| Method of etching a workpiece L Godet, MD Evans, CC Chen US Patent 8,815,720, 2014 | 105 | 2014 |
| Ion beam incidence angle and beam divergence monitor GK Larsen, A Purohit, RA Poitras, M Evans, D Brennan US Patent 6,690,022, 2004 | 42* | 2004 |
| Technique for high-efficiency ion implantation MD Evans, DT Fielder, GA Norris US Patent 7,176,470, 2007 | 27 | 2007 |
| Orientational Ordering of Frustrated Molecular Quadrupoles: NMR Studies of -Ar Solid Mixtures JA Hamida, NS Sullivan, MD Evans Physical review letters 73 (20), 2720, 1994 | 24 | 1994 |
| Optical component having variable depth gratings and method of formation J Hautala, M Evans, RMT Thijssen, JC Olson US Patent 10,818,499, 2020 | 20 | 2020 |
| Substrate handling and heating system MD Evans, JM Schaller, DJ Lischer, A Moradian, WT Weaver, RB Vopat US Patent 10,443,934, 2019 | 20 | 2019 |
| Techniques for improved uniformity tuning in an ion implanter system MD Evans US Patent 7,755,066, 2010 | 20 | 2010 |
| Semiconductor workpiece temperature measurement system K Petry, JM Schaller, A Moradian, MD Evans US Patent 9,933,314, 2018 | 19 | 2018 |
| Apparatus for heating and processing a substrate MD Evans, JM Schaller, DJ Lischer, A Moradian US Patent 9,685,303, 2017 | 17 | 2017 |
| Technique for uniformity tuning in an ion implanter system JC Olson, JG England, MD Evans, DT Fielder, GA Norris, S Chang, ... US Patent 7,355,188, 2008 | 17 | 2008 |
| Boron nitride as a substrate for H2 monolayer studies MD Evans, N Patel, NS Sullivan Journal of Low Temperature Physics 89, 653-656, 1992 | 17 | 1992 |
| Semiconductor workpiece temperature measurement system K Petry, JM Schaller, A Moradian, MD Evans US Patent 10,739,208, 2020 | 16 | 2020 |
| Experimental studies of hydrogen on boron nitride: I. Adsorption isotherms of HD MD Evans, NS Sullivan Journal of low temperature physics 100, 535-549, 1995 | 16 | 1995 |
| Controlling etch angles by substrate rotation in angled etch tools RMT THIJSSEN, M Evans, JC Olson US Patent 10,302,826, 2019 | 10 | 2019 |
| Heteroepitaxial growth using ion implantation MD Evans, CC Chen, CH Kuo US Patent 8,906,727, 2014 | 10 | 2014 |
| System and method for forming diffracted optical element having varied gratings M Evans, RMT Thijssen, J Olson, P Kurunczi, R Masci US Patent 10,598,832, 2020 | 9 | 2020 |
| Dynamic heating method and system for wafer processing MD Evans, K Anglin, DJ Lischer, WT Weaver, JM Schaller, RB Vopat US Patent 9,287,148, 2016 | 9 | 2016 |
| Ion beam current uniformity monitor, ion implanter and related method WG Callahan, MD Evans, GM Gammel, NE Hussey, GA Norris, JC Olson US Patent 7,663,125, 2010 | 9 | 2010 |
| Experimental studies of hydrogen on boron nitride: II. NMR studies of orientational ordering of H2 MD Evans, NS Sullivan Journal of low temperature physics 100, 551-574, 1995 | 9 | 1995 |
| Techniques for removing molecular fragments from an ion implanter CR Hatem, JT Scheuer, RJ Low, MD Evans, JG England US Patent App. 11/733,973, 2008 | 8 | 2008 |
Rutger ThijssenApplied MaterialsVerified email at amat.com
