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Levon V. Asryan
Levon V. Asryan
Professor
Verified email at vt.edu - Homepage
Title
Cited by
Cited by
Year
Inhomogeneous line broadening and the threshold current density of a semiconductor quantum dot laser
LV Asryan, RA Suris
Semiconductor Science and Technology 11 (4), 554, 1996
4281996
Tunneling-injection quantum-dot laser: ultrahigh temperature stability
LV Asryan, S Luryi
IEEE Journal of Quantum Electronics 37 (7), 905-910, 2001
1552001
Threshold characteristics of InGaAsP/InP multiple quantum well lasers
LV Asryan, NA Gun'Ko, AS Polkovnikov, GG Zegrya, RA Suris, PK Lau, ...
Semiconductor science and technology 15 (12), 1131, 2000
1302000
High-power continuous-wave operation of a InGaAs/AlGaAs quantum dot laser
MV Maximov, YM Shernyakov, AF Tsatsul’nikov, AV Lunev, AV Sakharov, ...
Journal of applied physics 83 (10), 5561-5563, 1998
1241998
Temperature dependence of the threshold current density of a quantum dot laser
LV Asryan, RA Suris
IEEE Journal of quantum electronics 34 (5), 841-850, 1998
1231998
Gain and threshold characteristics of long wavelength lasers based on InAs/GaAs quantum dots formed by activated alloy phase separation
MV Maximov, LV Asryan, YM Shernyakov, AF Tsatsul'Nikov, IN Kaiander, ...
IEEE journal of quantum electronics 37 (5), 676-683, 2001
1052001
Charge neutrality violation in quantum-dot lasers
LV Asryan, RA Suris
IEEE Journal of Selected Topics in Quantum Electronics 3 (2), 148-157, 1997
1051997
Temperature-insensitive semiconductor quantum dot laser
LV Asryan, S Luryi
Solid-State Electronics 47 (2), 205-212, 2003
1042003
Internal efficiency of semiconductor lasers with a quantum-confined active region
LV Asryan, S Luryi, RA Suris
IEEE journal of quantum electronics 39 (3), 404-418, 2003
952003
Maximum modal gain of a self-assembled InAs/GaAs quantum-dot laser
LV Asryan, M Grundmann, NN Ledentsov, O Stier, RA Suris, D Bimberg
Journal of Applied Physics 90 (3), 1666-1668, 2001
882001
Effect of excited-state transitions on the threshold characteristics of a quantum dot laser
LV Asryan, M Grundmann, NN Ledentsov, O Stier, RA Suris, D Bimberg
IEEE journal of quantum electronics 37 (3), 418-425, 2001
792001
Intrinsic nonlinearity of the light–current characteristic of semiconductor lasers with a quantum-confined active region
LV Asryan, S Luryi, RA Suris
Applied physics letters 81 (12), 2154-2156, 2002
732002
Effect of internal optical loss on threshold characteristics of semiconductor lasers with a quantum-confined active region
LV Asryan, S Luryi
IEEE journal of quantum electronics 40 (7), 833-843, 2004
722004
Semiconductor laser with reduced temperature sensitivity
LV Asryan, S Luryi
US Patent 6,870,178, 2005
672005
Theory of threshold characteristics of semiconductor quantum dot lasers
LV Asryan, RA Suris
Semiconductors 38, 1-22, 2004
652004
Longitudinal spatial hole burning in a quantum-dot laser
LV Asryan, RA Suris
IEEE journal of quantum electronics 36 (10), 1151-1160, 2000
592000
Two lasing thresholds in semiconductor lasers with a quantum-confined active region
LV Asryan, S Luryi
Applied physics letters 83 (26), 5368-5370, 2003
522003
Characteristic temperature of quantum dot laser
LV Asryan, RA Suris
Electronics Letters 33 (22), 1871-1872, 1997
521997
Optical power of semiconductor lasers with a low-dimensional active region
LV Asryan, ZN Sokolova
Journal of Applied Physics 115 (2), 2014
502014
Improvement of temperature-stability in a quantum well laser with asymmetric barrier layers
AE Zhukov, NV Kryzhanovskaya, FI Zubov, YM Shernyakov, MV Maximov, ...
Applied Physics Letters 100 (2), 2012
482012
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