| Electrical and optical characterization of surface passivation in GaAs nanowires CC Chang, CY Chi, M Yao, N Huang, CC Chen, J Theiss, AW Bushmaker, ... Nano letters 12 (9), 4484-4489, 2012 | 180 | 2012 |
| Observation of single event upsets in analog microcircuits R Koga, SD Pinkerton, SC Moss, DC Mayer, S LaLumondiere, SJ Hansel, ... IEEE transactions on nuclear science 40 (6), 1838-1844, 1993 | 141 | 1993 |
| Observation of single event upsets in analog microcircuits R Koga, SD Pinkerton, SC Moss, DC Mayer, S LaLumondiere, SJ Hansel, ... IEEE transactions on nuclear science 40 (6), 1838-1844, 1993 | 141 | 1993 |
| Correlation of picosecond laser-induced latchup and energetic particle-induced latchup in CMOS test structures SC Moss, SD LaLumondiere, JR Scarpulla, KP MacWilliams, WR Crain, ... IEEE Transactions on Nuclear Science 42 (6), 1948-1956, 1995 | 96 | 1995 |
| Single event upset (SEU) sensitivity dependence of linear integrated circuits (ICs) on bias conditions R Koga, SH Penzin, KB Crawford, WR Crain, SC Moss, SD Pinkerton, ... IEEE Transactions on Nuclear Science 44 (6), 2325-2332, 1997 | 82 | 1997 |
| Comparison of SETs in bipolar linear circuits generated with an ion microbeam, laser light, and circuit simulation RL Pease, AL Sternberg, Y Boulghassoul, LW Massengill, S Buchner, ... IEEE Transactions on Nuclear Science 49 (6), 3163-3170, 2002 | 68 | 2002 |
| SEU-hardened storage cell validation using a pulsed laser R Velazco, T Calin, M Nicolaidis, SC Moss, SD LaLumondiere, VT Tran, ... IEEE Transactions on Nuclear Science 43 (6), 2843-2848, 1996 | 65 | 1996 |
| Laser-induced and heavy ion-induced single-event transient (SET) sensitivity measurements on 139-type comparators SD LaLumondiere, R Koga, P Yu, MC Maher, SC Moss IEEE Transactions on Nuclear Science 49 (6), 3121-3128, 2002 | 35 | 2002 |
| Single event transient (SET) sensitivity of radiation hardened and COTS voltage comparators R Koga, SH Crain, KB Crawford, SC Moss, SD LaLumondiere, ... 2000 IEEE Radiation Effects Data Workshop. Workshop Record. Held in …, 2000 | 35 | 2000 |
| Narrow band gap (1 eV) InGaAsSbN solar cells grown by metalorganic vapor phase epitaxy TW Kim, TJ Garrod, K Kim, JJ Lee, SD LaLumondiere, Y Sin, WT Lotshaw, ... Applied Physics Letters 100 (12), 121120, 2012 | 31 | 2012 |
| Catastrophic latchup in CMOS analog-to-digital converters TF Miyahira, AH Johnston, HN Becker, SD LaLumondiere, SC Moss IEEE Transactions on Nuclear Science 48 (6), 1833-1840, 2001 | 31 | 2001 |
| A TID and SEE radiation-hardened, wideband, low-noise amplifier B Mossawir, IR Linscott, US Inan, JL Roeder, JV Osborn, SC Witczak, ... IEEE transactions on nuclear science 53 (6), 3439-3448, 2006 | 22 | 2006 |
| LEO to ground optical communications from a small satellite platform TS Rose, SW Janson, S LaLumondiere, N Werner, DH Hinkley, ... Free-Space Laser Communication and Atmospheric Propagation XXVII 9354, 93540I, 2015 | 21 | 2015 |
| Topology-related upset mechanisms in design hardened storage cells T Calin, R Velazco, M Nicolaidis, S Moss, SD LaLumondiere, VT Tran, ... RADECS 97. Fourth European Conference on Radiation and its Effects on …, 1997 | 20 | 1997 |
| Single event latchup characteristics of three commercial CMOS processes JV Osborn, DC Mayer, RC Lacoe, SC Moss, SD La Lumondiere Proceedings of 7th NASA Symp. on VLSI design, 1998 | 19 | 1998 |
| Physics of failure investigation in high-power broad-area InGaAs-AlGaAs strained quantum well lasers Y Sin, SD LaLumondiere, N Presser, BJ Foran, NA Ives, WT Lotshaw, ... High-Power Diode Laser Technology and Applications X 8241, 824116, 2012 | 18 | 2012 |
| Catastrophic optical bulk damage (COBD) in high power multi-mode InGaAs-AlGaAs strained quantum well lasers Y Sin, N Ives, S LaLumondiere, N Presser, SC Moss High-Power Diode Laser Technology and Applications IX 7918, 791803, 2011 | 17 | 2011 |
| Impact of thermal annealing on bulk InGaAsSbN materials grown by metalorganic vapor phase epitaxy TW Kim, K Kim, JJ Lee, TF Kuech, LJ Mawst, NP Wells, SD LaLumondiere, ... Applied Physics Letters 104 (5), 051915, 2014 | 15 | 2014 |
| Properties of ‘bulk’GaAsSbN/GaAs for multi-junction solar cell application: Reduction of carbon background concentration TW Kim, K Forghani, LJ Mawst, TF Kuech, SD LaLumondiere, Y Sin, ... Journal of Crystal Growth 393, 70-74, 2014 | 14 | 2014 |
| Single event transients induced by picosecond pulsed X-ray absorption in III–V heterojunction transistors DM Cardoza, SD LaLumondiere, MA Tockstein, SC Witczak, Y Sin, ... IEEE Transactions on Nuclear Science 59 (6), 2729-2738, 2012 | 14 | 2012 |
