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Victor Soler
Victor Soler
Infineon Technologies
Verified email at imb-cnm.csic.es
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Year
Advanced processing for mobility improvement in 4H-SiC MOSFETs: A review
M Cabello, V Soler, G Rius, J Montserrat, J Rebollo, P Godignon
Materials Science in Semiconductor Processing 78, 22-31, 2018
902018
Power Cycling Test on 3.3kV SiC MOSFETs and the Effects of Bipolar Degradation on the Temperature Estimation by VSD-Method
F Hoffmann, V Soler, A Mihaila, N Kaminski
2019 31st International Symposium on Power Semiconductor Devices and ICs …, 2019
272019
High-voltage 4H-SiC power MOSFETs with Boron-doped gate oxide
V Soler, M Cabello, M Berthou, J Montserrat, J Rebollo, P Godignon, ...
IEEE Transactions on Industrial Electronics 64 (11), 8962-8970, 2017
252017
Impact of boron diffusion on oxynitrided gate oxides in 4H-SiC metal-oxide-semiconductor field-effect transistors
M Cabello, V Soler, J Montserrat, J Rebollo, JM Rafí, P Godignon
Applied Physics Letters 111 (4), 2017
222017
New trends in high voltage MOSFET based on wide band gap materials
P Godignon, V Soler, M Cabello, J Montserrat, J Rebollo, L Knoll, ...
2017 international semiconductor conference (CAS), 3-10, 2017
192017
4.5 kV SiC MOSFET with boron doped gate dielectric
V Soler, M Cabello, J Montserrat, J Rebollo, J Millán, P Godignon, ...
2016 28th International Symposium on Power Semiconductor Devices and ICs …, 2016
182016
High-voltage SiC devices: diodes and MOSFETs
J Millán, P Friedrichs, A Mihaila, V Soler, J Rebollo, V Banu, P Godignon
2015 International Semiconductor Conference (CAS), 11-18, 2015
152015
Planar edge terminations for high voltage 4H-SiC power MOSFETs
V Soler, M Berthou, A Mihaila, J Monserrat, P Godignon, J Rebollo, ...
Semiconductor Science and Technology 32 (3), 035007, 2017
82017
Power cycling analysis method for high-voltage SiC diodes
V Banu, V Soler, J Montserrat, J Millán, P Godignon
Microelectronics Reliability 64, 429-433, 2016
82016
Comparative study of boron doped gate oxide impact on 4H and 6H-SiC n-MOSFETs
M Cabello, V Soler, L Knoll, J Montserrat, J Rebollo, A Mihaila, ...
Materials Science in Semiconductor Processing 93, 357-359, 2019
72019
Improved 4H-SiC N-MOSFET Interface Passivation by Combining N2O Oxidation with Boron Diffusion
M Cabello, V Soler, N Mestres, J Montserrat, J Rebollo, J Millán, ...
Materials Science Forum 897, 352-355, 2017
72017
Experimental investigation of SiC 6.5 kV JBS diodes safe operating area
A Mihaila, E Bianda, L Knoll, U Vemulapati, L Kranz, G Alfieri, V Soler, ...
2017 29th International Symposium on Power Semiconductor Devices and IC's …, 2017
62017
SiC power switches evaluation for space applications requirements
P Godignon, S Massetti, X Jordà, V Soler, J Moreno, D Lopez, E Maset
Materials Science Forum 858, 852-855, 2016
62016
Experimental analysis of planar edge terminations for high voltage 4H-SiC devices
V Soler, M Berthou, A Mihaila, J Montserrat, P Godignon, J Rebollo, ...
2015 45th European Solid State Device Research Conference (ESSDERC), 68-71, 2015
62015
Reliability and robustness tests for next-generation high-voltage SiC MOSFETs
V Soler, M Cabello, V Banu, X Jordà, J Montserrat, J Rebollo, MR Rogina, ...
IEEE Journal of Emerging and Selected Topics in Power Electronics 9 (4 …, 2020
52020
Complementary p-channel and n-channel SiC MOSFETs for CMOS integration
V Soler, M Cabello, V Banu, J Montserrat, J Rebollo, P Godignon
Materials Science Forum 924, 975-979, 2018
52018
Design and fabrication of high voltage 4H-SiC MOS transistors
V Soler, M Berthou, P Godignon, J Montserrat, M Florentin, J Rebollo, ...
SAAEI-2015, 2015
52015
Design and process developments towards an optimal 6.5 kV SiC power MOSFET
V Soler
Universitat Politècnica de Catalunya, 2019
32019
Evidence of channel mobility anisotropy on 4H-SiC MOSFETs with low interface trap density
M Cabello, V Soler, D Haasmann, J Montserrat, J Rebollo, P Godignon
Materials Science Forum 963, 473-478, 2019
32019
Dynamic Characterization and Robustness Test of High Voltage SiC MOSFETs
V Soler, M Cabello, V Banu, J Montserrat, J Rebollo, P Godignon, ...
Materials Science Forum 963, 768-772, 2019
22019
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