| Sustained high external quantum efficiency in ultrasmall blue III–nitride micro-LEDs D Hwang, A Mughal, CD Pynn, S Nakamura, SP DenBaars Applied Physics Express 10 (3), 032101, 2017 | 225 | 2017 |
| High-power low-droop violet semipolar (303 1) InGaN/GaN light-emitting diodes with thick active layer design DL Becerra, Y Zhao, SH Oh, CD Pynn, K Fujito, SP DenBaars, ... Applied Physics Letters 105 (17), 2014 | 68 | 2014 |
| Development of high performance green c-plane III-nitride light-emitting diodes AI Alhassan, NG Young, RM Farrell, C Pynn, F Wu, AY Alyamani, ... Optics express 26 (5), 5591-5601, 2018 | 59 | 2018 |
| High wall-plug efficiency blue III-nitride LEDs designed for low current density operation LY Kuritzky, AC Espenlaub, BP Yonkee, CD Pynn, SP DenBaars, ... Optics express 25 (24), 30696-30707, 2017 | 37 | 2017 |
| Using tunnel junctions to grow monolithically integrated optically pumped semipolar III-nitride yellow quantum wells on top of electrically injected blue quantum wells SJ Kowsz, EC Young, BP Yonkee, CD Pynn, RM Farrell, JS Speck, ... Optics Express 25 (4), 3841-3849, 2017 | 20 | 2017 |
| Observation and discussion of avalanche electroluminescence in GaN pn diodes offering a breakdown electric field of 3 MV cm− 1 S Mandal, MB Kanathila, CD Pynn, W Li, J Gao, T Margalith, MA Laurent, ... Semiconductor Science and Technology 33 (6), 065013, 2018 | 19 | 2018 |
| Enhanced light extraction from free-standing InGaN/GaN light emitters using bio-inspired backside surface structuring CD Pynn, L Chan, FL Gonzalez, A Berry, D Hwang, H Wu, T Margalith, ... Optics Express 25 (14), 15778-15785, 2017 | 17 | 2017 |
| Demonstration of phosphor-free polarized white light emission from monolithically integrated semipolar InGaN quantum wells SJ Kowsz, CD Pynn, SH Oh, RM Farrell, JS Speck, SP DenBaars, ... Applied Physics Letters 107 (10), 2015 | 17 | 2015 |
| Stabilization of highly polarized PbTiO 3 nanoscale capacitors due to in-plane symmetry breaking at the interface MAM Polanco, I Grinberg, AM Kolpak, SV Levchenko, C Pynn, AM Rappe Physical Review B 85 (21), 214107, 2012 | 14 | 2012 |
| Waveguide in-coupling using polarized light emitting diodes C Pynn, A Munkholm, HY Lee US Patent 11,175,447, 2021 | 13 | 2021 |
| Green semipolar III-nitride light-emitting diodes grown by limited area epitaxy CD Pynn, SJ Kowsz, SH Oh, H Gardner, RM Farrell, S Nakamura, ... Applied Physics Letters 109 (4), 2016 | 13 | 2016 |
| P—GaN-down micro-LED on semi-polar oriented GaN C Pynn, A Munkholm, D Hwang US Patent 10,923,630, 2021 | 10 | 2021 |
| On the optical polarization properties of semipolar (202¯ 1) and (202¯ 1¯) InGaN/GaN quantum wells C Mounir, IL Koslow, T Wernicke, M Kneissl, LY Kuritzky, NL Adamski, ... Journal of Applied Physics 123 (8), 2018 | 10 | 2018 |
| Using band engineering to tailor the emission spectra of trichromatic semipolar InGaN light-emitting diodes for phosphor-free polarized white light emission SJ Kowsz, CD Pynn, SH Oh, RM Farrell, SP DenBaars, S Nakamura Journal of Applied Physics 120 (3), 2016 | 6 | 2016 |
| Common anode micro-led system architecture M Yee, C Pynn, WP Henry US Patent App. 18/163,112, 2023 | 2 | 2023 |
| III-nitride light emitting diodes with tunnel junctions wafer bonded to a conductive oxide and having optically pumped layers AJ Mughal, SJ Kowsz, RM Farrell, BP Yonkee, EC Young, CD Pynn, ... US Patent 11,411,137, 2022 | 2 | 2022 |
| Lift-off of semipolar blue and green III-nitride LEDs grown on free-standing GaN L Chan, P Shapturenka, CD Pynn, T Margalith, SP DenBaars, MJ Gordon Applied Physics Letters 117 (2), 2020 | 2 | 2020 |
| Carrier confinement in leds by valence band engineering C Pynn, A Tonkikh US Patent App. 17/531,079, 2022 | 1 | 2022 |
| Semipolar (202̅1) III-Nitride P-Down LEDs with in situ anneal to reduce the Mg memory effect C Forman, J Leonard, B Yonkee, C Pynn, T Mates, D Cohen, R Farrell, ... Journal of Crystal Growth 464, 197-200, 2017 | 1 | 2017 |
| Common anode architecture facilitated by p-doping C Pynn, D Massoubre US Patent App. 18/164,591, 2023 | | 2023 |
