| Trap-related frequency dispersion of zero-bias microwave responsivity at low temperature in GaN-based self-switching diodes E Pérez-Martín, T González, D Vaquero, H Sánchez-Martín, C Gaquière, ... Nanotechnology 31 (40), 405204, 2020 | 9 | 2020 |
| Monte Carlo analysis of the influence of surface charges on GaN asymmetric nanochannels: Bias and temperature dependence E Pérez-Martín, I Íñiguez-de-la-Torre, C Gaquière, T González, J Mateos Journal of Applied Physics 130 (10), 104501, 2021 | 5 | 2021 |
| Trap-assisted enhancement of the responsivity in asymmetric planar GaN-based nanodiodes at low temperature E Pérez-Martín, H Sánchez-Martín, T González, J Mateos, ... Nanotechnology 34 (32), 325201, 2023 | 4 | 2023 |
| Analysis of trap states in AlGaN/GaN self-switching diodes via impedance measurements E Pérez-Martín, D Vaquero, H Sánchez-Martín, C Gaquière, VJ Raposo, ... Microelectronics Reliability 114, 113806, 2020 | 3 | 2020 |
| Low temperature memory effects in AlGaN/GaN nanochannels H Sánchez-Martín, E Pérez-Martín, G Paz-Martínez, J Mateos, T González, ... Applied Physics Letters 123 (10), 2023 | 2 | 2023 |
| Current and voltage responsivity up to 110 GHz in GaN asymmetric nano-diodes I Íñiguez-de-la-Torre, E Pérez-Martín, P Artillan, E Rochefeuille, ... Applied Physics Letters 123 (12), 2023 | 1 | 2023 |
| Bias-dependence of surface charge at low temperature in GaN Self-Switching Diodes E Pérez-Martín, I Íñiguez-de-la-Torre, T González, C Gaquière, J Mateos 2021 13th Spanish Conference on Electron Devices (CDE), 90-93, 2021 | | 2021 |
| Analysis of microwave detection with GaN HEMTs under RF probes H Sanchez-Martin, E Perez-Martin, P Altuntas, V Hoel, S Rennesson, ... Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE …, 2018 | | 2018 |
Tomás GonzálezProfessor of Electronics - University of Salamanca (Spain)Verified email at usal.es
