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Lisa Porter
Lisa Porter
Professor of Materials Science and Engineering, Carnegie Mellon University
Verified email at andrew.cmu.edu
Title
Cited by
Cited by
Year
A critical review of ohmic and rectifying contacts for silicon carbide
LM Porter, RF Davis
Materials Science and Engineering: B 34 (2-3), 83-105, 1995
5711995
The physics of ohmic contacts to SiC
J Crofton, LM Porter, JR Williams
physica status solidi (b) 202 (1), 581-603, 1997
2901997
High-carbon concentrations at the silicon dioxide–silicon carbide interface identified by electron energy loss spectroscopy
KC Chang, NT Nuhfer, LM Porter, Q Wahab
Applied Physics Letters 77 (14), 2186-2188, 2000
2552000
Observation of a negative electron affinity for boron nitride
MJ Powers, MC Benjamin, LM Porter, RJ Nemanich, RF Davis, JJ Cuomo, ...
Applied physics letters 67 (26), 3912-3914, 1995
2111995
Growth and characterization of α-, β-, and ϵ-phases of Ga2O3 using MOCVD and HVPE techniques
Y Yao, S Okur, LAM Lyle, GS Tompa, T Salagaj, N Sbrockey, RF Davis, ...
Materials Research Letters 6 (5), 268-275, 2018
2042018
Electrical behavior of β-Ga2O3 Schottky diodes with different Schottky metals
Y Yao, R Gangireddy, J Kim, KK Das, RF Davis, LM Porter
Journal of Vacuum Science & Technology B 35 (3), 2017
1652017
Investigation of different metals as ohmic contacts to β-Ga2O3: comparison and analysis of electrical behavior, morphology, and other physical properties
Y Yao, RF Davis, LM Porter
Journal of Electronic Materials 46 (4), 2053-2060, 2017
1212017
Inhomogeneities in Ni∕ 4H-SiC Schottky barriers: Localized Fermi-level pinning by defect states
DJ Ewing, LM Porter, Q Wahab, X Ma, TS Sudharshan, S Tumakha, ...
Journal of applied physics 101 (11), 2007
1042007
JS Bow, MJ Kim, RW Carpenter and RC Glass
LM Porter, RF Davis
J. Mater. Res 10, 668, 1995
941995
Thin Pt films on the polar SrTiO3 (1 1 1) surface: an experimental and theoretical study
A Asthagiri, C Niederberger, AJ Francis, LM Porter, PA Salvador, DS Sholl
Surface science 537 (1-3), 134-152, 2003
752003
Method of forming platinum ohmic contact to p-type silicon carbide
RC Glass, JW Palmour, RF Davis, LS Porter
US Patent 5,409,859, 1995
751995
Si/SiO2 and SiC/SiO2 Interfaces for MOSFETs – Challenges and Advances
ST Pantelides, S Wang, A Franceschetti, R Buczko, M Di Ventra, ...
Materials science forum 527, 935-948, 2006
722006
Si/SiO2 and SiC/SiO2 Interfaces for MOSFETs – Challenges and Advances
ST Pantelides, S Wang, A Franceschetti, R Buczko, M Di Ventra, ...
Materials science forum 527, 935-948, 2006
722006
Chemical and structural analyses of the titanium nitride/alpha (6H)‐silicon carbide interface
RC Glass, LM Spellman, S Tanaka, RF Davis
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 10 (4 …, 1992
721992
High-resolution elemental profiles of the silicon dioxide∕ 4H-silicon carbide interface
KC Chang, Y Cao, LM Porter, J Bentley, S Dhar, LC Feldman, JR Williams
Journal of applied physics 97 (10), 2005
682005
Platinum ohmic contact to p-type silicon carbide
RC Glass, JW Palmour, RF Davis, LS Porter
US Patent 5,323,022, 1994
651994
Electrical, structural, and chemical analysis of silicon carbide-based metal-oxide-semiconductor field-effect-transistors
KC Chang, LM Porter, J Bentley, CY Lu, J Cooper Jr
Journal of applied physics 95 (12), 8252-8257, 2004
642004
Layer-by-layer thermal conductivities of the Group III nitride films in blue/green light emitting diodes
Z Su, L Huang, F Liu, JP Freedman, LM Porter, RF Davis, JA Malen
Applied Physics Letters 100 (20), 2012
632012
Defect-driven inhomogeneities in Ni∕ 4H–SiC Schottky barriers
S Tumakha, DJ Ewing, LM Porter, Q Wahab, X Ma, TS Sudharshan, ...
Applied Physics Letters 87 (24), 2005
612005
Hydrogen passivation of donors and acceptors in SiC
F Gendron, LM Porter, C Porte, E Bringuier
Applied physics letters 67 (9), 1253-1255, 1995
561995
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