Single-ended Schmitt-trigger-based robust low-power SRAM cell S Ahmad, MK Gupta, N Alam, M Hasan IEEE Transactions on Very Large Scale Integration (VLSI) Systems 24 (8 …, 2016 | 165 | 2016 |
Robust TFET SRAM cell for ultra-low power IoT applications S Ahmad, N Alam, M Hasan AEU-International Journal of Electronics and Communications 89, 70-76, 2018 | 79 | 2018 |
Low leakage fully half-select-free robust SRAM cells with BTI reliability analysis S Ahmad, B Iqbal, N Alam, M Hasan IEEE Transactions on Device and Materials Reliability 18 (3), 337-349, 2018 | 69 | 2018 |
Low Leakage Single Bitline 9 T (SB9T) Static Random Access Memory S Ahmad, MK Gupta, N Alam, M Hasan Microelectronics Journal 62, 1-11, 2017 | 69 | 2017 |
Pseudo differential multi-cell upset immune robust SRAM cell for ultra-low power applications S Ahmad, N Alam, M Hasan AEU-International Journal of Electronics and Communications 83, 366-375, 2018 | 58 | 2018 |
TFET-based robust 7T SRAM cell for low power application S Ahmad, SA Ahmad, M Muqeem, N Alam, M Hasan IEEE transactions on electron devices 66 (9), 3834-3840, 2019 | 41 | 2019 |
A Robust 10T SRAM Cell with Enhanced Read Operation S Ahmad, N Alam, M Hasan International Journal of Computer Applications 129 (2), 7-12, 2015 | 8 | 2015 |
Simulation for performance analysis of grid-connected induction generators with input voltage control FI Bakhsh, S Islam, S Ahmad 2013 Third International Conference on Advanced Computing and Communication …, 2013 | 8 | 2013 |
A Comprehensive Review of Design Challenges and Techniques for Nanoscale SRAM: A Cell Perspective S Ahmad, N Alam, M Hasan, BS Kong TechRxiv. Preprint. https://doi.org/10.36227/techrxiv.21326055.v1, 2022 | 3 | 2022 |
A 9 T SRAM cell with data-independent read bitline leakage and improved read sensing margin for low power applications A Sharif, S Ahmad, N Alam Semiconductor Science and Technology 37 (5), 055001, 2022 | 3 | 2022 |
Soft error hardened symmetric SRAM cell with high read stability S Ahmad, N Alam, M Hasan 2017 International Conference on Multimedia, Signal Processing and …, 2017 | 3 | 2017 |
Low leakage write-enhanced robust 11T SRAM cell with fully half-select-free operation S Ahmad, N Alam, M Hasan 2017 International Conference on Trends in Electronics and Informatics (ICEI …, 2017 | 3 | 2017 |
Comparative Standardization of Roots of Boerhaavia diffusa Linn. From Two Different Geographical Regions AK Gupta, K Kaur, N Alam, S Ahmad, OP Agarwal, P Alam Research journal of pharmacy and technology 5 (1), 114-118, 2012 | 3 | 2012 |
Logic Circuit Implementation for Enabling SRAM Based In Memory Computing M Izhar, S Ahmad, SA Rahman 2022 5th International Conference on Multimedia, Signal Processing and …, 2022 | 2 | 2022 |
Radiation Hardened Area-Efficient 10T SRAM Cell for Space Applications S Ahmad, N Alam, M Hasan 2021 25th International Symposium on VLSI Design and Test (VDAT), 1-6, 2021 | 2 | 2021 |
Compact and Reliable Low Power Non-Volatile TCAM Cell A Shaban, S Ahmad, N Alam, M Hasan 2018 8th International Symposium on Embedded Computing and System Design …, 2018 | 2 | 2018 |
Low-Power Memory Design for IoT-Enabled Systems: Part 1 A Sharif, S Ahmad, N Alam Electrical and Electronic Devices, Circuits and Materials, 43-62, 2021 | 1 | 2021 |
Design of Low Leakage Radiation Hardened 13T SRAM Cell SJ Kidwai, S Ahmad, N Alam 2022 5th International Conference on Multimedia, Signal Processing and …, 2022 | | 2022 |
Compact and Low Power 11T-2MTJ Non-Volatile Ternary Content Addressable Memory Cell with High Sense Margin A Shaban, S Ahmad, N Alam, M Hasan Journal of Low Power Electronics 15 (2), 193-203, 2019 | | 2019 |
Year of Publication: 2015 S Ahmad, N Alam, M Hasan | | 2015 |