| Enhancement of Superconductivity and Evidence of Structural Instability in Intercalated Graphite under High Pressure A Gauzzi, S Takashima, N Takeshita, C Terakura, H Takagi, N Emery, ... Physical review letters 98 (6), 067002, 2007 | 143 | 2007 |
| The origins and properties of intrinsic nonradiative recombination centers in wide bandgap GaN and AlGaN SF Chichibu, A Uedono, K Kojima, H Ikeda, K Fujito, S Takashima, M Edo, ... Journal of applied physics 123 (16), 2018 | 139 | 2018 |
| Hall-effect measurements of metalorganic vapor-phase epitaxy-grown p-type homoepitaxial GaN layers with various Mg concentrations M Horita, S Takashima, R Tanaka, H Matsuyama, K Ueno, M Edo, ... Japanese Journal of Applied Physics 56 (3), 031001, 2017 | 103 | 2017 |
| Nitrogen vacancies as a common element of the green luminescence and nonradiative recombination centers in Mg-implanted GaN layers formed on a GaN substrate K Kojima, S Takashima, M Edo, K Ueno, M Shimizu, T Takahashi, ... Applied Physics Express 10 (6), 061002, 2017 | 83 | 2017 |
| Control of the inversion-channel MOS properties by Mg doping in homoepitaxial p-GaN layers S Takashima, K Ueno, H Matsuyama, T Inamoto, M Edo, T Takahashi, ... Applied Physics Express 10 (12), 121004, 2017 | 78 | 2017 |
| Vacancy‐type defects and their annealing behaviors in Mg‐implanted GaN studied by a monoenergetic positron beam A Uedono, S Takashima, M Edo, K Ueno, H Matsuyama, H Kudo, ... physica status solidi (b) 252 (12), 2794-2801, 2015 | 75 | 2015 |
| Fabrication of vertical Schottky barrier diodes on n-type freestanding AlN substrates grown by hydride vapor phase epitaxy T Kinoshita, T Nagashima, T Obata, S Takashima, R Yamamoto, ... Applied Physics Express 8 (6), 061003, 2015 | 70 | 2015 |
| Demonstration of 1200 V/1.4 mΩ cm2 vertical GaN planar MOSFET fabricated by an all ion implantation process R Tanaka, S Takashima, K Ueno, H Matsuyama, M Edo Japanese Journal of Applied Physics 59 (SG), SGGD02, 2020 | 67 | 2020 |
| Carrier Trapping by Vacancy‐Type Defects in Mg‐Implanted GaN Studied Using Monoenergetic Positron Beams A Uedono, S Takashima, M Edo, K Ueno, H Matsuyama, W Egger, ... physica status solidi (b) 255 (4), 1700521, 2018 | 67 | 2018 |
| Sidewall dominated characteristics on fin-gate AlGaN/GaN MOS-channel-HEMTs S Takashima, Z Li, TP Chow IEEE transactions on electron devices 60 (10), 3025-3031, 2013 | 65 | 2013 |
| Large electron capture-cross-section of the major nonradiative recombination centers in Mg-doped GaN epilayers grown on a GaN substrate SF Chichibu, K Shima, K Kojima, S Takashima, M Edo, K Ueno, ... Applied Physics Letters 112 (21), 2018 | 59 | 2018 |
| Impact of annealing on ALD Al2O3 gate dielectric for GaN MOS devices T Marron, S Takashima, Z Li, TP Chow physica status solidi c 9 (3‐4), 907-910, 2012 | 55 | 2012 |
| Mg implantation dose dependence of MOS channel characteristics in GaN double-implanted MOSFETs R Tanaka, S Takashima, K Ueno, H Matsuyama, M Edo, K Nakagawa Applied Physics Express 12 (5), 054001, 2019 | 42 | 2019 |
| Robustness of non-Fermi-liquid behavior near the ferromagnetic critical point in clean ZrZn2 S Takashima, M Nohara, H Ueda, N Takeshita, C Terakura, F Sakai, ... journal of the physical society of japan 76 (4), 043704-043704, 2007 | 36 | 2007 |
| Electron microscopy studies of the intermediate layers at the SiO2/GaN interface K Mitsuishi, K Kimoto, Y Irokawa, T Suzuki, K Yuge, T Nabatame, ... Japanese Journal of Applied Physics 56 (11), 110312, 2017 | 34 | 2017 |
| Cathodoluminescene study of Mg implanted GaN: the impact of dislocation on Mg diffusion J Chen, W Yi, T Kimura, S Takashima, M Edo, T Sekiguchi Applied Physics Express 12 (5), 051010, 2019 | 33 | 2019 |
| Room temperature photoluminescence lifetime for the near-band-edge emission of epitaxial and ion-implanted GaN on GaN structures SF Chichibu, K Shima, K Kojima, S Takashima, K Ueno, M Edo, H Iguchi, ... Japanese Journal of Applied Physics 58 (SC), SC0802, 2019 | 28 | 2019 |
| Atomic-scale quantitative analysis of implanted Mg in annealed GaN layers on free-standing GaN substrates A Kumar, J Uzuhashi, T Ohkubo, R Tanaka, S Takashima, M Edo, K Hono Journal of Applied Physics 126 (23), 2019 | 27 | 2019 |
| Comparative analysis of defects in Mg-implanted and Mg-doped GaN layers on freestanding GaN substrates A Kumar, K Mitsuishi, T Hara, K Kimoto, Y Irokawa, T Nabatame, ... Nanoscale Research Letters 13, 1-8, 2018 | 25 | 2018 |
| Metal–oxide–semiconductor interface and dielectric properties of atomic layer deposited SiO2 on GaN S Takashima, Z Li, TP Chow Japanese Journal of Applied Physics 52 (8S), 08JN24, 2013 | 24 | 2013 |
