| Structure of GaN quantum dots grown under “modified Stranski–Krastanow” conditions on AlN N Gogneau, D Jalabert, E Monroy, T Shibata, M Tanaka, B Daudin Journal of Applied physics 94 (4), 2254-2261, 2003 | 134 | 2003 |
| High-electron-mobility AlGaN∕ AlN∕ GaN heterostructures grown on 100-mm-diam epitaxial AlN/sapphire templates by metalorganic vapor phase epitaxy M Miyoshi, H Ishikawa, T Egawa, K Asai, M Mouri, T Shibata, M Tanaka, ... Applied Physics Letters 85 (10), 1710-1712, 2004 | 120 | 2004 |
| Si-doped GaN∕ AlN quantum dot superlattices for optoelectronics at telecommunication wavelengths F Guillot, E Bellet-Amalric, E Monroy, M Tchernycheva, L Nevou, ... Journal of applied physics 100 (4), 2006 | 109 | 2006 |
| Growth and optical properties of GaN/AlN quantum wells C Adelmann, E Sarigiannidou, D Jalabert, Y Hori, JL Rouviere, B Daudin, ... Applied Physics Letters 82 (23), 4154-4156, 2003 | 106 | 2003 |
| Improved dc characteristics of AlGaN/GaN high-electron-mobility transistors on AlN/sapphire templates S Arulkumaran, M Sakai, T Egawa, H Ishikawa, T Jimbo, T Shibata, K Asai, ... Applied physics letters 81 (6), 1131-1133, 2002 | 87 | 2002 |
| Exciton spectra of an AlN epitaxial film on (0001) sapphire substrate grown by low-pressure metalorganic vapor phase epitaxy T Onuma, SF Chichibu, T Sota, K Asai, S Sumiya, T Shibata, M Tanaka Applied Physics Letters 81 (4), 652-654, 2002 | 82 | 2002 |
| Influence of AlN overgrowth on structural properties of GaN quantum wells and quantum dots grown by plasma-assisted molecular beam epitaxy N Gogneau, D Jalabert, E Monroy, E Sarigiannidou, JL Rouviere, ... Journal of applied physics 96 (2), 1104-1110, 2004 | 81 | 2004 |
| Growth of high-quality GaN films on epitaxial AlN/sapphire templates by MOVPE M Sakai, H Ishikawa, T Egawa, T Jimbo, M Umeno, T Shibata, K Asai, ... Journal of crystal growth 244 (1), 6-11, 2002 | 65 | 2002 |
| Impact of strain on free-exciton resonance energies in wurtzite AlN H Ikeda, T Okamura, K Matsukawa, T Sota, M Sugawara, T Hoshi, ... Journal of Applied Physics 102 (12), 2007 | 62 | 2007 |
| Free and bound exciton fine structures in AlN epilayers grown by low-pressure metalorganic vapor phase epitaxy T Onuma, T Shibata, K Kosaka, K Asai, S Sumiya, M Tanaka, T Sota, ... Journal of Applied Physics 105 (2), 2009 | 59 | 2009 |
| Growth of Crack‐Free and High‐Quality AlGaN with High Al Content Using Epitaxial AlN (0001) Films on Sapphire Y Kida, T Shibata, H Naoi, H Miyake, K Hiramatsu, M Tanaka physica status solidi (a) 194 (2), 498-501, 2002 | 59 | 2002 |
| AlN epitaxial growth on off-angle R-plane sapphire substrates by MOCVD T Shibata, K Asai, Y Nakamura, M Tanaka, K Kaigawa, J Shibata, H Sakai Journal of crystal growth 229 (1-4), 63-68, 2001 | 59 | 2001 |
| Modification of GaN (0001) growth kinetics by Mg doping E Monroy, T Andreev, P Holliger, E Bellet-Amalric, T Shibata, M Tanaka, ... Applied physics letters 84 (14), 2554-2556, 2004 | 53 | 2004 |
| Intraband absorption of doped GaN∕ AlN quantum dots at telecommunication wavelengths M Tchernycheva, L Nevou, L Doyennette, A Helman, R Colombelli, ... Applied Physics Letters 87 (10), 2005 | 52 | 2005 |
| Photonic device, a substrate for fabricating a photonic device, a method for fabricating the photonic device and a method for manufacturing the photonic device-fabricating … T Shibata, K Asai, T Nagai, M Tanaka US Patent 6,495,894, 2002 | 50 | 2002 |
| Transmission electron microscopic observation of AlN/α-Al2O3 heteroepitaxial interface with initial-nitriding AlN layer K Masu, Y Nakamura, T Yamazaki, T Shibata, M Takahashi, ... Japanese journal of applied physics 34 (6B), L760, 1995 | 50 | 1995 |
| AlGaN-based deep ultraviolet light-emitting diodes grown on epitaxial AlN/sapphire templates S Sumiya, Y Zhu, J Zhang, K Kosaka, M Miyoshi, T Shibata, M Tanaka, ... Japanese Journal of Applied Physics 47 (1R), 43, 2008 | 49 | 2008 |
| Nanostructural characterization and two-dimensional electron-gas properties in high-mobility AlGaN∕ AlN∕ GaN heterostructures grown on epitaxial AlN/sapphire templates M Miyoshi, T Egawa, H Ishikawa, KI Asai, T Shibata, M Tanaka, O Oda Journal of applied physics 98 (6), 2005 | 47 | 2005 |
| Growth of thick AlN layer by hydride vapor phase epitaxy YH Liu, T Tanabe, H Miyake, K Hiramatsu, T Shibata, M Tanaka, Y Masa Japanese journal of applied physics 44 (4L), L505, 2005 | 44 | 2005 |
| DC characteristics in high-quality AlGaN/AlN/GaN high-electron-mobility transistors grown on AlN/sapphire templates M Miyoshi, A Imanishi, T Egawa, H Ishikawa, K Asai, T Shibata, M Tanaka, ... Japanese journal of applied physics 44 (9R), 6490, 2005 | 41 | 2005 |
Kazumasa HiramatsuMie University, Emeritus ProfessoreVerified email at elec.mie-u.ac.jp
