| Sustained high external quantum efficiency in ultrasmall blue III–nitride micro-LEDs D Hwang, A Mughal, CD Pynn, S Nakamura, SP DenBaars Applied Physics Express 10 (3), 032101, 2017 | 224 | 2017 |
| High luminous efficacy green light-emitting diodes with AlGaN cap layer AI Alhassan, RM Farrell, B Saifaddin, A Mughal, F Wu, SP DenBaars, ... Optics express 24 (16), 17868-17873, 2016 | 101 | 2016 |
| Micro-light-emitting diodes with III–nitride tunnel junction contacts grown by metalorganic chemical vapor deposition D Hwang, AJ Mughal, MS Wong, AI Alhassan, S Nakamura, SP DenBaars Applied Physics Express 11 (1), 012102, 2017 | 75 | 2017 |
| Efficient semipolar (11–22) 550 nm yellow/green ingan light-emitting diodes on low defect density (11–22) GaN/sapphire templates H Li, M Khoury, B Bonef, AI Alhassan, AJ Mughal, E Azimah, ... ACS applied materials & interfaces 9 (41), 36417-36422, 2017 | 53 | 2017 |
| Effect of substrate on the growth and properties of MoS2 thin films grown by plasma-enhanced atomic layer deposition AJ Mughal, TN Walter, KA Cooley, A Bertuch, SE Mohney Journal of Vacuum Science & Technology A 37 (1), 2019 | 24 | 2019 |
| High‐power LEDs using Ga‐doped ZnO current‐spreading layers AJ Mughal, S Oh, A Myzaferi, S Nakamura, JS Speck, SP DenBaars Electronics Letters 52 (4), 304-306, 2016 | 18 | 2016 |
| Semipolar GaN templates on sapphire: 432 nm InGaN light-emitting diodes and light extraction simulations M Khoury, H Li, B Bonef, LY Kuritzky, AJ Mughal, S Nakamura, JS Speck, ... Applied Physics Express 11 (3), 036501, 2018 | 13 | 2018 |
| Polarization-enhanced InGaN/GaN-based hybrid tunnel junction contacts to GaN p–n diodes and InGaN LEDs AJ Mughal, EC Young, AI Alhassan, J Back, S Nakamura, JS Speck, ... Applied Physics Express 10 (12), 121006, 2017 | 13 | 2017 |
| 444 nm InGaN light emitting diodes on low-defect-density GaN templates on patterned sapphire M Khoury, H Li, LY Kuritzky, AJ Mughal, P DeMierry, S Nakamura, ... Applied Physics Express 10 (10), 106501, 2017 | 13 | 2017 |
| Band-gap engineering by molecular mechanical strain-induced giant tuning of the luminescence in colloidal amorphous porous silicon nanostructures A Mughal, JK El Demellawi, S Chaieb Physical Chemistry Chemical Physics 16 (46), 25273-25279, 2014 | 11 | 2014 |
| Structural and optical properties of group III doped hydrothermal ZnO thin films AJ Mughal, B Carberry, JS Speck, S Nakamura, SP DenBaars Journal of Electronic Materials 46, 1821-1825, 2017 | 10 | 2017 |
| Highly efficient InGaN-based LED with pre-roughening backside of GaN substrate EA Alias, MEA Samsudin, N Ibrahim, AJ Mughal, SP Denbaars, JS Speck, ... JOSA B 37 (6), 1614-1619, 2020 | 7 | 2020 |
| Zinc oxide clad limited area epitaxy semipolar III-nitride laser diodes A Myzaferi, AJ Mughal, DA Cohen, RM Farrell, S Nakamura, JS Speck, ... Optics Express 26 (10), 12490-12498, 2018 | 7 | 2018 |
| Optoelectronic properties of doped hydrothermal ZnO thin films AJ Mughal, B Carberry, SH Oh, A Myzaferi, JS Speck, S Nakamura, ... physica status solidi (a) 214 (6), 1600941, 2017 | 3 | 2017 |
| Solvothermal synthesis of acmite conversion coatings on steel T Whalen, B VanSaders, C Vakifahmetoglu, A Mughal, E Zlotnikov, ... Journal of the American Ceramic Society 96 (11), 3656-3661, 2013 | 3 | 2013 |
| III-nitride light emitting diodes with tunnel junctions wafer bonded to a conductive oxide and having optically pumped layers AJ Mughal, SJ Kowsz, RM Farrell, BP Yonkee, EC Young, CD Pynn, ... US Patent 11,411,137, 2022 | 2 | 2022 |
| Synthesis and characterization of luminescent amorphous porous silicon (ap-Si) nanoparticles via unconventional stain etching MR Tchalala, JK El-Demellawi, AJ Mughal, S Chaieb Journal of Physics: Conference Series 758 (1), 012018, 2016 | 2 | 2016 |
| In-situ ATR-IR monitoring of hydrothermal carbonation of wollastonite D Kopp, K Blinn, H Wu, Q Li, AJ Mughal, M Sender, B Jadidian, RE Riman Vibrational Spectroscopy 123, 103442, 2022 | 1 | 2022 |
| Electroless deposition of palladium films on gallium nitride for Schottky diodes SP Dail, A Molina, IE Campbell, AJ Mughal, SE Mohney Journal of Materials Science: Materials in Electronics 33 (10), 7598-7605, 2022 | | 2022 |
| High Work Function Metallizations on Gallium Nitride for Schottky Diodes A Molina, SP Dail, IE Campbell, TN Walter, MW Thomas, AJ Mughal, ... Electrochemical Society Meeting Abstracts 239, 1072-1072, 2021 | | 2021 |
Steven DenBaarsProfessor of Materials, University of California Santa BarbaraVerified email at engineering.ucsb.edu
