| Direct gap Ge1-ySny alloys: Fabrication and design of mid-IR photodiodes CL Senaratne, PM Wallace, JD Gallagher, PE Sims, J Kouvetakis, ... Journal of Applied Physics 120 (2), 2016 | 50 | 2016 |
| Mid-infrared (3–8 μm) Ge1− ySny alloys (0.15< y< 0.30): Synthesis, structural, and optical properties C Xu, PM Wallace, DA Ringwala, SLY Chang, CD Poweleit, J Kouvetakis, ... Applied Physics Letters 114 (21), 2019 | 39 | 2019 |
| Ge1− x− ySixSny light emitting diodes on silicon for mid-infrared photonic applications JD Gallagher, C Xu, CL Senaratne, T Aoki, PM Wallace, J Kouvetakis, ... Journal of Applied Physics 118 (13), 2015 | 30 | 2015 |
| Molecular epitaxy of pseudomorphic Ge1− ySny (y= 0.06–0.17) structures and devices on Si/Ge at ultra-low temperatures via reactions of Ge4H10 and SnD4 PM Wallace, CL Senaratne, C Xu, PE Sims, J Kouvetakis, J Menendez Semiconductor Science and Technology 32 (2), 025003, 2017 | 17 | 2017 |
| Electroluminescence from Ge1− ySny diodes with degenerate pn junctions JD Gallagher, CL Senaratne, PM Wallace, J Menendez, J Kouvetakis Applied Physics Letters 107 (12), 2015 | 17 | 2015 |
| In situ low temperature As-doping of Ge films using As (SiH3) 3 and As (GeH3) 3: fundamental properties and device prototypes C Xu, JD Gallagher, PM Wallace, CL Senaratne, P Sims, J Menendez, ... Semiconductor Science and Technology 30 (10), 105028, 2015 | 16 | 2015 |
| Materials physics of GeSn-based semiconductor lasers J Menendez, PM Wallace, C Xu, CL Senaratne, JD Gallagher, ... Materials Today: Proceedings 14, 38-42, 2019 | 12 | 2019 |
| Crystalline (Al1–xBx)PSi3 and (Al1–xBx)AsSi3 Tetrahedral Phases via Reactions of Al(BH4)3 and M(SiH3)3 (M = P, As) P Sims, T Aoki, R Favaro, P Wallace, A White, C Xu, J Menendez, ... Chemistry of Materials 27 (8), 3030-3039, 2015 | 9 | 2015 |
| Fabrication of Ge: Ga hyperdoped materials and devices Using CMOS-compatible Ga and Ge hydride chemistries C Xu, PM Wallace, DA Ringwala, J Menéndez, J Kouvetakis ACS applied materials & interfaces 10 (43), 37198-37206, 2018 | 6 | 2018 |
| Enhanced optical and electrical performance of Ge1− xSnx/Ge/Si (100)(x= 0.062) semiconductor via inductively coupled H2 plasma treatments B Wang, MR Hogsed, TR Harris, PM Wallace, J Kouvetakis Semiconductor Science and Technology 34 (4), 045014, 2019 | 3 | 2019 |
| Synthesis and optical properties of (GaAs) yGe5-2y alloys assembled from molecular building blocks PE Sims, PM Wallace, C Xu, CD Poweleit, B Claflin, J Kouvetakis, ... Applied Physics Letters 111 (12), 2017 | 3 | 2017 |
| Synthesis of heteroepitaxial BP and related Al-B-Sb-As-P films via CVD of Al (BH4) 3 and MH3 (M= P, As, Sb) at temperatures below 600° C P Sims, P Wallace, L Liu, H Zhuang, J Kouvetakis, J Menéndez Semiconductor Science and Technology 35 (8), 085034, 2020 | 2 | 2020 |
| Expanding the Optical Capabilities of Germanium in the Infrared Range through Group IV and III-V-IV Alloy Systems PM Wallace Arizona State University, 2018 | 1 | 2018 |
| Enhanced performance designs of group-IV light emitting diodes for Mid IR photonic applications JD Gallagher, C Senaratne, C Xu, PM Wallace, J Menendez, J Kouvetakis ECS Transactions 69 (14), 147, 2015 | 1 | 2015 |
| Synthesis of High Sn Content Ge1–x–ySixSny (0.1 < y < 0.22) Semiconductors on Si for MWIR Direct Band Gap Applications J Kouvetakis, PM Wallace, C Xu, DA Ringwala, M Mircovich, MA Roldan, ... ACS Applied Materials & Interfaces 15 (41), 48382-48394, 2023 | | 2023 |
| Synthesis and Structural and Optical Properties of Ga(As1–xPx)Ge3 and (GaP)yGe5–2y Semiconductors Using Interface-Engineered Group IV Platforms PM Wallace, PE Sims, C Xu, CD Poweleit, J Kouvetakis, J Menendez ACS applied materials & interfaces 9 (40), 35105-35113, 2017 | | 2017 |
| Pseudomorphic growth of Ge1-y Sny (y = 0.06 - 0.17) films and devices on Ge/Si(100) via chemical precursors P Wallace, C Senaratne, C Xu, P Sims, J Kouvetakis, J Menendez APS March Meeting Abstracts 2017, P28. 012, 2017 | | 2017 |
John KouvetakisArizona State UniversityVerified email at asu.edu
