| InN: A material with photovoltaic promise and challenges E Trybus, G Namkoong, W Henderson, S Burnham, WA Doolittle, ... Journal of Crystal Growth 288 (2), 218-224, 2006 | 109 | 2006 |
| Transient atomic behavior and surface kinetics of GaN M Moseley, D Billingsley, W Henderson, E Trybus, WA Doolittle Journal of Applied Physics 106 (1), 2009 | 54 | 2009 |
| Molecular beam epitaxy of complex metal-oxides: Where have we come, where are we going, and how are we going to get there? WA Doolittle, AG Carver, W Henderson Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2005 | 52 | 2005 |
| III-nitride integration on ferroelectric materials of lithium niobate by molecular beam epitaxy G Namkoong, KK Lee, SM Madison, W Henderson, SE Ralph, ... Applied Physics Letters 87 (17), 2005 | 50 | 2005 |
| Extremely high hole concentrations in c‐plane GaN E Trybus, WA Doolittle, M Moseley, W Henderson, D Billingsley, ... physica status solidi c 6 (S2 2), S788-S791, 2009 | 39 | 2009 |
| Spatially resolved 3D metabolomic profiling in tissues S Ganesh, T Hu, E Woods, M Allam, S Cai, W Henderson, AF Coskun Science advances 7 (5), eabd0957, 2021 | 33 | 2021 |
| Metal oxide structures, devices, and fabrication methods WA Doolittle, AG Carver, W Henderson US Patent App. 13/380,589, 2012 | 31 | 2012 |
| Halide based MBE of crystalline metals and oxides JD Greenlee, WL Calley, W Henderson, WA Doolittle physica status solidi c 9 (2), 155-160, 2012 | 29 | 2012 |
| Strain relaxation via formation of cracks in compositionally modulated two-dimensional semiconductor alloys H Taghinejad, AA Eftekhar, PM Campbell, B Beatty, M Taghinejad, ... npj 2D Materials and Applications 2 (1), 10, 2018 | 27 | 2018 |
| Closed‐loop MBE growth of droplet‐free GaN with very metal rich conditions using Metal Modulated Epitaxy with Mg and In SD Burnham, W Henderson, WA Doolittle physica status solidi c 5 (6), 1855-1858, 2008 | 25 | 2008 |
| Mg doped GaN using a valved, thermally energetic source: enhanced incorporation, and control SD Burnham, G Namkoong, W Henderson, WA Doolittle Journal of crystal growth 279 (1-2), 26-30, 2005 | 25 | 2005 |
| A versatile metal-halide vapor chemistry for the epitaxial growth of metallic, insulating and semiconducting films WE Henderson, WL Calley, AG Carver, H Chen, WA Doolittle Journal of crystal growth 324 (1), 134-141, 2011 | 22 | 2011 |
| Growth of InN on Ge substrate by molecular beam epitaxy E Trybus, G Namkoong, W Henderson, WA Doolittle, R Liu, J Mei, ... Journal of crystal growth 279 (3-4), 311-315, 2005 | 22 | 2005 |
| Growth and optical properties of GaAsSb quantum wells for 1.3 μm VCSELs JE Cunningham, M Dinu, J Shah, F Quochi, D Kilper, WY Jan, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2001 | 16 | 2001 |
| Complementary oxide memristor technology facilitating both inhibitory and excitatory synapses for potential neuromorphic computing applications WA Doolittle, WL Calley, W Henderson 2009 International Semiconductor Device Research Symposium, 1-2, 2009 | 14 | 2009 |
| Influence of growth conditions and surface reaction byproducts on GaN grown via metal organic molecular beam epitaxy: Toward an understanding of surface reaction chemistry D Pritchett, W Henderson, SD Burnham, WA Doolittle Journal of electronic materials 35, 562-567, 2006 | 11 | 2006 |
| Mg doped GaN using a valved, thermally energetic source: enhanced incorporation, control and quantitative optimization SD Burnham, WA Doolittle, G Namkoong, W Henderson MRS Online Proceedings Library (OPL) 798, Y8. 11, 2003 | 11 | 2003 |
| III-nitride growth on lithium niobate: A new substrate material for polarity engineering in III-nitride heteroepitaxy WA Doolittle, G Namkoong, A Carver, W Henderson, D Jundt, AS Brown MRS Online Proceedings Library 743, L1. 4.1-L1. 4.6, 2002 | 11 | 2002 |
| Growth and characterization of AlxGa1− xN via NH3-based metal-organic molecular beam epitaxy D Billingsley, W Henderson, D Pritchett, WA Doolittle Journal of crystal growth 311 (5), 1328-1332, 2009 | 8 | 2009 |
| A mechanistic study of the interaction of water-soluble borate glass with apatite-bound heterocyclic nitrogen-containing bisphosphonates C Pramanik, P Sood, L Niu, H Yuan, S Ghoshal, W Henderson, Y Liu, ... Acta biomaterialia 31, 339-347, 2016 | 6 | 2016 |
William Alan DoolittleGeorgia Institute of TechnologyVerified email at ece.gatech.edu
