| Heavy-ion irradiation study in SOI-based and bulk-based junctionless FinFETs using 3D-TCAD simulation N Vinodhkumar, YV Bhuvaneshwari, KK Nagarajan, R Srinivasan Microelectronics Reliability 55 (12), 2647-2653, 2015 | 13 | 2015 |
| Extraction of mobility and degradation coefficients in double gate junctionless transistors YV Bhuvaneshwari, A Kranti Semiconductor Science and Technology 32 (12), 125011, 2017 | 12 | 2017 |
| SEU study of 4T, 6T, 7T, 8T, 10T MOSFET based SRAM using TCAD simulation YV Bhuvaneshwari, NP Sai, NV Kumar, C Thiruvenkatesan, R Srinivasan International Conference on Information Communication and Embedded Systems …, 2014 | 12 | 2014 |
| Characterizing and Modelling of the BTI Reliability in IGZO-TFT using Light-assisted IV Spectroscopy Z Wu, A Chasin, J Franco, S Subhechha, H Dekkers, YV Bhuvaneshwari, ... 2022 International Electron Devices Meeting (IEDM), 30.1. 1-30.1. 4, 2022 | 7 | 2022 |
| Enhancing multi-functionality of reconfigurable transistors by implementing high retention capacitorless dynamic memory YV Bhuvaneshwari, A Kranti Semiconductor Science and Technology 36 (11), 115003, 2021 | 4 | 2021 |
| Assessment of mobility and its degradation parameters in a shell doped junctionless transistor YV Bhuvaneshwari, A Kranti Semiconductor Science and Technology 33 (11), 115020, 2018 | 4 | 2018 |
| NPN SiGe Hetero Junction Transistor latch-up memory selector SC G. Hiblot, T. Ravsher, R. Loo, Y V Bhuvaneshwari, Y. Canvel, N. F. Vergel ... IEEE Electron Device Letters 44 (4), 614-617, 2023 | 1 | 2023 |
| Sensitivity implications for programmable transistor based 1T-DRAM RK Nirala, S Semwal, YV Bhuvaneshwari, N Rai, A Kranti Solid-State Electronics 194, 108353, 2022 | 1 | 2022 |
| Extraction and Analysis of Mobility in Double Gate Junctionless Transistor YV Bhuvaneshwari, A Kranti 2017 30th International Conference on VLSI Design and 2017 16th …, 2017 | 1 | 2017 |
| Extraction of bulk and accumulation mobility components in double gate junctionless MOSFET YV Bhuvaneshwari, A Kranti 2016 3rd International Conference on Emerging Electronics (ICEE), 1-4, 2016 | 1 | 2016 |
| The Impact of IGZO Channel Composition on DRAM Transistor Performance A Kruv, MJ Van Setten, HFW Dekkers, C Lorant, D Verreck, Q Smets, ... IEEE Transactions on Electron Devices, 2023 | | 2023 |
| Degradation mapping and impact of device dimension on IGZO TFTs BTI P Rinaudo, A Chasin, J Franco, Z Wu, S Subhechha, G Arutchelvan, ... IEEE Transactions on Device and Materials Reliability, 2023 | | 2023 |
| Estimation of doping in junctionless transistors through dc characteristics YV Bhuvaneshwari, A Kranti Semiconductor Science and Technology 34 (5), 055020, 2019 | | 2019 |
| Extraction and interpretation of mobility in heavily doped junctionless transistors YV Bhuvaneshwari Indore, 0 | | |
Mukta Singh PariharGlobalFoundriesVerified email at globalfoundries.com
