| High Aspect Ratio β-Ga2O3 Fin Arrays with Low-Interface Charge Density by Inverse Metal-Assisted Chemical Etching HC Huang, M Kim, X Zhan, K Chabak, JD Kim, A Kvit, D Liu, Z Ma, JM Zuo, ... ACS nano 13 (8), 8784-8792, 2019 | 71 | 2019 |
| Nanoscale groove textured β-Ga2O3 by room temperature inverse metal-assisted chemical etching and photodiodes with enhanced responsivity M Kim, HC Huang, JD Kim, KD Chabak, ARK Kalapala, W Zhou, X Li Applied Physics Letters 113 (22), 2018 | 45 | 2018 |
| β-Ga2O3 FinFETs with ultra-low hysteresis by plasma-free metal-assisted chemical etching HC Huang, Z Ren, AFM Anhar Uddin Bhuiyan, Z Feng, Z Yang, X Luo, ... Applied Physics Letters 121 (5), 2022 | 31 | 2022 |
| Wet etch, dry etch, and MacEtch of β-Ga2O3: A review of characteristics and mechanism HC Huang, Z Ren, C Chan, X Li Journal of Materials Research, 1-15, 2021 | 31 | 2021 |
| Producing silicon carbide micro and nanostructures by plasma‐free metal‐assisted chemical etching JA Michaels, L Janavicius, X Wu, C Chan, HC Huang, S Namiki, M Kim, ... Advanced Functional Materials 31 (32), 2103298, 2021 | 28 | 2021 |
| Hybrid Integration of n-MoS2/p-GaN Diodes by Quasi-van der Waals Epitaxy C Liu, H Huang, W Choi, J Kim, K Jung, W Sun, N Tansu, W Zhou, H Kuo, ... ACS Applied Electronic Materials 2 (2), 419-425, 2020 | 18 | 2020 |
| A Review of Recent Progress in β‐Ga2O3 Epitaxial Growth: Effect of Substrate Orientation and Precursors in Metal–Organic Chemical Vapor Deposition A Waseem, Z Ren, HC Huang, K Nguyen, X Wu, X Li physica status solidi (a) 220 (8), 2200616, 2023 | 12 | 2023 |
| Au-free low-temperature ohmic contacts for AlGaN/AlN/GaN heterostructures X Wang, HC Huang, B Green, X Gao, D Rosenmann, X Li, J Shi Journal of Vacuum Science & Technology B 38 (6), 2020 | 9 | 2020 |
| Temperature dependent characteristics of β-Ga2O3 FinFETs by MacEtch Z Ren, HC Huang, H Lee, C Chan, HC Roberts, X Wu, A Waseem, ... Applied Physics Letters 123 (4), 2023 | 6 | 2023 |
| GeSn N-FinFETs and NiGeSn contact formation by phosphorus implant Y Chuang, HC Huang, JY Li 2017 Silicon Nanoelectronics Workshop (SNW), 97-98, 2017 | 5 | 2017 |
| ACS Nano 13, 8784 (2019) HC Huang, M Kim, X Zhan, K Chabak, JD Kim, A Kvit, D Liu, Z Ma, JM Zuo, ... | 5 | |
| Monolithic lateral p–n junction GaAs nanowire diodes via selective lateral epitaxy W Choi, G Zhang, HC Huang, PK Mohseni, C Zhang, JD Kim, X Li Nanotechnology 32 (50), 505203, 2021 | 2 | 2021 |
| Enhancing Performance of GaAs Photodiodes via Monolithic Integration of Self‐Formed Graphene Quantum Dots and Antireflection Surface Texturing S Namiki, HC Huang, J Soares, X Wu, JD Kim, B Jiang, V Srikumar, X Li Advanced Photonics Research, 2000134, 2020 | 2 | 2020 |
| A novel vertical tunnel FET of band-to-band tunneling aligned with gate electric field with averaged SS of 28 mV/decade PC Shih, HC Huang, CA Wang, JY Li 2017 Silicon Nanoelectronics Workshop (SNW), 49-50, 2017 | 2 | 2017 |
| Elastocapillary Force Induced Alignment of Large Area Planar Nanowires K Jung, W Choi, HC Huang, JD Kim, K Chabak, X Li ACS Applied Materials & Interfaces 13 (9), 11177-11184, 2021 | 1 | 2021 |
| Memory cell with functions of storage element and selector MY Yan, JY Lu, HC Huang, LI Yun-Shiuan, JY Li, IC CHENG, CM Lai, ... US Patent 9,786,842, 2017 | 1 | 2017 |
| -Ga2O3 FinFETs by MacEtch: temperature dependent I-V characteristics Z Ren, HC Huang, H Lee, C Chan, HC Roberts, X Wu, A Wassem, W Zhu, ... 2023 Device Research Conference (DRC), 1-2, 2023 | | 2023 |
| Avoiding Plasma Damage: MacEtch enabled β-Ga2O3 FinFETs for On-Resistance Reduction and Hysteresis Elimination HC Huang, Z Ren, AFMAU Bhuiyan, Z Feng, X Luo, AQ Huang, H Zhao, ... 2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-3, 2023 | | 2023 |
| Etching of β-Ga2O3 HC Huang, X Li Ultrawide Bandgap β-Ga2O3 Semiconductor: Theory and Applications, 9-1-9-18, 2023 | | 2023 |
| Journal Highlights HC Huang, Z Ren, C Chan, X Li MRS BULLETIN 47, 2022 | | 2022 |
