| Cut-and-paste” manufacture of multiparametric epidermal sensor systems S Yang, YC Chen, L Nicolini, P Pasupathy, J Sacks, B Su, R Yang, ... Adv. Mater 27 (41), 6423-6430, 2015 | 313 | 2015 |
| Complementary metal‐oxide semiconductor and memristive hardware for neuromorphic computing M Rahimi Azghadi, YC Chen, JK Eshraghian, J Chen, CY Lin, ... Advanced Intelligent Systems 2 (5), 1900189, 2020 | 117 | 2020 |
| Intrinsic SiOx-based unipolar resistive switching memory. II. Thermal effects on charge transport and characterization of multilevel programing YF Chang, B Fowler, YC Chen, YT Chen, Y Wang, F Xue, F Zhou, JC Lee Journal of Applied Physics 116 (4), 2014 | 113 | 2014 |
| Integrated One Diode–One Resistor Architecture in Nanopillar SiOx Resistive Switching Memory by Nanosphere Lithography L Ji, YF Chang, B Fowler, YC Chen, TM Tsai, KC Chang, MC Chen, ... Nano letters 14 (2), 813-818, 2014 | 112 | 2014 |
| Neuronal dynamics in HfO x/AlO y-based homeothermic synaptic memristors with low-power and homogeneous resistive switching S Kim, J Chen, YC Chen, MH Kim, H Kim, MW Kwon, S Hwang, M Ismail, ... Nanoscale 11 (1), 237-245, 2019 | 103 | 2019 |
| Demonstration of synaptic behaviors and resistive switching characterizations by proton exchange reactions in silicon oxide YF Chang, B Fowler, YC Chen, F Zhou, CH Pan, TC Chang, JC Lee Scientific reports 6 (1), 21268, 2016 | 96 | 2016 |
| Scaling effect on silicon nitride memristor with highly doped Si substrate S Kim, S Jung, MH Kim, YC Chen, YF Chang, KC Ryoo, S Cho, JH Lee, ... Small 14 (19), 1704062, 2018 | 91 | 2018 |
| Intrinsic SiOx-based unipolar resistive switching memory. I. Oxide stoichiometry effects on reversible switching and program window optimization YF Chang, B Fowler, YC Chen, YT Chen, Y Wang, F Xue, F Zhou, JC Lee Journal of Applied Physics 116 (4), 2014 | 74 | 2014 |
| Attaining resistive switching characteristics and selector properties by varying forming polarities in a single HfO2-based RRAM device with a vanadium electrode CY Lin, PH Chen, TC Chang, KC Chang, SD Zhang, TM Tsai, CH Pan, ... Nanoscale 9 (25), 8586-8590, 2017 | 71 | 2017 |
| A novel resistive switching identification method through relaxation characteristics for sneak-path-constrained selectorless RRAM application YC Chen, CC Lin, ST Hu, CY Lin, B Fowler, J Lee Scientific Reports 9 (1), 12420, 2019 | 51 | 2019 |
| Proton exchange reactions in SiOx-based resistive switching memory: Review and insights from impedance spectroscopy YF Chang, B Fowler, YC Chen, JC Lee Progress in Solid State Chemistry 44 (3), 75-85, 2016 | 48 | 2016 |
| Memcomputing (Memristor + Computing) in Intrinsic SiOx-Based Resistive Switching Memory: Arithmetic Operations for Logic Applications YF Chang, F Zhou, BW Fowler, YC Chen, CC Hsieh, L Guckert, ... IEEE Transactions on Electron Devices 64 (7), 2977-2983, 2017 | 45 | 2017 |
| Study of self-compliance behaviors and internal filament characteristics in intrinsic SiOx-based resistive switching memory YF Chang, B Fowler, F Zhou, YC Chen, JC Lee Applied Physics Letters 108 (3), 2016 | 42 | 2016 |
| Control of AMIRA’s ball and beam system via improved fuzzy feedback linearization approach TL Chien, CC Chen, MC Tsai, YC Chen Applied Mathematical Modelling 34 (12), 3791-3804, 2010 | 39 | 2010 |
| Graphite-based selectorless RRAM: Improvable intrinsic nonlinearity for array applications YC Chen, ST Hu, CY Lin, B Fowler, HC Huang, CC Lin, S Kim, YF Chang, ... Nanoscale 10 (33), 15608-15614, 2018 | 37 | 2018 |
| Dynamic conductance characteristics in HfO x-based resistive random access memory YC Chen, YF Chang, X Wu, F Zhou, M Guo, CY Lin, CC Hsieh, B Fowler, ... RSC advances 7 (21), 12984-12989, 2017 | 36 | 2017 |
| Post-Moore memory technology: Sneak path current (SPC) phenomena on RRAM crossbar array and solutions YC Chen, CC Lin, YF Chang Micromachines 12 (1), 50, 2021 | 31 | 2021 |
| The demonstration of increased selectivity during experimental measurement in filament-type vanadium oxide-based selector CK Chen, CY Lin, PH Chen, TC Chang, CC Shih, YT Tseng, HX Zheng, ... IEEE Transactions on Electron Devices 65 (10), 4622-4627, 2018 | 31 | 2018 |
| Ultralow power switching in a silicon-rich SiN y/SiN x double-layer resistive memory device S Kim, YF Chang, MH Kim, S Bang, TH Kim, YC Chen, JH Lee, BG Park Physical Chemistry Chemical Physics 19 (29), 18988-18995, 2017 | 28 | 2017 |
| Unidirectional threshold resistive switching in Au/NiO/Nb: SrTiO3 devices MQ Guo, YC Chen, CY Lin, YF Chang, B Fowler, QQ Li, J Lee, YG Zhao Applied Physics Letters 110 (23), 2017 | 27 | 2017 |
Jack C. LeeThe University of Texas at Austin, IEEE Fellow在 austin.utexas.edu 的電子郵件地址已通過驗證
