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Mohammad Wahidur Rahman, Ph.D.
Mohammad Wahidur Rahman, Ph.D.
Power Device Engineer, Wolfspeed
Verified email at wolfspeed.com
Title
Cited by
Cited by
Year
Linearity Improvement With AlGaN Polarization- Graded Field Effect Transistors With Low Pressure Chemical Vapor Deposition Grown SiNx Passivation
SH Sohel, MW Rahman, A Xie, E Beam, Y Cui, M Kruzich, H Xue, ...
IEEE Electron Device Letters 41 (1), 19-22, 2019
472019
BaTiO3/Al0.58Ga0.42N lateral heterojunction diodes with breakdown field exceeding 8 MV/cm
T Razzak, H Chandrasekar, K Hussain, CH Lee, A Mamun, H Xue, Z Xia, ...
Applied Physics Letters 116 (2), 023507, 2020
272020
Design and Fabrication of Vertical GaN pn Diode With Step-Etched Triple-Zone Junction Termination Extension
HS Lee, Y Zhang, Z Chen, MW Rahman, H Zhao, S Rajan
IEEE Transactions on Electron Devices 67 (9), 3553-3557, 2020
242020
Planar and three-dimensional damage-free etching of β-Ga2O3 using atomic gallium flux
NK Kalarickal, A Fiedler, S Dhara, HL Huang, AFM Bhuiyan, MW Rahman, ...
Applied Physics Letters 119 (12), 2021
222021
Prospect of decentralized hybrid power generation in Bangladesh using biomass, solar PV & wind
MW Rahman, MS Hossain, A Aziz, FM Mohammedy
2014 3rd International Conference on the Developments in Renewable Energy …, 2014
222014
Integration of high permittivity BaTiO3 with AlGaN/GaN for near-theoretical breakdown field kV-class transistors
MW Rahman, NK Kalarickal, H Lee, T Razzak, S Rajan
Applied Physics Letters 119 (19), 2021
182021
Breakdown Voltage Enhancement in ScAlN/GaN High-Electron-Mobility Transistors by High-k Bismuth Zinc Niobate Oxide
J Cheng, MW Rahman, A Xie, H Xue, SH Sohel, E Beam, C Lee, H Yang, ...
IEEE Transactions on Electron Devices 68 (7), 3333-3338, 2021
162021
High-permittivity dielectric edge termination for vertical high voltage devices
HS Lee, NK Kalarickal, MW Rahman, Z Xia, W Moore, C Wang, S Rajan
Journal of Computational Electronics 19, 1538-1545, 2020
112020
Hybrid BaTiO3/SiNx/AlGaN/GaN lateral Schottky barrier diodes with low turn-on and high breakdown performance
MW Rahman, H Chandrasekar, T Razzak, H Lee, S Rajan
Applied Physics Letters 119 (1), 013504, 2021
102021
Numerical analysis of CdS:O/CdTe thin film solar cell using Cu2Te BSF layer
MW Rahman, SI Rahman, SN Ahmed, MA Hoque
2016 9th International Conference on Electrical and Computer Engineering …, 2016
102016
Numerical analysis of CdTe thin film solar cells with CdS: O window layer and ZnO buffer layer
MW Rahman, SN Ahmed, SI Rahman, MA Hoque
2016 International Conference on Advances in Electrical, Electronic and …, 2016
92016
Prospect of biogas & biomass as potential sources of renewable energy in Bangladesh
MS Hossain, MW Rahman, A Aziz, FM Mohammedy
2012 International Conference on Informatics, Electronics & Vision (ICIEV …, 2012
62012
Local electric field measurement in GaN diodes by exciton Franz–Keldysh photocurrent spectroscopy
D Verma, MMR Adnan, MW Rahman, S Rajan, RC Myers
Applied Physics Letters 116, 202102, 2020
52020
Numerical Analysis of CZTS Solar Cell with In2S3 Buffer Layer
S Mohammad, MN Tousif, AA Ferdous, MA Hoque, MW Rahman
2017 IEEE International Conference on Smart Grid and Smart Cities (ICSGSC …, 2017
52017
Characterization of electrodeposited multiwall carbon nanotube films on silicon substrates
MW Rahman, MA Uddin, A Aziz, T Mustofa, ZH Mahmood, T Soga, ...
8th International Conference on Electrical and Computer Engineering, 373-376, 2014
42014
Numerical analysis of stacked layered CZTS and CZTSe-based thin film solar cell
MW Rahman, SM Abdullah, MA Bakth, QNU Islam, MA Hoque
2017 International Conference on Electrical, Computer and Communication …, 2017
32017
Effect of gate dielectric on ballistic transport of cylindrical carbon nanotube MOSFET
MS Hossain, SUZ Khan, A Aziz, MW Rahman, MA Arafat
ECS Transactions 53 (1), 139, 2013
32013
Effect of temperature on ballistic transport of cylindrical (10, 0) CNTFET
MS Hossain, SUZ Khan, A Aziz, MW Rahman
2013 IEEE International Conference of Electron Devices and Solid-state …, 2013
22013
Selectively patterned Mg-doped GaN by SiNx-driven hydrogen injection
HS Lee, MW Rahman, D Verma, VM Poole, RC Myers, MD McCluskey, ...
Journal of Vacuum Science & Technology B 40 (6), 2022
12022
Demonstration of BaTiO3 Integrated kV-class AlGaN/GaN Schottky Barrier Diodes with Record Average Breakdown Electric Field
MW Rahman, C Joishi, NK Kalarickal, H Lee, S Rajan
2022 IEEE 34th International Symposium on Power Semiconductor Devices and …, 2022
12022
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