| Improving the electrical characteristics of nanoscale triple-gate junctionless FinFET using gate oxide engineering NB Bousari, MK Anvarifard, S Haji-Nasiri AEU-International Journal of Electronics and Communications 108, 226-234, 2019 | 65 | 2019 |
| Proper electrostatic modulation of electric field in a reliable nano-SOI with a developed channel MK Anvarifard, AA Orouji IEEE Transactions on Electron Devices 65 (4), 1653-1657, 2018 | 42 | 2018 |
| A nanoscale‐modified band energy junctionless transistor with considerable progress on the electrical and frequency issue MK Anvarifard, Z Ramezani, IS Amiri, AM Nejad Materials Science in Semiconductor Processing 107, 104849, 2020 | 41 | 2020 |
| A novel graphene nanoribbon FET with an extra peak electric field (EFP-GNRFET) for enhancing the electrical performances MA Eshkalak, MK Anvarifard Physics Letters A 381 (16), 1379-1385, 2017 | 33 | 2017 |
| Improvement of self-heating effect in a novel nanoscale SOI MOSFET with undoped region: a comprehensive investigation on DC and AC operations MK Anvarifard, AA Orouji Superlattices and Microstructures 60, 561-579, 2013 | 32 | 2013 |
| SOI MOSFET with an insulator region (IR-SOI): A novel device for reliable nanoscale CMOS circuits AA Orouji, MK Anvarifard Materials Science and Engineering: B 178 (7), 431-437, 2013 | 32 | 2013 |
| High ability of a reliable novel TFET-based device in detection of biomolecule specifies—A comprehensive analysis on sensing performance MK Anvarifard, Z Ramezani, IS Amiri IEEE Sensors Journal 21 (5), 6880-6887, 2020 | 30 | 2020 |
| Profound analysis on sensing performance of Nanogap SiGe source DM-TFET biosensor MK Anvarifard, Z Ramezani, IS Amiri, K Tamersit, AM Nejad Journal of Materials Science: Materials in Electronics 31, 22699-22712, 2020 | 30 | 2020 |
| Successfully controlled potential distribution in a novel high-voltage and high-frequency SOI MESFET MK Anvarifard IEEE Transactions on Device and Materials Reliability 16 (4), 631-637, 2016 | 28 | 2016 |
| Enhancement of a nanoscale novel Esaki tunneling diode source TFET (ETDS-TFET) for low-voltage operations MK Anvarifard, AA Orouji Silicon 11 (6), 2547-2556, 2019 | 24 | 2019 |
| Enhanced critical electrical characteristics in a nanoscale low-voltage SOI MOSFET with dual tunnel diode MK Anvarifard, AA Orouji IEEE Transactions on Electron Devices 62 (5), 1672-1676, 2015 | 24 | 2015 |
| Improvement of electrical properties in a novel partially depleted SOI MOSFET with emphasizing on the hysteresis effect MK Anvarifard, AA Orouji IEEE transactions on electron devices 60 (10), 3310-3317, 2013 | 24 | 2013 |
| An impressive structure containing triple trenches for RF power performance (TT-SOI-MESFET) MK Anvarifard Journal of Computational Electronics 17, 230-237, 2018 | 23 | 2018 |
| Increase in the scattering of electric field lines in a new high voltage SOI MESFET MK Anvarifard Superlattices and Microstructures 97, 15-27, 2016 | 23 | 2016 |
| A novel nanoscale SOI MOSFET with Si embedded layer as an effective heat sink MK Anvarifard, AA Orouji International Journal of Electronics 102 (8), 1394-1406, 2015 | 23 | 2015 |
| Proposal of an embedded Nanogap biosensor by a graphene nanoribbon field‐effect transistor for biological samples detection MK Anvarifard, Z Ramezani, IS Amiri physica status solidi (a) 217 (2), 1900879, 2020 | 22 | 2020 |
| Stopping electric field extension in a modified nanostructure based on SOI technology-A comprehensive numerical study MK Anvarifard, AA Orouji Superlattices and Microstructures 111, 206-220, 2017 | 22 | 2017 |
| Creation of a new high voltage device with capable of enhancing driving current and breakdown voltage MK Anvarifard Materials Science in Semiconductor Processing 60, 60-65, 2017 | 22 | 2017 |
| Novel reduced body charge technique in reliable nanoscale SOI MOSFETs for suppressing the kink effect AA Orouji, MK Anvarifard Superlattices and Microstructures 72, 111-125, 2014 | 22 | 2014 |
| A guideline for achieving the best electrical performance with strategy of halo in graphene nanoribbon field effect transistor MA Eshkalak, MK Anvarifard ECS Journal of Solid State Science and Technology 5 (12), M141, 2016 | 21 | 2016 |
