| Integrated circuits with inductors in multiple conductive layers P Baumgartner, T Benetik US Patent 7,489,220, 2009 | 106 | 2009 |
| Semiconductor device having different fin widths P Baumgartner, D Siprak US Patent 8,716,786, 2014 | 90 | 2014 |
| Semiconductor element and a method for producing the same P Baumgartner, D Siprak US Patent 7,906,802, 2011 | 64 | 2011 |
| Fabrication of in‐plane‐gate transistor structures by focused laser beam‐induced Zn doping of modulation‐doped GaAs/AlGaAs quantum wells P Baumgartner, K Brunner, G Abstreiter, G Böhm, G Tränkle, G Weimann Applied physics letters 64 (5), 592-594, 1994 | 44 | 1994 |
| Asymmetric segmented channel transistors P Baumgartner US Patent 8,067,287, 2011 | 34 | 2011 |
| Noise reduction in CMOS circuits through switched gate and forward substrate bias D Siprak, M Tiebout, N Zanolla, P Baumgartner, C Fiegna IEEE journal of solid-state circuits 44 (7), 1959-1967, 2009 | 32 | 2009 |
| Single-electron transistor fabricated by focused laser beam-induced doping of a GaAs/AlGaAs heterostructure P Baumgartner, W Wegscheider, M Bichler, G Schedelbeck, R Neumann, ... Applied physics letters 70 (16), 2135-2137, 1997 | 28 | 1997 |
| Reduction of RTS noise in small-area MOSFETs under switched bias conditions and forward substrate bias N Zanolla, D Siprak, M Tiebout, P Baumgartner, E Sangiorgi, C Fiegna IEEE transactions on electron devices 57 (5), 1119-1128, 2010 | 24 | 2010 |
| Measurement and simulation of gate voltage dependence of RTS emission and capture time constants in MOSFETs N Zanolla, D Siprak, P Baumgartner, E Sangiorgi, C Fiegna 2008 9th International Conference on Ultimate Integration of Silicon, 137-140, 2008 | 23 | 2008 |
| Semiconductor devices and methods of manufacture thereof HJ Barth, E Ruderer, A Von Glasow, P Riess, E Kaltalioglu, ... US Patent 8,138,539, 2012 | 22 | 2012 |
| Fabrication of lateral npn‐phototransistors with high gain and sub‐μm spatial resolution P Baumgartner, C Engel, G Abstreiter, G Böhm, G Weimann Applied physics letters 66 (6), 751-753, 1995 | 21 | 1995 |
| Radio frequency shielding within a semiconductor package E Goetz, B Memmler, JE Mueller, P Baumgartner US Patent 9,362,233, 2016 | 20 | 2016 |
| Fabrication of n‐ and p‐channel in‐plane‐gate transistors from Si/SiGe/Ge heterostructures by focused laser beam writing M Holzmann, P Baumgartner, C Engel, JF Nützel, G Abstreiter, F Schäffler Applied physics letters 68 (21), 3025-3027, 1996 | 14 | 1996 |
| Semiconductor device with capacitor arrangement electrically coupled to inductor coil P Baumgartner, P Riess US Patent 7,906,831, 2011 | 12 | 2011 |
| Integrated capacitor structure P Baumgartner, P Riess US Patent 7,557,426, 2009 | 12 | 2009 |
| Semiconductor device having different fin widths P Baumgartner, D Siprak US Patent App. 13/401,097, 2012 | 11 | 2012 |
| Semiconductor Manufacturing Process Charge Protection Circuits U Hodel, P Baumgartner US Patent App. 11/854,893, 2009 | 11 | 2009 |
| Magnetotransport of electrons in arrays of wires in Si/Si0. 7Ge0. 3 heterostructures M Holzmann, D Többen, P Baumgartner, G Abstreiter, A Kriele, H Lorenz, ... Surface science 361, 673-676, 1996 | 10 | 1996 |
| Substrate cross-talk analysis flow for submicron CMOS system-on-chip T Noulis, P Baumgartner Electronics Letters 51 (12), 953-954, 2015 | 9 | 2015 |
| Semiconductor device with reduced capacitance tolerance value P Baumgartner, P Riess, T Benetik US Patent 8,394,696, 2013 | 9 | 2013 |
