| Temperature dependence of soft-error rates for FF designs in 20-nm bulk planar and 16-nm bulk FinFET technologies H Zhang, H Jiang, TR Assis, DR Ball, K Ni, JS Kauppila, RD Schrimpf, ... 2016 IEEE International Reliability Physics Symposium (IRPS), 5C-3-1-5C-3-5, 2016 | 21 | 2016 |
| Angular effects of heavy-ion strikes on single-event upset response of flip-flop designs in 16-nm bulk FinFET technology H Zhang, H Jiang, TR Assis, DR Ball, B Narasimham, A Anvar, ... IEEE Transactions on Nuclear Science 64 (1), 491-496, 2016 | 14 | 2016 |
| Effects of threshold voltage variations on single-event upset response of sequential circuits at advanced technology nodes H Zhang, H Jiang, TR Assis, NN Mahatme, B Narasimham, LW Massengill, ... IEEE Transactions on Nuclear Science 64 (1), 457-463, 2016 | 14 | 2016 |
| An empirical model for predicting SE cross section for combinational logic circuits in advanced technologies H Jiang, H Zhang, JS Kauppila, LW Massengill, BL Bhuva IEEE Transactions on Nuclear Science 65 (1), 304-310, 2017 | 7 | 2017 |
| SE performance of a Schmitt-trigger-based D-flip-flop design in a 16-nm bulk FinFET CMOS process H Jiang, H Zhang, DR Ball, LW Massengill, BL Bhuva, TR Assis, ... 2016 IEEE International Reliability Physics Symposium (IRPS), 3B-2-1-3B-2-6, 2016 | 6 | 2016 |
| Effects of temperature and supply voltage on SEU-and SET-induced errors in bulk 40-nm sequential circuits RM Chen, ZJ Diggins, NN Mahatme, L Wang, EX Zhang, YP Chen, ... IEEE Transactions on Nuclear Science 64 (8), 2122-2128, 2017 | 5 | 2017 |
| Extracellular tau oligomers produce an immediate impairment of LTP and memory. Sci. Rep. 6, 19393 M Fá, D Puzzo, R Piacentini, A Staniszewski, H Zhang, MA Baltrons, ... | 4 | 2016 |
| Effects of Total-Ionizing-Dose Irradiation on Single-Event Response for Flip-Flop Designs at a 14-/16-nm Bulk FinFET Technology Node H Zhang, H Jiang, X Fan, JS Kauppila, I Chatterjee, BL Bhuva, ... IEEE Transactions on Nuclear Science 65 (8), 1928-1934, 2017 | 3 | 2017 |
| Thermal neutron-induced soft-error rates for flip-flop designs in 16-nm bulk FinFET technology H Zhang, H Jiang, JD Brockman, TR Assis, X Fan, BL Bhuva, ... 2017 IEEE International Reliability Physics Symposium (IRPS), 3D-3.1-3D-3.4, 2017 | 3 | 2017 |
| Evaluation on flip-flop physical unclonable functions in a 14/16-nm bulk FinFET technology H Zhang, H Jiang, MR Eaker, KJ Lezon, B Narasimham, NN Mahatme, ... 2018 IEEE International Reliability Physics Symposium (IRPS), P-PR. 1-1-P-PR …, 2018 | 1 | 2018 |
| Impact of Designer-controlled Parameters on Single-event Responses for Flip-flop Designs in Advanced Technologies H Zhang Vanderbilt University, 2018 | 1 | 2018 |
| Frequency dependence of heavy-ion-induced single-event responses of flip-flops in a 16-nm bulk FinFET technology H Zhang, H Jiang, BL Bhuva, JS Kauppila, WT Holman, LW Massengill IEEE Transactions on Nuclear Science 65 (1), 413-417, 2017 | 1 | 2017 |
| Single-event performance of sense-amplifier based flip-flop design in a 16-nm Bulk FinFET CMOS Process H Jiang, H Zhang, TR Assis, B Narasimham, BL Bhuva, WT Holman, ... IEEE Transactions on Nuclear Science 64 (1), 477-482, 2016 | 1 | 2016 |
| Single-event upset responses of dual-and triple-well designs at advanced planar and FinFET technologies H Zhang, H Jiang, TR Assis, DR Ball, I Chatterjee, B Narasimham, ... 2016 16th European Conference on Radiation and Its Effects on Components and …, 2016 | 1 | 2016 |
| 14/16 nm FinFET radiation response characterization JS Kauppila, H Jiang, H Zhang, T Assis, TD Loveless, T Haeffner, ... Proc. Government Microcircuit Appl. Critical Technol. Conf., 307-310, 2016 | 1 | 2016 |
| Power-Aware SE Analysis of Different FF Designs at the 14-/16-nm Bulk FinFET CMOS Technology Node H Jiang, H Zhang, I Chatterjee, JS Kauppila, BL Bhuva, LW Massengill IEEE Transactions on Nuclear Science 65 (8), 1866-1871, 2018 | | 2018 |
| Impact of supply voltage and particle LET on the soft error rate of logic circuits H Jiang, H Zhang, RC Harrington, JA Maharrey, JS Kauppila, ... 2018 IEEE International Reliability Physics Symposium (IRPS), 4C. 4-1-4C. 4-4, 2018 | | 2018 |
| Designing soft-error-aware circuits with power and speed optimization H Jiang, H Zhang, B Narasimham, LW Massengill, BL Bhuva 2018 IEEE International Reliability Physics Symposium (IRPS), P-SE. 5-1-P-SE …, 2018 | | 2018 |
| Impact of particle LET on combinational logic single-event effects for advanced technologies H Jiang, H Zhang, NN Mahatme, I Chatterjee, TR Assis, JS Kauppila, ... 2016 16th European Conference on Radiation and Its Effects on Components and …, 2016 | | 2016 |
