambery, CY Wang, F Tan, M Feng, N Holonyak IEEE Photonics Technology Letters 27 (6), 600-603, 2015 | 11 | 2015 |
| The effect of ground and first excited state transitions on transistor laser relative intensity noise F Tan, W Xu, X Huang, M Feng, N Holonyak Applied Physics Letters 102 (8), 2013 | 8 | 2013 |
| Effect of microcavity size to the RIN and 40 Gb/s data transmission performance of high speed VCSELs F Tan, MK Wu, C Wang, M Liu, M Feng, N Holonyak CLEO: Science and Innovations, 2015 | 7 | 2015 |
| Transistor laser with 13.5-Gb/s error-free data transmission F Tan, R Bambery, M Feng, N Holonyak IEEE Photonics Technology Letters 26 (15), 1542-1545, 2014 | 7 | 2014 |
| 780 nm oxide-confined VCSEL with 13.5 Gb/s error-free data transmission M Liu, MK Wu, F Tan, R Bambery, M Feng, N Holonyak IEEE Photonics Technology Letters 26 (7), 702-705, 2014 | 6 | 2014 |
| Method And Device For Producing Laser Emission M Feng, N Holonyak Jr, R Bambery, F Tan, MK Wu, M Liu US Patent App. 14/469,132, 2015 | 4 | 2015 |
| Transistor laser electrical and optical bistable switching M Feng, N Holonyak Jr, MK Wu, F Tan US Patent 10,283,933, 2019 | 2 | 2019 |
| Electro-optical hysteresis and bistability in the ring-cavity tunneling-collector transistor laser M Feng, N Holonyak, MK Wu, F Tan Journal of Applied Physics 121 (15), 2017 | 2 | 2017 |
Mong-Kai WuUIUCVerified email at illinois.edu
