| Vertical Si-Nanowire-Type Tunneling FETs With Low Subthreshold Swing () at Room Temperature R Gandhi, Z Chen, N Singh, K Banerjee, S Lee IEEE Electron Device Letters 32 (4), 437-439, 2011 | 401 | 2011 |
| CMOS-Compatible Vertical-Silicon-Nanowire Gate-All-Around p-Type Tunneling FETs With -mV/decade Subthreshold Swing R Gandhi, Z Chen, N Singh, K Banerjee, S Lee IEEE Electron Device Letters 32 (11), 1504-1506, 2011 | 216 | 2011 |
| Ferroelectric Devices and Methods of Forming Ferroelectric Devices DVNR Ashonita A. Chavan, Ramanathan Gandhi, Beth R. Cook US Patent 20,170,345,831, 2017 | 72* | 2017 |
| Vertical silicon nanowire platform for low power electronics and clean energy applications DL Kwong, X Li, Y Sun, G Ramanathan, ZX Chen, SM Wong, Y Li, ... Journal of Nanotechnology 2012, 2012 | 57 | 2012 |
| Hydraulic transport of solids RA Hill, PE Snock, RL Gandhi The pump handbook. 2nd ed. New York: McGraw-Hill, 1986 | 6 | 1986 |
| Semiconductor devices, transistors, and related methods for contacting metal oxide semiconductor devices DVN Ramaswamy, R Gandhi, SE Sills US Patent 11,335,788, 2022 | 4 | 2022 |
| Transistors including heterogeneous channels SE Sills, R Gandhi, DVN Ramaswamy, YF Lee, KM Karda US Patent 11,515,417, 2022 | 3 | 2022 |
| Vertical Nanowire Gate-All-Around p-type Tunneling Field-Effect Transistor With Si0. 8Ge0. 2/Si Heterojunction A Soundarapandian, R Gandhi, Z Chen, X Li, NSS Lee International Conference on Solid-tate and Integrated Circuit 32, 2012 | 3 | 2012 |
| Intermediate layer thickness dependence on switching field distribution in perpendicular recording media R Sbiaa, R Gandhi, K Srinivasan, SN Piramanayagam, RM Seoh Journal of magnetism and magnetic materials 321 (17), 2682-2684, 2009 | 3 | 2009 |
| Microelectronic devices with channel sub-regions of differing microstructures, and related methods and systems R Gandhi, SM Poh, D Mikulik, DH Eom, HAN Moonhyeong, ... US Patent App. 17/379,338, 2023 | 2 | 2023 |
| Assemblies which include ruthenium-containing conductive gates R Gandhi US Patent 10,964,793, 2021 | 2 | 2021 |
| Influence of SF6/N2 Gas Mixture Ratios on the Lightning Streamer Propagation Characteristics of 22 kV MV Circuit Breaker R Gandhi, S Chandrasekar, C Nagarajan Journal of Electrical Engineering and Technology 13 (4), 1663-1672, 2018 | 2 | 2018 |
| Ferroelectric Devices and Methods of Forming Ferroelectric Devices AA Chavan, R Gandhi, BR Cook, DVN Ramaswamy US Patent App. 16/834,666, 2020 | 1 | 2020 |
| Elevationally-extending transistors, devices comprising elevationally-extending transistors, and methods of forming a device comprising elevationally-extending transistors SE Sills, KD Prall, DVN Ramaswamy, R Gandhi US Patent 10,629,732, 2020 | 1 | 2020 |
| Memory Cell And Method Used In Forming A Memory Cells V Sriraman, DH Eom, R Gandhi, LI Donghua, AK Muthukumaran US Patent App. 18/506,889, 2024 | | 2024 |
| Integrated Assemblies Comprising Hydrogen Diffused Within Two or More Different Semiconductor Materials, and Methods of Forming Integrated Assemblies KM Karda, YF Lee, H Liu, DVN Ramaswamy, R Gandhi, K Sarpatwari, ... US Patent App. 18/387,921, 2024 | | 2024 |
| Semiconductor devices, transistors, and related methods for contacting metal oxide semiconductor devices DVN Ramaswamy, R Gandhi, SE Sills US Patent 11,908,913, 2024 | | 2024 |
| Memory cell having programmable material comprising at least two regions comprising SiNx V Sriraman, DH Eom, R Gandhi, LI Donghua, AK Muthukumaran US Patent 11,856,766, 2023 | | 2023 |
| Integrated assemblies comprising hydrogen diffused within two or more different semiconductor materials, and methods of forming integrated assemblies KM Karda, YF Lee, H Liu, DVN Ramaswamy, R Gandhi, K Sarpatwari, ... US Patent 11,832,454, 2023 | | 2023 |
| Assemblies Which Include Ruthenium-Containing Conductive Gates R Gandhi US Patent App. 18/140,757, 2023 | | 2023 |
Navab SinghInstitute of MicroelectronicsVerified email at ime.a-star.edu.sg
