| Electric-field induced structural transition in vertical MoTe2- and Mo1–xWxTe2-based resistive memories F Zhang, H Zhang, S Krylyuk, CA Milligan, Y Zhu, DY Zemlyanov, ... Nature Materials 18 (1), 55-61, 2019 | 365 | 2019 |
| Nanoroughened surfaces for efficient capture of circulating tumor cells without using capture antibodies W Chen, S Weng, F Zhang, S Allen, X Li, L Bao, RHW Lam, JA Macoska, ... ACS nano 7 (1), 566-575, 2013 | 261 | 2013 |
| Tunability of Short-Channel Effects in MoS2 Field-Effect Devices F Zhang, A Joerg Nano letters 15 (1), 301-306, 2015 | 95 | 2015 |
| Memory applications from 2D materials CC Chiang, V Ostwal, P Wu, CS Pang, F Zhang, Z Chen, J Appenzeller Applied Physics Reviews 8 (2), 2021 | 61 | 2021 |
| Characterization of Single Defects in Ultrascaled MoS2 Field-Effect Transistors B Stampfer, F Zhang, YY Illarionov, T Knobloch, P Wu, M Waltl, A Grill, ... ACS nano 12 (6), 5368-5375, 2018 | 61 | 2018 |
| Desktop aligner for fabrication of multilayer microfluidic devices X Li, D Geraldo, S Weng, N Alve, W Dun, A Kini, K Patel, R Shu, F Zhang, ... Review of Scientific Instruments 86 (7), 2015 | 56 | 2015 |
| Transition metal dichalcogenide Schottky barrier transistors J Appenzeller, F Zhang, S Das, J Knoch 2D Materials for Nanoelectronics 17, 207-234, 2016 | 36 | 2016 |
| Integrated biochip for label-free and real-time detection of DNA amplification by contactless impedance measurements based on interdigitated electrodes X Fang, Q Jin, F Jing, H Zhang, F Zhang, H Mao, B Xu, J Zhao Biosensors and Bioelectronics 44, 241-247, 2013 | 35 | 2013 |
| Real-time monitoring of strand-displacement DNA amplification by a contactless electrochemical microsystem using interdigitated electrodes X Fang, H Zhang, F Zhang, F Jing, H Mao, Q Jin, J Zhao Lab on a Chip 12 (17), 3190-3196, 2012 | 33 | 2012 |
| Vertical charge transport through transition metal dichalcogenides–a quantitative analysis Y Zhu, R Zhou, F Zhang, J Appenzeller Nanoscale 9 (48), 19108-19113, 2017 | 27 | 2017 |
| An Ultra-fast Multi-level MoTe2-based RRAM F Zhang, H Zhang, PR Shrestha, Y Zhu, K Maize, S Krylyuk, A Shakouri, ... 2018 IEEE International Electron Devices Meeting (IEDM), 22.7. 1-22.7. 4, 2018 | 25 | 2018 |
| Exploration of channel width scaling and edge states in transition metal dichalcogenides F Zhang, CH Lee, JA Robinson, J Appenzeller Nano Research 11 (4), 1768–1774, 2018 | 13 | 2018 |
| 2D materials for nanoelectronics J Appenzeller, F Zhang, S Das, J Knoch 2D Mater. Nanoelectronics 17, 207-234, 2016 | 10 | 2016 |
| Novel two-terminal vertical transition metal dichalcogenide based memory selectors F Zhang, Y Zhu, J Appenzeller Device Research Conference (DRC), 2017 75th Annual, 2017 | 9 | 2017 |
| Phase transition based resistive random-access memory J Appenzeller, F Zhang, Y Zhu, AV Davydov, S Krylyuk, H Zhang, ... US Patent 10,756,263, 2020 | 5 | 2020 |
| Electric field induced semiconductor-to-metal phase transition in vertical MoTe2 and Mo1-xWxTe2 devices F Zhang, S Krylyuk, H Zhang, CA Milligan, DY Zemlyanov, LA Bendersky, ... arXiv preprint arXiv:1709.03835, 2017 | 4 | 2017 |
| Phase transition based resistive random-access memory J Appenzeller, F Zhang, Y Zhu US Patent 10,505,109, 2019 | 2 | 2019 |
| Thickness Tunable Transport Properties inField Effect Transistors Y Zhu, F Zhang, J Appenzeller 2018 76th Device Research Conference (DRC), 1-2, 2018 | 2 | 2018 |
| Phase transition based resistive random-access memory J Appenzeller, F Zhang, Y Zhu, AV Davydov, S Krylyuk, H Zhang, ... US Patent App. 17/002,583, 2020 | | 2020 |
| Transition Metal Dichalcogenide Based Memory Devices and Transistors F Zhang Purdue University, 2019 | | 2019 |
Joerg AppenzellerProfessor of Electrical and Computer Engineering, Purdue UniversityVerified email at purdue.edu
