| Electrical and dielectric properties of Al/HfO2/p-Si MOS device at high temperatures S Bengi, MM Bülbül Current Applied Physics 13 (8), 1819-1825, 2013 | 50 | 2013 |
| Temperature dependent capacitance and conductance-voltage characteristics of Au/polyvinyl alcohol (Co, Zn)/n-Si Schottky diodes MM Bülbül, S Bengi, İ Dökme, Ş Altındal, T Tunç Journal of Applied Physics 108 (3), 2010 | 42 | 2010 |
| Temperature dependence of characteristic parameters of the Au/C20H12/n-Si Schottky barrier diodes (SBDs) in the wide temperature range K Moraki, S Bengi, S Zeyrek, MM Bülbül, Ş Altındal Journal of Materials Science: Materials in Electronics 28, 3987-3996, 2017 | 41 | 2017 |
| Frequency dependent dielectric properties and electrical conductivity of platinum silicide/Si contact structures with diffusion barrier IM Afandiyeva, MM Bülbül, Ş Altındal, S Bengi Microelectronic engineering 93, 50-55, 2012 | 40 | 2012 |
| Investigation of electrical characterization of Al/HfO2/p-Si structures in wide temperature range S Bengi, E Yükseltürk, MM Bülbül Journal of Materials Science: Materials in Electronics 34 (3), 189, 2023 | 7 | 2023 |
| Annealing effect on the electrical properties of HfO2 based Schottky barrier diodes S Bengi, MM Bülbül J. Optoelectron. Adv. Mater 16, 451-456, 2014 | 6 | 2014 |
| Electrical Properties and Conduction Mechanism of Au/C20H12/n-Si Structure at High Temperatures Utilizing Impedance Measurements S Bengi Journal of Electronic Materials 52 (5), 3083-3091, 2023 | 4 | 2023 |
| Au/PVA/n-Si (MIS) Schottky diyotların temel elektriksel parametrelerinin sıcaklığa bağlı incelenmesi S Bengi Yüksek Lisans Tezi, Gazi Üniversitesi Fen Bilimleri Enstitüsü, Ankara, 27-32, 1993 | 4 | 1993 |
| The effects of illumination on the current conduction mechanisms of the Au/C20H12/n-Si Schottky barrier diode (SBD) S Bengi Physica Scripta 98 (12), 125925, 2023 | 2 | 2023 |
| The frequency dependent complex dielectric and electric modulus properties of Au/P3HT/n-Si (MPS) Schottky barrier diode (SBD) E Yükseltürk, S Bengi Journal of Materials Science: Materials in Electronics 34 (21), 1580, 2023 | 2 | 2023 |
| The capacitance/conductance and surface state intensity characteristics of the Al/(CMAT)/p-Si structures HG Çetinkaya, S Bengi, O Sevgili, Ş Altındal Physica Scripta 99 (2), 025955, 2024 | 1 | 2024 |
| Determining the dielectric characteristics of the Au/C20H12/n-Si (MPS) structure over a wide temperature and voltage S Bengi, Ş Altındal, S Zeyrek Indian Journal of Physics, 1-8, 2023 | 1 | 2023 |
| Investigation of the frequency effect on electrical modulus and dielectric properties of Al/p-Si structure with% 0.5 Bi: ZnO interfacial layer S Bengi, HG Çetinkaya, Ş Altındal, P Durmuş Ionics, 1-9, 2024 | | 2024 |
| The Frequency Dependent of Main Electrical Parameters, Conductivity and Surface States in the Al/(% 0.5 Bi: ZnO)/p-Si/Au (MIS) Structures HG Çetinkaya, S Bengi, P Durmuş, S Demirezen, Ş Altındal Silicon, 1-8, 2024 | | 2024 |
| Au/C20H12/n-Si (MPS) Yapının Elektriksel Özelliklerinin Frekansa Bağlı İncelenmesi S BENGİ Journal of the Institute of Science and Technology 10 (1), 179-189, 2020 | | 2020 |
