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Saverio Ricci
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In materia reservoir computing with a fully memristive architecture based on self-organizing nanowire networks
G Milano, G Pedretti, K Montano, S Ricci, S Hashemkhani, L Boarino, ...
Nature materials 21 (2), 195-202, 2022
2302022
Neuromorphic motion detection and orientation selectivity by volatile resistive switching memories
W Wang, E Covi, A Milozzi, M Farronato, S Ricci, C Sbandati, G Pedretti, ...
Advanced Intelligent Systems 3 (4), 2000224, 2021
502021
Reservoir Computing with Charge‐Trap Memory Based on a MoS2 Channel for Neuromorphic Engineering
M Farronato, P Mannocci, M Melegari, S Ricci, CM Compagnoni, D Ielmini
Advanced Materials 35 (37), 2205381, 2023
272023
Memtransistor Devices Based on MoS2 Multilayers with Volatile Switching due to Ag Cation Migration
M Farronato, M Melegari, S Ricci, S Hashemkhani, A Bricalli, D Ielmini
Advanced Electronic Materials 8 (8), 2101161, 2022
242022
Changing the Electronic Polarizability of Monolayer MoS2 by Perylene‐Based Seeding Promoters
C Martella, E Kozma, PP Tummala, S Ricci, KA Patel, ...
Advanced Materials Interfaces 7 (20), 2000791, 2020
172020
Forming‐Free Resistive Switching Memory Crosspoint Arrays for In‐Memory Machine Learning
S Ricci, P Mannocci, M Farronato, S Hashemkhani, D Ielmini
Advanced Intelligent Systems 4 (8), 2200053, 2022
132022
A CMOS–memristor hybrid system for implementing stochastic binary spike timing-dependent plasticity
J Ahmadi-Farsani, S Ricci, S Hashemkhani, D Ielmini, B Linares-Barranco, ...
Philosophical Transactions of the Royal Society A 380 (2228), 20210018, 2022
112022
Low-current, highly linear synaptic memory device based on MoS2 transistors for online training and inference
M Farronato, M Melegari, S Ricci, S Hashemkani, CM Compagnoni, ...
2022 IEEE 4th International Conference on Artificial Intelligence Circuits …, 2022
52022
Decision Making by a Neuromorphic Network of Volatile Resistive Switching Memories
S Ricci, D Kappel, C Tetzlaff, D Ielmini, E Covi
2022 29th IEEE International Conference on Electronics, Circuits and Systems …, 2022
32022
Thermal-Induced Multi-State Memristors for Neuromorphic Engineering
R Li, S Shreya, S Ricci, D Bridarolli, D Ielmini, H Farkhani, F Moradi
2023 IEEE International Symposium on Circuits and Systems (ISCAS), 1-5, 2023
22023
Programming characteristics of electrochemical random access memory (ECRAM)—Part I: Experimental study
M Porzani, S Ricci, M Farronato, D Ielmini
IEEE Transactions on Electron Devices, 2024
12024
Programming Characteristics of Electrochemical Random Access Memory (ECRAM)—Part II: Physics-Based Modeling
M Porzani, F Carletti, S Ricci, M Farronato, D Ielmini
IEEE Transactions on Electron Devices, 2024
12024
Tunable synaptic working memory with volatile memristive devices
S Ricci, D Kappel, C Tetzlaff, D Ielmini, E Covi
Neuromorphic Computing and Engineering 3 (4), 044004, 2023
12023
In-Memory Computing with Crosspoint Resistive Memory Arrays for Machine Learning
S Ricci, P Mannocci, M Farronato, D Ielmini
Annual Meeting of the Italian Electronics Society, 35-40, 2022
12022
A hybrid memristor/cmos snn for implementing one-shot winner-takes-all training
J Ahmadi-Farsani, S Ricci, S Hashemkhani, D Ielmini, B Linares-Barranco, ...
2022 IEEE International Symposium on Circuits and Systems (ISCAS), 210-214, 2022
12022
Memristive tonotopic mapping with volatile resistive switching memory devices
A Milozzi, S Ricci, D Ielmini
Nature Communications 15 (1), 2812, 2024
2024
Development of Crosspoint Memory Arrays for Neuromorphic Computing
S Ricci, P Mannocci, M Farronato, A Milozzi, D Ielmini
Special Topics in Information Technology, 65-74, 2024
2024
Compact modeling of resistive switching memory (RRAM) with voltage and temperature dependences
A Glukhov, D Bridarolli, S Ricci, R Li, S Shreya, H Farkhani, F Moradi, ...
2023 IEEE Nanotechnology Materials and Devices Conference (NMDC), 793-797, 2023
2023
Memtransistor devices based on MoS2 for neuromorphic computing
M Farronato, P Mannocci, S Ricci, A Bricalli, M Melegari, ...
Proceedings of Neuromorphic Materials, Devices, Circuits and Systems …, 2023
2023
Memtransistor Devices Based on MoS2 Multilayers with Volatile Switching due to Ag Cation Migration (Adv. Electron. Mater. 8/2022).
M Farronato, M Melegari, S Ricci, S Hashemkhani, A Bricalli, D Ielmini
Advanced Electronic Materials 8 (8), 2022
2022
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